CC1175 High-Performance RF Transmitter for Narrowband Systems
- SWRS116F August 2011 – October 2014 CC1175
  
  PRODUCTION DATA.

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DATA SHEET

CC1175 High-Performance RF Transmitter for Narrowband Systems

1 Device Overview

1.1 Features

High-Performance, Single-Chip Transmitter
- Very Low Phase Noise: –111 dBc/Hz at
  10-kHz Offset
High Spectral Efficiency (9.6 kbps in 12.5-kHz Channel in Compliance With FCC Narrowbanding Mandate)
128-Byte TX FIFO
Support for Seamless Integration With the CC1190 Device for Increased Range Giving up to +27-dBm Output Power
Programmable Output Power up to +16 dBm With 0.4-dB Step Size
Power Supply
- Wide Supply Voltage Range (2.0 V to 3.6 V)
- Low Current Consumption:
  - TX: 45 mA at +14 dBm
- Power Down: 0.12 μA (0.5 μA With Timer Running)
Automatic Output Power Ramping
Configurable Data Rates: 0 to 200 kbps
Supported Modulation Formats: 2-FSK,
2-GFSK, 4-FSK, 4-GFSK, MSK, OOK
RoHS-Compliant 5-mm x 5-mm No-Lead QFN 32-Pin Package (RHB)
Regulations – Suitable for Systems Targeting Compliance With
- Europe: ETSI EN 300 220, ETSI EN 54-25
- US: FCC CFR47 Part 15, FCC CFR47 Part 90, 24, and 101
- Japan: ARIB RCR STD-T30, ARIB STD-T67, ARIB STD-T108
Peripherals and Support Functions
- TCXO Support and Control, also in Power Modes
- Optional Coding Gain Feature for Increased Range and Robustness
- Temperature Sensor

1.2 Applications

One-way Narrowband Ultra-Low Power Wireless Systems With Channel Spacing Down to 6.25 kHz
169-, 315-, 433-, 868-, 915-, 920-, 950-MHz ISM/SRD Band Systems
Wireless Metering and Wireless Smart Grid (AMR and AMI)
IEEE 802.15.4g Systems
Home and Building Automation
Wireless Alarm and Security Systems
Industrial Monitoring and Control
Wireless Healthcare Applications
Wireless Sensor Networks and Active RFID

1.3 Description

The CC1175 device is a fully integrated single-chip radio transmitter designed for high performance at very low-power and low-voltage operation in cost-effective wireless systems. All filters are integrated, thus removing the need for costly external SAW and IF filters. The device is mainly intended for the ISM (Industrial, Scientific, and Medical) and SRD (Short Range Device) frequency bands at 164–192 MHz, 274–320 MHz, 410–480 MHz, and 820–960 MHz.

The CC1175 device provides extensive hardware support for packet handling, data buffering, and burst transmissions. The main operating parameters of the CC1175 device can be controlled through an SPI interface. In a typical system, the CC1175 device will be used with a microcontroller and only a few external passive components.

Device Information⁽¹⁾

PART NUMBER	PACKAGE	BODY SIZE
CC1175RHB	VQFN (32)	5.00 mm x 5.00 mm

(1) For more information, see Section 8, Mechanical Packaging and Orderable Information

1.4 Functional Block Diagram

Figure 1-1 shows the system block diagram of the CC1175 device.

Figure 1-1 Functional Block Diagram

2 Revision History

This data manual revision history highlights the changes made to the SWRS116E device-specific data manual to make it an SWRS116F revision.

Changes from E Revision (June 2014) to F Revision

Added Ambient to the temperature range condition and removed Tj from Temperature range Go
Added data to TCXO tableGo

3 Terminal Configuration and Functions

3.1 Pin Diagram

Figure 3-1 shows pin names and locations for the CC1175 device.

Figure 3-1 Package 5-mm × 5-mm QFN

3.2 Pin Configuration

The following table lists the pin-out configuration for the CC1175 device.

