SLUSE64 May   2021 BQ25723

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Description (continued)
  6. 6 Device Comparison Table
  7. 7 Pin Configuration and Functions
  8. 8 Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 Timing Requirements
    7. 8.7 Typical Characteristics
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  Power-Up Sequence
      2. 9.3.2  Vmin Active Protection (VAP) with Battery only
      3. 9.3.3  Two-Level Battery Discharge Current Limit
      4. 9.3.4  Fast Role Swap Feature
      5. 9.3.5  CHRG_OK Indicator
      6. 9.3.6  Input and Charge Current Sensing
      7. 9.3.7  Input Voltage and Current Limit Setup
      8. 9.3.8  Battery Cell Configuration
      9. 9.3.9  Device HIZ State
      10. 9.3.10 USB On-The-Go (OTG)
      11. 9.3.11 Converter Operation
      12. 9.3.12 Inductance Detection Through IADPT Pin
      13. 9.3.13 Converter Compensation
      14. 9.3.14 Continuous Conduction Mode (CCM)
      15. 9.3.15 Pulse Frequency Modulation (PFM)
      16. 9.3.16 Switching Frequency and Dithering Feature
      17. 9.3.17 Current and Power Monitor
        1. 9.3.17.1 High-Accuracy Current Sense Amplifier (IADPT and IBAT)
        2. 9.3.17.2 High-Accuracy Power Sense Amplifier (PSYS)
      18. 9.3.18 Input Source Dynamic Power Management
      19. 9.3.19 Input Current Optimizer (ICO)
      20. 9.3.20 Two-Level Adapter Current Limit (Peak Power Mode)
      21. 9.3.21 Processor Hot Indication
        1. 9.3.21.1 PROCHOT During Low Power Mode
        2. 9.3.21.2 PROCHOT Status
      22. 9.3.22 Device Protection
        1. 9.3.22.1 Watchdog Timer
        2. 9.3.22.2 Input Overvoltage Protection (ACOV)
        3. 9.3.22.3 Input Overcurrent Protection (ACOC)
        4. 9.3.22.4 System Overvoltage Protection (SYSOVP)
        5. 9.3.22.5 Battery Overvoltage Protection (BATOVP)
        6. 9.3.22.6 Battery Discharge Overcurrent Protection (BATOC)
        7. 9.3.22.7 Battery Short Protection (BATSP)
        8. 9.3.22.8 System Undervoltage Lockout (VSYS_UVP) and Hiccup Mode
        9. 9.3.22.9 Thermal Shutdown (TSHUT)
    4. 9.4 Device Functional Modes
      1. 9.4.1 Forward Mode
        1. 9.4.1.1 System Voltage Regulation with Narrow VDC Architecture
        2. 9.4.1.2 Battery Charging
      2. 9.4.2 USB On-The-Go
      3. 9.4.3 Pass Through Mode (PTM)-Patented Technology
    5. 9.5 Programming
      1. 9.5.1 I2C Serial Interface
        1. 9.5.1.1 Timing Diagrams
        2. 9.5.1.2 Data Validity
        3. 9.5.1.3 START and STOP Conditions
        4. 9.5.1.4 Byte Format
        5. 9.5.1.5 Acknowledge (ACK) and Not Acknowledge (NACK)
        6. 9.5.1.6 Target Address and Data Direction Bit
        7. 9.5.1.7 Single Read and Write
        8. 9.5.1.8 Multi-Read and Multi-Write
        9. 9.5.1.9 Write 2-Byte I2C Commands
    6. 9.6 Register Map
      1. 9.6.1  ChargeOption0 Register (I2C address = 01/00h) [reset = E70Eh]
      2. 9.6.2  ChargeCurrent Register (I2C address = 03/02h) [reset = 0000h]
        1. 9.6.2.1 Battery Pre-Charge Current Clamp
      3. 9.6.3  ChargeVoltage Register (I2C address = 05/04h) [reset value based on CELL_BATPRESZ pin setting]
      4. 9.6.4  ChargerStatus Register (I2C address = 21/20h) [reset = 0000h]
      5. 9.6.5  ProchotStatus Register (I2C address = 23/22h) [reset = B800h]
      6. 9.6.6  IIN_DPM Register (I2C address = 25/24h) [reset = 4100h]
      7. 9.6.7  ADCVBUS/PSYS Register (I2C address = 27/26h)
      8. 9.6.8  ADCIBAT Register (I2C address = 29/28h)
      9. 9.6.9  ADCIIN/CMPIN Register (I2C address = 2B/2Ah)
      10. 9.6.10 ADCVSYS/VBAT Register (I2C address = 2D/2Ch)
      11. 9.6.11 ChargeOption1 Register (I2C address = 31/30h) [reset = 3300h]
      12. 9.6.12 ChargeOption2 Register (I2C address = 33/32h) [reset = 00B7]
      13. 9.6.13 ChargeOption3 Register (I2C address = 35/34h) [reset = 0434h]
      14. 9.6.14 ProchotOption0 Register (I2C address = 37/36h) [reset = 4A81h(2S~4s) 4A09(1S)]
      15. 9.6.15 ProchotOption1 Register (I2C address = 39/38h) [reset = 41A0h]
      16. 9.6.16 ADCOption Register (I2C address = 3B/3Ah) [reset = 2000h]
      17. 9.6.17 ChargeOption4 Register (I2C address = 3D/3Ch) [reset = 0048h]
      18. 9.6.18 Vmin Active Protection Register (I2C address = 3F/3Eh) [reset = 006Ch(2s~4s)/0004h(1S)]
      19. 9.6.19 OTGVoltage Register (I2C address = 07/06h) [reset = 09C4h]
      20. 9.6.20 OTGCurrent Register (I2C address = 09/08h) [reset = 3C00h]
      21. 9.6.21 InputVoltage(VINDPM) Register (I2C address = 0B/0Ah) [reset =VBUS-1.28V]
      22. 9.6.22 VSYS_MIN Register (I2C address = 0D/0Ch) [reset value based on CELL_BATPRESZ pin setting]
      23. 9.6.23 IIN_HOST Register (I2C address = 0F/0Eh) [reset = 4100h]
      24. 9.6.24 ID Registers
        1. 9.6.24.1 ManufactureID Register (I2C address = 2Eh) [reset = 40h]
        2. 9.6.24.2 Device ID (DeviceAddress) Register (I2C address = 2Fh) [reset = E0h]
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 ACP-ACN Input Filter
        2. 10.2.2.2 Inductor Selection
        3. 10.2.2.3 Input Capacitor
        4. 10.2.2.4 Output Capacitor
        5. 10.2.2.5 Power MOSFETs Selection
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
      1. 12.2.1 Layout Example Reference Top View
      2. 12.2.2 Inner Layer Layout and Routing Example
  13. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 Third-Party Products Disclaimer
    2. 13.2 Documentation Support
      1. 13.2.1 Related Documentation
    3. 13.3 Receiving Notification of Documentation Updates
    4. 13.4 Support Resources
    5. 13.5 Trademarks
    6. 13.6 Electrostatic Discharge Caution
    7. 13.7 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

