SBASAD0A March 2022 – July 2022 AMC23C10
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
ANALOG INPUT | ||||||
RIN | Input resistance | INP, INN pin, 0 ≤ VIN ≤ 4 V | 1 | GΩ | ||
IBIAS | Input bias current | INP pin, 0 ≤ VIN ≤ 4 V(4) | 0.1 | 25 | nA | |
INP pin, –400 mV ≤ VIN ≤ 0 V(5) | –310 | –0.5 | ||||
INP pin, –1V ≤ VIN < –400 mV(4) | –80 | –40 | –10 | µA | ||
INN pin, 0 ≤ VIN ≤ 4 V(2) | 0.5 | 12 | nA | |||
CIN | Input capacitance | INP, INN pin | 4 | pF | ||
COMPARATOR | ||||||
VIT+ | Positive-going trip threshold | VINN + VHYS / 2 | mV | |||
VIT– | Negative-going trip threshold | VINN –VHYS / 2 | mV | |||
Trip threshold error | (VIT+ – VINN – VHYS / 2), VHYS = 25 mV, INN = GND1, VINP rising |
–6 | 6 | mV | ||
(VIT– – VINN + VHYS / 2), VHYS = 25 mV, INN = GND1, VINP falling |
–6 | 6 | ||||
VHYS | Trip threshold hysteresis | (VIT+ – VIT–) | 25 | mV | ||
DIGITAL OUTPUTS | ||||||
VOL | Low-level output voltage | ISINK = 4 mA | 80 | 250 | mV | |
VOH | High-level output voltage | ISOURCE = 4mA (push-pull output only) | VDD2 – 175 mV | VDD2 | V | |
ILKG | Open-drain output leakage current | VDD2 = 5 V, VOUT = 5 V | 5 | 100 | nA | |
CMTI | Common-mode transient immunity | |VINP – VINN| ≥ 25 mV, push-pull output | 100 | 150 | V/ns | |
|VINP – VINN| ≥ 25 mV, open-drain output, RPULLUP = 10 kΩ | 75 | 150 | ||||
POWER SUPPLY | ||||||
VDD1UV | VDD1 undervoltage detection threshold | VDD1 rising | 3 | V | ||
VDD1 falling | 2.9 | |||||
VDD1POR | VDD1 power-on reset threshold | VDD1 falling | 2.3 | V | ||
VDD2UV | VDD2 undervoltage detection threshold | VDD2 rising | 2.7 | V | ||
VDD2 falling | 2.1 | |||||
IDD1 | High-side supply current | 2.6 | 3.6 | mA | ||
IDD2 | Low-side supply current | 1.8 | 2.2 | mA |