PIN NO.	PIN NAME	TYPE / DIRECTION	DESCRIPTION
1	VDD_GUARD	Power	2.0–3.6 V VDD
2	RESET_N	Digital input	Asynchronous, active-low digital reset
3	GPIO3	Digital I/O	General-purpose I/O
4	GPIO2	Digital I/O	General-purpose I/O
5	DVDD	Power	2.0–3.6 VDD to internal digital regulator
6	DCPL	Power	Digital regulator output to external decoupling capacitor
7	SI	Digital input	Serial data in
8	SCLK	Digital input	Serial data clock
9	SO(GPIO1)	Digital I/O	Serial data out (general-purpose I/O)
10	GPIO0	Digital I/O	General-purpose I/O
11	CSn	Digital input	Active-low chip select
12	DVDD	Power	2.0–3.6 V VDD
13	AVDD_IF	Power	2.0–3.6 V VDD
14	RBIAS	Analog	External high-precision resistor
15	AVDD_RF	Power	2.0–3.6 V VDD
16	N.C.		Not connected
17	PA	Analog	Single-ended TX output (requires DC path to VDD)
18	N.C.		Not connected
19	GND1	Analog	Analog ground
20	GND0	Analog	Analog ground
21	DCPL_VCO	Power	Pin for external decoupling of VCO supply regulator
22	AVDD_SYNTH1	Power	2.0–3.6 V VDD
23	LPF0	Analog	External loop filter components
24	LPF1	Analog	External loop filter components
25	AVDD_PFD_CHP	Power	2.0–3.6 V VDD
26	DCPL_PFD_CHP	Power	Pin for external decoupling of PFD and CHP regulator
27	AVDD_SYNTH2	Power	2.0–3.6 V VDD
28	AVDD_XOSC	Power	2.0–3.6 V VDD
29	DCPL_XOSC	Power	Pin for external decoupling of XOSC supply regulator
30	XOSC_Q1	Analog	Crystal oscillator pin 1 (must be grounded if a TCXO or other external clock connected to EXT_XOSC is used)
31	XOSC_Q2	Analog	Crystal oscillator pin 2 (must be left floating if a TCXO or other external clock connected to EXT_XOSC is used)
32	EXT_XOSC	Digital input	Pin for external clock input (must be grounded if a regular crystal connected to XOSC_Q1 and XOSC_Q2 is used)
–	GND	Ground pad	The ground pad must be connected to a solid ground plane.

4 Specifications

All measurements performed on CC1120EM_868_915 rev.1.0.1, CC1120EM_955 rev.1.2.1, CC1120EM_420_470 rev.1.0.1, or CC1120EM_169 rev.1.2.

4.1 Absolute Maximum Ratings⁽¹⁾⁽²⁾

PARAMETER	MIN	MAX	UNIT	CONDITION
Supply voltage (VDD, AVDD_x)	–0.3	3.9	V	All supply pins must have the same voltage
Voltage on any digital pin	–0.3	VDD+0.3	V	max 3.9
Voltage on analog pins (including DCPL pins)	–0.3	2.0	V

(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under general characteristics is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) All voltage values are with respect to V_SS, unless otherwise noted.

4.2 Handling Ratings

				MIN	MAX	UNIT
T_stg	Storage temperature range			–40	125	°C
V_ESD	Electrostatic discharge (ESD) performance:	Human body model (HBM), per ANSI/ESDA/JEDEC JS001⁽¹⁾		–2	2	kV
V_ESD	Electrostatic discharge (ESD) performance:	Charged device model (CDM), per JESD22-C101⁽²⁾	All pins	–500	500	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V HBM allows safe manufacturing with a standard ESD control process.

4.3 Recommended Operating Conditions (General Characteristics)

PARAMETER	MIN	MAX	UNIT	CONDITION
Voltage supply range	2.0	3.6	V	All supply pins must have the same voltage
Voltage on digital inputs	0	VDD	V
Temperature range	–40	85	°C	Ambient

4.4 Thermal Resistance Characteristics for RHB Package

		°C/W⁽¹⁾
Rθ_JC	Junction-to-case (top)	21.1
Rθ_JB	Junction-to-board	5.3
Rθ_JA	Junction-to-free air	31.3
Psi_JT	Junction-to-package top	0.2
Psi_JB	Junction-to-board	5.3
Rθ_JC	Junction-to-case (bottom)	0.8

(1) These values are based on a JEDEC-defined 2S2P system (with the exception of the Theta JC [RΘ_JC] value, which is based on a JEDEC-defined 1S0P system) and will change based on environment as well as application. For more information, see these EIA/JEDEC standards:

JESD51-2, Integrated Circuits Thermal Test Method Environmental Conditions - Natural Convection (Still Air)
JESD51-3, Low Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages
JESD51-7, High Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages
JESD51-9, Test Boards for Area Array Surface Mount Package Thermal Measurements

Power dissipation of 40 mW and an ambient temperature of 25ºC is assumed.

