SBASAC9B February 2022 – December 2024 AMC23C11
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
ANALOG INPUT | ||||||
RIN | Input resistance | IN pin, 0 ≤ VIN ≤ 4 V | 1 | GΩ | ||
IBIAS | Input bias current | IN pin, 0 ≤ VIN ≤ 4 V(3) | 0.1 | 25 | nA | |
IN pin, –400 mV ≤ VIN ≤ 0 V(4) | –310 | –0.5 | ||||
CIN | Input capacitance | IN pin | 4 | pF | ||
REFERENCE PIN | ||||||
IREF | Reference current | REF to GND1, 20 mV < VREF ≤ 2.7 V | 99 | 100 | 101 | μA |
VMSEL | Mode selection threshold | VREF rising | 500 | 550 | 600 | mV |
VREF falling | 450 | 500 | 550 | |||
Mode selection threshold hysteresis | 50 | mV | ||||
COMPARATOR | ||||||
VIT+ | Positive-going trip threshold | VREF + VHYS | mV | |||
EIT+ | Positive-going trip threshold error | (VIT+ – VREF – VHYS), VREF = 20 mV, VHYS = 4 mV |
–2 | 2 | mV | |
(VIT+ – VREF – VHYS), VREF = 250 mV, VHYS = 4 mV |
–2 | 2 | ||||
(VIT+ – VREF – VHYS), VREF = 2 V, VHYS = 25 mV |
–5 | 5 | ||||
VIT– | Negative-going trip threshold | VREF | mV | |||
EIT– | Negative-going trip threshold error | (VIT– – VREF), VREF = 20 mV | –2.5 | 2.5 | mV |
|
(VIT– – VREF), VREF = 250 mV | –2.5 | 2.5 | ||||
(VIT– – VREF), VREF = 2 V | –5 | 5 | ||||
VHYS | Trip threshold hysteresis | (VIT+ – VIT–), VREF ≤ 450 mV | 4 | mV | ||
(VIT+ – VIT–), VREF ≥ 600 mV | 25 | |||||
DIGITAL I/O | ||||||
VIH | High-level input voltage | LATCH pin | 0.7 x VDD2 | VDD2 + 0.3 | V | |
VIL | Low-level input voltage | LATCH pin | –0.3 | 0.3 x VDD2 | V | |
CIN | Input capacitance | LATCH pin | 4 | pF | ||
VOL | Low-level output voltage | ISINK = 4 mA | 80 | 250 | mV | |
ILKG | Open-drain output leakage current | VDD2 = 5 V, VOUT = 5 V | 5 | 100 | nA | |
CMTI | Common-mode transient immunity | |VIN – VREF| ≥ 4 mV, RPULLUP = 10 kΩ | 75 | 150 | V/ns | |
POWER SUPPLY | ||||||
VDD1UV | VDD1 undervoltage detection threshold | VDD1 rising | 3 | V | ||
VDD1 falling | 2.9 | |||||
VDD1POR | VDD1 power-on reset threshold | VDD1 falling | 2.3 | V | ||
VDD2UV | VDD2 undervoltage detection threshold | VDD2 rising | 2.7 | V | ||
VDD2 falling | 2.1 | |||||
IDD1 | High-side supply current | 2.7 | 3.7 | mA | ||
IDD2 | Low-side supply current | 1.8 | 2.2 | mA |