SLUSE64
May 2021
BQ25723
PRODUCTION DATA
1
Features
2
Applications
3
Description
4
Revision History
5
Description (continued)
6
Device Comparison Table
7
Pin Configuration and Functions
8
Specifications
8.1
Absolute Maximum Ratings
8.2
ESD Ratings
8.3
Recommended Operating Conditions
8.4
Thermal Information
8.5
Electrical Characteristics
8.6
Timing Requirements
8.7
Typical Characteristics
9
Detailed Description
9.1
Overview
9.2
Functional Block Diagram
9.3
Feature Description
9.3.1
Power-Up Sequence
9.3.2
Vmin Active Protection (VAP) with Battery only
9.3.3
Two-Level Battery Discharge Current Limit
9.3.4
Fast Role Swap Feature
9.3.5
CHRG_OK Indicator
9.3.6
Input and Charge Current Sensing
9.3.7
Input Voltage and Current Limit Setup
9.3.8
Battery Cell Configuration
9.3.9
Device HIZ State
9.3.10
USB On-The-Go (OTG)
9.3.11
Converter Operation
9.3.12
Inductance Detection Through IADPT Pin
9.3.13
Converter Compensation
9.3.14
Continuous Conduction Mode (CCM)
9.3.15
Pulse Frequency Modulation (PFM)
9.3.16
Switching Frequency and Dithering Feature
9.3.17
Current and Power Monitor
9.3.17.1
High-Accuracy Current Sense Amplifier (IADPT and IBAT)
9.3.17.2
High-Accuracy Power Sense Amplifier (PSYS)
9.3.18
Input Source Dynamic Power Management
9.3.19
Input Current Optimizer (ICO)
9.3.20
Two-Level Adapter Current Limit (Peak Power Mode)
9.3.21
Processor Hot Indication
9.3.21.1
PROCHOT During Low Power Mode
9.3.21.2
PROCHOT Status
9.3.22
Device Protection
9.3.22.1
Watchdog Timer
9.3.22.2
Input Overvoltage Protection (ACOV)
9.3.22.3
Input Overcurrent Protection (ACOC)
9.3.22.4
System Overvoltage Protection (SYSOVP)
9.3.22.5
Battery Overvoltage Protection (BATOVP)
9.3.22.6
Battery Discharge Overcurrent Protection (BATOC)
9.3.22.7
Battery Short Protection (BATSP)
9.3.22.8
System Undervoltage Lockout (VSYS_UVP) and Hiccup Mode
9.3.22.9
Thermal Shutdown (TSHUT)
9.4
Device Functional Modes
9.4.1
Forward Mode
9.4.1.1
System Voltage Regulation with Narrow VDC Architecture
9.4.1.2
Battery Charging
9.4.2
USB On-The-Go
9.4.3
Pass Through Mode (PTM)-Patented Technology
9.5
Programming
9.5.1
I2C Serial Interface
9.5.1.1
Timing Diagrams
9.5.1.2
Data Validity
9.5.1.3
START and STOP Conditions
9.5.1.4
Byte Format
9.5.1.5
Acknowledge (ACK) and Not Acknowledge (NACK)
9.5.1.6
Target Address and Data Direction Bit
9.5.1.7
Single Read and Write
9.5.1.8
Multi-Read and Multi-Write
9.5.1.9
Write 2-Byte I2C Commands
9.6
Register Map
9.6.1
ChargeOption0 Register (I2C address = 01/00h) [reset = E70Eh]
9.6.2
ChargeCurrent Register (I2C address = 03/02h) [reset = 0000h]
9.6.2.1
Battery Pre-Charge Current Clamp
9.6.3
ChargeVoltage Register (I2C address = 05/04h) [reset value based on CELL_BATPRESZ pin setting]
9.6.4
ChargerStatus Register (I2C address = 21/20h) [reset = 0000h]
9.6.5
ProchotStatus Register (I2C address = 23/22h) [reset = B800h]
9.6.6
IIN_DPM Register (I2C address = 25/24h) [reset = 4100h]
9.6.7
ADCVBUS/PSYS Register (I2C address = 27/26h)
9.6.8
ADCIBAT Register (I2C address = 29/28h)
9.6.9
ADCIIN/CMPIN Register (I2C address = 2B/2Ah)
9.6.10
ADCVSYS/VBAT Register (I2C address = 2D/2Ch)
9.6.11
ChargeOption1 Register (I2C address = 31/30h) [reset = 3300h]
9.6.12
ChargeOption2 Register (I2C address = 33/32h) [reset = 00B7]
9.6.13
ChargeOption3 Register (I2C address = 35/34h) [reset = 0434h]
9.6.14
ProchotOption0 Register (I2C address = 37/36h) [reset = 4A81h(2S~4s) 4A09(1S)]
9.6.15
ProchotOption1 Register (I2C address = 39/38h) [reset = 41A0h]
9.6.16
ADCOption Register (I2C address = 3B/3Ah) [reset = 2000h]
9.6.17
ChargeOption4 Register (I2C address = 3D/3Ch) [reset = 0048h]
9.6.18
Vmin Active Protection Register (I2C address = 3F/3Eh) [reset = 006Ch(2s~4s)/0004h(1S)]
9.6.19
OTGVoltage Register (I2C address = 07/06h) [reset = 09C4h]
9.6.20
OTGCurrent Register (I2C address = 09/08h) [reset = 3C00h]
9.6.21
InputVoltage(VINDPM) Register (I2C address = 0B/0Ah) [reset =VBUS-1.28V]
9.6.22
VSYS_MIN Register (I2C address = 0D/0Ch) [reset value based on CELL_BATPRESZ pin setting]
9.6.23
IIN_HOST Register (I2C address = 0F/0Eh) [reset = 4100h]
9.6.24
ID Registers
9.6.24.1
ManufactureID Register (I2C address = 2Eh) [reset = 40h]
9.6.24.2
Device ID (DeviceAddress) Register (I2C address = 2Fh) [reset = E0h]
10
Application and Implementation
10.1
Application Information
10.2
Typical Application
10.2.1
Design Requirements
10.2.2
Detailed Design Procedure
10.2.2.1
ACP-ACN Input Filter
10.2.2.2
Inductor Selection
10.2.2.3
Input Capacitor
10.2.2.4
Output Capacitor
10.2.2.5
Power MOSFETs Selection
10.2.3
Application Curves
11
Power Supply Recommendations
12
Layout
12.1
Layout Guidelines
12.2
Layout Example
12.2.1
Layout Example Reference Top View
12.2.2
Inner Layer Layout and Routing Example
13
Device and Documentation Support
13.1
Device Support
13.1.1
Third-Party Products Disclaimer
13.2
Documentation Support
13.2.1
Related Documentation
13.3
Receiving Notification of Documentation Updates
13.4
Support Resources
13.5
Trademarks
13.6
Electrostatic Discharge Caution
13.7
Glossary
14
Mechanical, Packaging, and Orderable Information
Package Options
Mechanical Data (Package|Pins)
RSN|32
MPQF194B
Thermal pad, mechanical data (Package|Pins)
RSN|32
QFND189E
Orderable Information
sluse64_oa
sluse64_pm
8.2
ESD Ratings
VALUE
UNIT
V
(ESD)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins
(1)
±2000
V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins
(2)
±500
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.