9.3.6 Input and Charge Current Sensing

The charger supports 10 mΩ and 5 mΩ for both input current sensing and charge current sensing. By default, 10 mΩ is enabled by POR setting RSNS_RAC=0b and RSNS_RSR=0b, if 5 mΩ sensing is used please configure RSNS_RAC=1b and RSNS_RSR=1b. Lower current sensing resistor can help improve overall charge efficiency especially under heavy load. At same time PSYS,IADPT,IBAT pin accuracy and IINDPM/ICHG/IOTG regulation accuracy get worse due to effective signal reduction in comparison to error signal components.

When RSNS_RAC=RSNS_RSR=0b and 10 mΩ is used for both input and charge current sensing, the pre-charge current clamp is 384 mA (2 A for 1S if VSYS_MIN>VBAT>3 V ), the maximum IIN_HOST setting is clamped at 6.35 A, and the maximum charge current is clamped at 8.128 A.

When RSNS_RAC=RSNS_RSR=1b and 5 mΩ is used for both input and charge current sensing, the charger will internally compensate pre-charge current clamp to be 384 mA (2 A for 1S if VSYS_MIN>VBAT>3 V ) under 5-mΩ current sensing which keeps consistent between 10 mΩ and 5 mΩ. Under 5-mΩ current sensing application charge current range is doubled to 16.256 A. Based on EN_FAST_5MOHM register bit status and IADPT pin resistor the maximum input current can be configured referring to Table 9-1:

For defined current sense resistors (10 mΩ/5 mΩ), PSYS function is still valid when unsymmetrical input current sense and charge current sense resistors are used. But RSNS_RAC and RSNS_RSR bit status have to be consistent with practical resistors used in the system.

Table 9-1 Maximum Input Current Limit Configuration Table
INDUCTANCE (IADPT Pin Resistance) EN_FAST_5MOHM RSR_RAC BIT MAXIMUM INPUT CURRENT LIMIT (IINDPM)

1.0 uH(90.9 kΩ)

1.5 uH(121 kΩ)

2.2 uH(137 kΩ)

 Xb RSNS_RAC=0b 6.35 A
1b RSNS_RAC=1b 6.35 A
0b RSNS_RAC=1b 10 A
3.3 uH(169 kΩ) Xb RSNS_RAC=0b 6.35 A
Xb RSNS_RAC=1b 10 A