10 Revision History
Changes from December 16, 2023 to December 7, 2024 (from Revision (December 2023) to Revision A (December 2024))
-
Global: Updated the introductory sentence in several timing
sections.Go
- (Features): Increased LPDDR4 speed to 3733MT/sGo
- (Device Comparison): Changed each of the
WKUP_CTRL_MMR_CFG0_JTAG_USER_ID[31:13] register valuesGo
- (Device Comparison): Changed the register name in table note
1Go
- (Pin Attributes - All DDR signal pins): Removed 1.2V from the IO OPERATING VOLTAGE column.Go
- (Signal Descriptions): Added a new paragraph that references the Pad
Configuration Registers section in Device Configuration chapter of the device
TRMGo
- (EPWM0 Signal Descriptions): Updated the EHRPWM0_SYNCO descriptionGo
- (Power Supply Signal Descriptions): Updated the description of several power rails to clarify their functionGo
- (Power Supply Signal Descriptions): Updated the table notes associated with the CAP_VDDSx pins to clarify the need for capacitance derating and describe additional connectivity options Go
- (Pin Connectivity Requirements): Updated the connectivity
requirements description for MCU_I2C0 and WKUP_I2C0 balls to allow connecting
external pull-down resistors when selecting a GPIO signal
functionGo
- (Absolute Maximum Ratings): Updated the description of several power rails
to clarify their functionGo
- (Recommended Operating Conditions): Updated the description of several power
rails to clarify their functionGo
- (Recommended Operating Conditions): Updated the note associated with the
VDD_MMC0 and VDD_DLL_MMC0 power railsGo
- (Device Speed Grades) Added T and V speed gradesGo
- (I2C Open-Drain, and Fail-Safe Electrical Characteristics) Added a table
note to the Input Leakage Current parameterGo
- (I2C Open-Drain, and Fail-Safe Electrical Characteristics) Separated the
Input Leakage Current Test Conditions into two rowsGo
- (Fail-Safe Reset Electrical Characteristics) Added a table note to the Input
Leakage Current parameterGo
- (Fail-Safe Reset Electrical Characteristics) Separated the Input Leakage
Current Test Conditions into two rowsGo
- (High-Frequency Oscillator Electrical Characteristics) Added a table
note to the Input Leakage Current parameterGo
- (High-Frequency Oscillator Electrical Characteristics) Separated the
Input Leakage Current Test Conditions into two rowsGo
- (Low-Frequency Oscillator Electrical Characteristics) Added a table
note to the Input Leakage Current parameterGo
- (Low-Frequency Oscillator Electrical Characteristics) Separated the
Input Leakage Current Test Conditions into two rowsGo
- (eMMCPHY Electrical Characteristics) Added a table note to the Input
Leakage Current parameterGo
- (eMMCPHY Electrical Characteristics) Separated the Input Leakage
Current Test Conditions into two rowsGo
- (SDIO Electrical Characteristics) Added a table note to the Input
Leakage Current parameterGo
- (SDIO Electrical Characteristics) Separated the Input Leakage
Current Test Conditions into two rowsGo
- (SDIO Electrical Characteristics): Changed VDDSHV5 power rail name
used to define the
VIL/VILSS/VIH/VIHSS/VOL/VOH
parameter values by referencing a generic power rail name (VDD), where
applicable, and added an associated table noteGo
- (LVCMOS Electrical Characteristics) Added a table note to the Input Leakage
Current parameterGo
- (LVCMOS Electrical Characteristics) Separated the Input Leakage Current Test
Conditions into two rowsGo
- (Recommended Operating Conditions for OTP eFuse Programming): Changed the
"VPP Slew Rate" parameter name to "VPP Power-up Slew Rate" to clarify the limit associated
with this parameter only applies during power-upGo
- (Temperature Sensor Characteristics): Added new section to define