(2) m/s = meters per second

4.5 RF Characteristics

PARAMETER	MIN	TYP	MAX	UNIT	CONDITION
Frequency bands	820		960	MHz
	410		480	MHz
	(273.3)		(320)	MHz	For more information, see SWRA398, Using the CC112x/CC1175 at 274 to 320 MHz.
	164		192	MHz
	(205)		(240)	MHz	Contact TI for more information about the use of these frequency bands.
	(136.7)		(160)	MHz
Frequency resolution		30		Hz	In 820– to 960–MHz band
		15		Hz	In 410– to 480–MHz band
		6		Hz	In 164– to 192–MHz band
Data rate	0		200	kbps	Packet mode
Data rate	0		100	kbps	Transparent mode
Data rate step size		1e-4		bps

4.6 Regulatory Standards

PERFORMANCE MODE	FREQUENCY BAND	SUITABLE FOR COMPLIANCE WITH	COMMENTS
High-performance mode	820–960 MHz	ARIB T-108	Performance also suitable for systems targeting maximum allowed output power in the respective bands, using a range extender such as the CC1190 device
		ARIB T-96
		ETSI EN 300 220
		ETSI EN 54-25
		FCC Part 101
		FCC Part 24 Submask D
		FCC Part 15.247
		FCC Part 15.249
		FCC Part 90 Mask G
		FCC Part 90 Mask J
	410–480 MHz	ARIB T-67	Performance also suitable for systems targeting maximum allowed output power in the respective bands, using a range extender
		ARIB RCR STD-30
		ETSI EN 300 220
		FCC Part 90 Mask D
		FCC Part 90 Mask G
	164–192 MHz	ETSI EN 300 220	Performance also suitable for systems targeting maximum allowed output power in the respective bands, using a range extender
	164–192 MHz	FCC Part 90 Mask D
Low-power mode	820–960 MHz	ETSI EN 300 220
		FCC Part 15.247
		FCC Part 15.249
	410–480 MHz	ETSI EN 300 220
	164–192 MHz	ETSI EN 300 220

4.7 Current Consumption, Static Modes

T_A = 25°C, VDD = 3.0 V if nothing else is stated

PARAMETER	TYP	MAX	UNIT	CONDITION
Power down with retention	0.12	1	µA
Power down with retention	0.5		µA	Low-power RC oscillator running
XOFF mode	170		µA	Crystal oscillator / TCXO disabled
IDLE mode	1.3		mA	Clock running, system waiting with no radio activity

4.8 Current Consumption, Transmit Modes

4.8.1 950-MHz Band (High-Performance Mode)

T_A = 25°C, VDD = 3.0 V if nothing else is stated

PARAMETER	MIN	TYP	MAX	UNIT	CONDITION
TX current consumption +10 dBm		37		mA
TX current consumption 0 dBm		26		mA

4.8.2 868-, 915-, and 920-MHz Bands (High-Performance Mode)

T_A = 25°C, VDD = 3.0 V if nothing else is stated

PARAMETER	MIN	TYP	MAX	UNIT	CONDITION
TX current consumption +14 dBm		45		mA
TX current consumption +10 dBm		34		mA

4.8.3 434-MHz Band (High-Performance Mode)

T_A = 25°C, VDD = 3.0 V if nothing else is stated

PARAMETER	TYP	UNIT
TX current consumption +15 dBm	50	mA
TX current consumption +14 dBm	45	mA
TX current consumption +10 dBm	34	mA

4.8.4 169-MHz Band (High-Performance Mode)

T_A = 25°C, VDD = 3.0 V if nothing else is stated

PARAMETER	TYP	UNIT
TX current consumption +15 dBm	54	mA
TX current consumption +14 dBm	49	mA
TX current consumption +10 dBm	41	mA

