SLLS114M January   1979  – March 2024 AM26LS31 , AM26LS31M

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics – AM26LS31
    7. 5.7 Switching Characteristics – AM26LS31M
    8. 5.8 Typical Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Complementary Output-Enable Inputs
      2. 7.3.2 High Output Impedance in Power-Off Conditions
      3. 7.3.3 Complementary Outputs
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.4 Thermal Information

THERMAL METRIC(1)AM26LS31xUNIT
D (SOIC)DB (SSOP)N (PDIP)NS (SO)
16 PINS16 PINS16 PINS16 PINS
RθJAJunction-to-ambient thermal resistance(2)84.68260.688.5°C/W
RθJC(top)Junction-to-case (top) thermal resistance43.5–48.146.2°C/W
RθJBJunction-to-board thermal resistance43.2–40.650.7°C/W
ψJTJunction-to-top characterization parameter10.4–27.513.5°C/W
ψJBJunction-to-board characterization parameter42.8–40.350.3°C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.
(2) The package thermal impedance is calculated in accordance with JESD 51-7.