Voltage and Temperature Module (VTM) on die temperature sensor
characteristicsGo
- (Power-Up Sequencing): Added note to clarify power rails must decay
below 300mv before initiating a new power-up sequenceGo
- (Power-Up Sequencing – Supply / Signal Assignments): Added missing
power rails, VDDA_PLL3, VDDA_PLL4, and VDDA_TEMP2Go
- (Power-Down Sequencing): Added note to clarify power rails must
decay below 300mv before initiating a new power-up sequenceGo
- (Power-Down Sequencing – Supply / Signal Assignments): Added missing
power rails, VDDA_PLL3, VDDA_PLL4, and VDDA_TEMP2Go
- (Power-Down Sequencing): Updated the Power-Down Sequence diagram to
account for a use case where the system power remains turned on while the device
power management solution is turned off. Also included an option that allows the
ramp-down of IO power rails to be extended until the last core power rail ramps
down and it is possible for MCU_PORz to be asserted before the supplies begin to
sequence offGo
- (BOOTMODE Timing Requirements): Updated the description for
parameters RST23 and RST24Go
- (Input Clocks / Oscillators): Added
VOUT0_EXTPCLKINGo
- (MCU_OSC0 Switching Characteristics - Crystal Mode): Updated maximum XI, XO,
and XI to XO capacitance valuesGo
- (MCU_OSC0 LVCMOS Digital Clock Source): Added additional notes and the new
MCU_OSC0 LVCMOS Digital Clock Source Requirements tableGo
- (WKUP_LFOSC0 Crystal Electrical Characteristics) Included a new
parameter that defines the maximum Crystal Frequency Stability and
Tolerance.Go
- (PLLs): Updated the PLL names to include the number references used in the TRMGo
- (CPSW3G RMII Timing Conditions): Changed the maximum input slew rate for
both operating voltagesGo
- (CPSW3G RGMII Timing Conditions): Added operating voltage conditions
to the Input Slew Rate parameter to allow a relaxed slew rate when operating at
1.8VGo
- (DDRSS Switching Characteristics): Changed the DDR clock min cycle
time to reflect the increased LPDDR4 speed of 3733MT/sGo
- (I2C): Changed the maximum slew rate value from 0.8V/ns to 0.08V/ns
and added "when operating at 3.3V" to clarify the exception is not applicable to
1.8V operationGo
- (MMC0 Timing Requirements – HS400 Mode): Changed the minimum pulse
width for MMC0_DS from 2.0 to 1.95Go
- (MMC0 Timing Requirements – HS400 Mode): Changed the maximum values
associated with parameters HS4001, HS4002, HS4003, and HS4004 from 500 to
475Go
- (MMC0 Switching Characteristics – HS400 Mode): Replaced the Delay
time parameters HS4008 and HS4009 with Output setup and Output hold parameters
HS4008, HS4009, HS40010, and HS40011Go
- (eMMC in – HS400 Mode – Transmitter Mode): Updated the timing
diagram to match the new definitions associated with parameters HS4008, HS4009,
HS40010, and HS40011Go
- (OSPI Switching Characteristics – PHY Data Training): Corrected the
formulas associated with timing parameters O5 and O11Go
- (OSPI0 Switching Characteristics – PHY SDR Mode): Corrected the
formulas associated with timing parameters O10 and O11Go
- (OSPI0 DLL Delay Mapping for PHY DDR Timing Modes): Changed the
delay valuesGo
- (OSPI0 Switching Characteristics – PHY DDR Mode): Corrected the
formulas associated with timing parameters O4 and O5Go
- (DDR Board Design and Layout Guidelines): Updated
the title used in the LPDDR4 Board Design and Layout
Guidelines linkGo
- (Standard Package Symbolization): Updated image to match updates applied to the Nomenclature Description table in the Device Naming Convention sectionGo
- (Device Naming Convention): Updated the Nomenclature
Description table in the Device Naming Convention section to include
device revision B (SR1.1) and additional speed gradesGo