4.8.5 Low-Power Mode

T_A = 25°C, VDD = 3.0 V, f_c = 869.5 MHz if nothing else is stated

PARAMETER	MIN	TYP	MAX	UNIT	CONDITION
TX current consumption +10 dBm		32		mA

4.9 Transmit Parameters

T_A = 25°C, VDD = 3.0 V, f_c = 869.5 MHz if nothing else is stated

PARAMETER	MIN	TYP	UNIT	CONDITION
Max output power		+12	dBm	At 950 MHz
		+14	dBm	At 915 and 920 MHz
		+15	dBm	At 915 and 920 MHz with VDD = 3.6 V
		+15	dBm	At 868 MHz
		+16	dBm	At 868 MHz with VDD = 3.6 V
		+15	dBm	At 433 MHz
		+16	dBm	At 433 MHz with VDD = 3.6 V
		+15	dBm	At 169 MHz
		+16	dBm	At 169 MHz with VDD = 3.6 V
Min output power		–11	dBm	Within fine step size range
Min output power		–40	dBm	Within coarse step size range
Output power step size		0.4	dB	Within fine step size range
Adjacent channel power		–75	dBc	4-GFSK 9.6 kbps in 12.5-kHz channel, measured in 100-Hz bandwidth at 434 MHz (FCC Part 90 Mask D compliant)
		–58	dBc	4-GFSK 9.6 kbps in 12.5-kHz channel, measured in 8.75-kHz bandwidth (ETSI–300 220 compliant)
		–61	dBc	2-GFSK 2.4 kbps in 12.5-kHz channel, 1.2-kHz deviation
Spurious emissions (Not including harmonics)		<–60	dBm
Harmonics				Transmission at +14 dBm (or maximum allowed in applicable band where this is less than +14 dBm) using TI reference design Emissions measured according to ARIB T-96 in 950-MHz band, ETSI EN 300 220 in 169-, 433-, and 868-MHz bands and FCC Part 15.247 in 450- and 915-MHz band Fourth harmonic in 915-MHz band will require extra filtering to meet FCC requirements if transmitting for long intervals (>50-ms periods).
Second Harm, 169 MHz		–39	dBm
Third Harm, 169 MHz		–58	dBm
Second Harm, 433 MHz		–56	dBm
Third Harm, 433 MHz		–51	dBm
Second Harm, 450 MHz		–60	dBm
Third Harm, 450 MHz		–45	dBm
Second Harm, 868 MHz		–40	dBm
Third Harm, 868 MHz		–42	dBm
Second Harm, 915 MHz		56	dBuV/m
Third Harm, 915 MHz		52	dBuV/m
Fourth Harm, 915 MHz		60	dBuV/m
Second Harm, 950 MHz		–58	dBm
Third Harm, 950 MHz		–42	dBm
Optimum load impedance
868-, 915-, and 920-MHz bands	35 + j35		Ω
433-MHz band	55 + j25		Ω
169-MHz band	80 + j0		Ω

4.10 PLL Parameters

4.10.1 High-Performance Mode

T_A = 25°C, VDD = 3.0 V, f_c = 869.5 MHz if nothing else is stated

PARAMETER	TYP	UNIT	CONDITION
Phase noise in 950-MHz band	–99	dBc/Hz	± 10 kHz offset
	–99	dBc/Hz	± 100 kHz offset
	–123	dBc/Hz	± 1 MHz offset
Phase noise in 868-, 915-, and 920-MHz bands	–99	dBc/Hz	± 10 kHz offset
	–100	dBc/Hz	± 100 kHz offset
	–122	dBc/Hz	± 1 MHz offset
Phase noise in 433-MHz band	–106	dBc/Hz	± 10 kHz offset
	–107	dBc/Hz	± 100 kHz offset
	–127	dBc/Hz	± 1 MHz offset
Phase noise in 169-MHz band	–111	dBc/Hz	± 10 kHz offset
	–116	dBc/Hz	± 100 kHz offset
	–135	dBc/Hz	± 1 MHz offset

4.10.2 Low-Power Mode

T_A = 25°C, VDD = 3.0 V, f_c = 869.5 MHz if nothing else is stated

PARAMETER	TYP	UNIT	CONDITION
Phase noise in 950-MHz band	–90	dBc/Hz	± 10 kHz offset
	–92	dBc/Hz	± 100 kHz offset
	–124	dBc/Hz	± 1 MHz offset
Phase noise in 868- and 915-MHz bands	–95	dBc/Hz	± 10 kHz offset
	–95	dBc/Hz	± 100 kHz offset
	–124	dBc/Hz	± 1 MHz offset
Phase noise in 433-MHz band	–98	dBc/Hz	± 10 kHz offset
	–102	dBc/Hz	± 100 kHz offset
	–129	dBc/Hz	± 1 MHz offset
Phase noise in 169-MHz band	–106	dBc/Hz	± 10 kHz offset
	–110	dBc/Hz	± 100 kHz offset
	–136	dBc/Hz	± 1 MHz offset

