4 Revision History
Changes from A Revision (July 2016) to B Revision
- Changed front-page diagramGo
- Changed REFBUFOUT pin description from "Reference buffer output, ADC reference input" to "Internal reference buffer output, external reference input"Go
- Changed DVDD range in condition line of Electrical Characteristics from 2.35 V to 3.6 V to 1.65 V to 5.5 VGo
- Changed maximum value for DVDD range in specifications tables from 3.6 V to 5.5 VGo
- Added TA = 25°C to reference buffer offset voltage test condition in Electrical Characteristics tableGo
- Changed input offset thermal drift typ value from 10 to 1Go
- Added 100-kHz condition to SNR and THD parameters in the Electrical CharacteristicsGo
- Added fIN = 2 kHz test condition to SFDR in Electrical Characteristics table Go
- Added new conditions to serial clock frequency in the Timing Requirements tableGo
- Added serial clock frequency conditions in Timing Characteristics table Go
- Added strobe output time to Switching Characteristics tableGo
- Added Figure 26, Noise Performance vs Input FrequencyGo
- Added Figure 27, Distortion Performance vs Input FrequencyGo
- Added descriptive text and one figure to the Reference Buffer Module sectionGo
- Changed td_RVS to td_CSRDY in step 3 of Data Transfer Frame section Go
- Deleted text from first note element regarding data transfer activity in zone 2Go
- Added new note (1) for SCLK in Table 9 Go
- Changed Data Acquisition (DAQ) Circuit for Lowest Distortion and Noise Performance... section for clarityGo
- Added more design parameters to Design Parameters tableGo
- Changed Detailed Design Procedure section for clarityGo
- Added two new application curvesGo
- Added new typical application subsection Go
- Added text to Power-Supply Recommendations section for clarity Go
Changes from * Revision (June 2016) to A Revision
- Changed from product preview to production data Go
- Changed DVDD specified throughput value in the Recommended Operating Conditions from 3.6 V to 5.5 VGo