4.11 Wake-up and Timing

T_A = 25°C, VDD = 3.0 V, f_c = 869.5 MHz if nothing else is stated

PARAMETER	TYP	UNIT	CONDITION
Powerdown to IDLE	0.4	ms	Depends on crystal
IDLE to TX	166	µs	Calibration disabled
IDLE to TX	461	µs	Calibration enabled
TX to IDLE time	296	µs	Calibrate when leaving TX enabled
TX to IDLE time	0	µs	Calibrate when leaving TX disabled
Frequency synthesizer calibration	391	µs	When using SCAL strobe

4.12 High-Speed Crystal Oscillator

T_A = 25°C, VDD = 3.0 V if nothing else is stated

PARAMETER	MIN	TYP	MAX	UNIT	CONDITION
Crystal frequency	32		44	MHz	It is expected that there will be an increase in spurious emissions when the RF channel is close to multiples of XOSC in TX. We recommend that the level of spurious emissions be evaluated if the RF channel is closer than 1 MHz to multiples of XOSC in TX.
Load capacitance (C_L)		10		pF
ESR			60	Ω	Simulated over operating conditions
Start-up time		0.4		ms	Depends on crystal

4.13 High-Speed Clock Input (TCXO)

T_A = 25°C, VDD = 3.0 V if nothing else is stated

PARAMETER	MIN	MAX	UNIT	CONDITION
Clock frequency	32	44	MHz
TCXO with CMOS output				TCXO with CMOS output directly coupled to pin EXT_OSC
High input voltage	1.4	VDD	V
Low input voltage	0	0.6	V
Rise / Fall time		2	ns
Clipped sine output				TCXO clipped sine output connected to pin EXT_OSC through series capacitor
Clock input amplitude (peak-to-peak)	0.8	1.5	V

4.14 32-kHz Clock Input

T_A = 25°C, VDD = 3.0 V if nothing else is stated

PARAMETER	MIN	TYP	MAX	UNIT
Clock frequency		32		kHz
32 kHz clock input pin input high voltage	0.8×VDD			V
32 kHz clock input pin input low voltage			0.2×VDD	V

4.15 Low-Speed RC Oscillator

T_A = 25°C, VDD = 3.0 V if nothing else is stated

PARAMETER	TYP	UNIT	CONDITION
Frequency	32/40	kHz	After calibration (calibrated against the high-speed XOSC)
Frequency accuracy after calibration	±0.1	%	Relative to frequency reference (for example, 32-MHz crystal or TCXO)
Initial calibration time	1.6	ms

4.16 I/O and Reset

T_A = 25°C, VDD = 3.0 V if nothing else is stated

PARAMETER	MIN	TYP	MAX	UNIT	CONDITION
Logic input high voltage	0.8×VDD			V
Logic input low voltage			0.2×VDD	V
Logic output high voltage	0.8×VDD			V	At 4-mA output load or less
Logic output low voltage			0.2×VDD	V	At 4-mA output load or less
Power-on reset threshold		1.3		V	Voltage on DVDD pin

4.17 Temperature Sensor

T_A = 25°C, VDD = 3.0 V if nothing else is stated

PARAMETER	MIN	TYP	MAX	UNIT	CONDITION
Temperature sensor range	–40		85	°C
Temperature coefficient		2.66		mV / °C	Change in sensor output voltage versus change in temperature
Typical output voltage		794		mV	Typical sensor output voltage at T_A = 25°C, VDD = 3.0 V
VDD coefficient		1.17		mV / V	Change in sensor output voltage versus change in VDD

The CC1175 device can be configured to provide a voltage proportional to temperature on GPIO1. The temperature can be estimated by measuring this voltage (see Section 4.17). For more information, see the temperature sensor design note (SWRA415).

4.18 Typical Characteristics

T_A = 25°C, VDD = 3.0 V, f_c = 869.5 MHz if nothing else is stated.

All measurements performed on CC1120EM_868_915 rev.1.0.1, CC1120EM_955 rev.1.2.1, CC1120EM_420_470 rev.1.0.1 or CC1120EM_169 rev.1.2 (fxosc = 32 MHz), and CC1125EM_868_915 rev.1.1.0, CC1125EM_420_470 rev.1.1.0, CC1125EM_169 rev.1.1.0, CC1125EM-Cat1-868 (fxosc = 40 MHz).

Figure 4-6 was measured at the 50-Ω antenna connector.