SWRS116F August   2011  – October 2014 CC1175

PRODUCTION DATA.  

  1. 1 Device Overview
    1. 1.1 Features
    2. 1.2 Applications
    3. 1.3 Description
    4. 1.4 Functional Block Diagram
  2. 2Revision History
  3. 3Terminal Configuration and Functions
    1. 3.1 Pin Diagram
    2. 3.2 Pin Configuration
  4. 4Specifications
    1. 4.1  Absolute Maximum Ratings
    2. 4.2  Handling Ratings
    3. 4.3  Recommended Operating Conditions (General Characteristics)
    4. 4.4  Thermal Resistance Characteristics for RHB Package
    5. 4.5  RF Characteristics
    6. 4.6  Regulatory Standards
    7. 4.7  Current Consumption, Static Modes
    8. 4.8  Current Consumption, Transmit Modes
      1. 4.8.1 950-MHz Band (High-Performance Mode)
      2. 4.8.2 868-, 915-, and 920-MHz Bands (High-Performance Mode)
      3. 4.8.3 434-MHz Band (High-Performance Mode)
      4. 4.8.4 169-MHz Band (High-Performance Mode)
      5. 4.8.5 Low-Power Mode
    9. 4.9  Transmit Parameters
    10. 4.10 PLL Parameters
      1. 4.10.1 High-Performance Mode
      2. 4.10.2 Low-Power Mode
    11. 4.11 Wake-up and Timing
    12. 4.12 High-Speed Crystal Oscillator
    13. 4.13 High-Speed Clock Input (TCXO)data to TCXO table
    14. 4.14 32-kHz Clock Input
    15. 4.15 Low-Speed RC Oscillator
    16. 4.16 I/O and Reset
    17. 4.17 Temperature Sensor
    18. 4.18 Typical Characteristics
  5. 5Detailed Description
    1. 5.1 Block Diagram
    2. 5.2 Frequency Synthesizer
    3. 5.3 Transmitter
    4. 5.4 Radio Control and User Interface
    5. 5.5 Low-Power and High-Performance Modes
  6. 6Typical Application Circuit
  7. 7Device and Documentation Support
    1. 7.1 Device Support
      1. 7.1.1 Development Support
        1. 7.1.1.1 Configuration Software
      2. 7.1.2 Device and Development-Support Tool Nomenclature
    2. 7.2 Documentation Support
    3. 7.3 Community Resources
    4. 7.4 Trademarks
    5. 7.5 Electrostatic Discharge Caution
    6. 7.6 Glossary
  8. 8Mechanical Packaging and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

4 Specifications

All measurements performed on CC1120EM_868_915 rev.1.0.1, CC1120EM_955 rev.1.2.1, CC1120EM_420_470 rev.1.0.1, or CC1120EM_169 rev.1.2.

4.1 Absolute Maximum Ratings(1)(2)

PARAMETER MIN MAX UNIT CONDITION
Supply voltage (VDD, AVDD_x) –0.3 3.9 V All supply pins must have the same voltage
Voltage on any digital pin –0.3 VDD+0.3 V max 3.9
Voltage on analog pins
(including DCPL pins)		 –0.3 2.0 V
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under general characteristics is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to VSS, unless otherwise noted.

4.2 Handling Ratings

MIN MAX UNIT
Tstg Storage temperature range –40 125 °C
VESD Electrostatic discharge (ESD) performance: Human body model (HBM), per ANSI/ESDA/JEDEC JS001(1) –2 2 kV
Charged device model (CDM), per JESD22-C101(2) All pins –500 500 V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V HBM allows safe manufacturing with a standard ESD control process.

4.3 Recommended Operating Conditions (General Characteristics)

PARAMETER MIN TYP MAX UNIT CONDITION
Voltage supply range 2.0 3.6 V All supply pins must have the same voltage
Voltage on digital inputs 0 VDD V
Temperature range –40 85 °C Ambient

4.4 Thermal Resistance Characteristics for RHB Package

°C/W(1) AIR FLOW (m/s)(2)
RθJC Junction-to-case (top) 21.1 0.00
RθJB Junction-to-board 5.3 0.00
RθJA Junction-to-free air 31.3 0.00
PsiJT Junction-to-package top 0.2 0.00
PsiJB Junction-to-board 5.3 0.00
RθJC Junction-to-case (bottom) 0.8 0.00
(1) These values are based on a JEDEC-defined 2S2P system (with the exception of the Theta JC [RΘJC] value, which is based on a JEDEC-defined 1S0P system) and will change based on environment as well as application. For more information, see these EIA/JEDEC standards:
  • JESD51-2, Integrated Circuits Thermal Test Method Environmental Conditions - Natural Convection (Still Air)
  • JESD51-3, Low Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages
  • JESD51-7, High Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages
  • JESD51-9, Test Boards for Area Array Surface Mount Package Thermal Measurements
Power dissipation of 40 mW and an ambient temperature of 25ºC is assumed.
(2) m/s = meters per second

4.5 RF Characteristics

PARAMETER MIN TYP MAX UNIT CONDITION
Frequency bands 820 960 MHz
410 480 MHz
(273.3) (320) MHz For more information, see SWRA398, Using the CC112x/CC1175 at 274 to 320 MHz.
164 192 MHz
(205) (240) MHz Contact TI for more information about the use of these frequency bands.
(136.7) (160) MHz
Frequency resolution 30 Hz In 820– to 960–MHz band
15 Hz In 410– to 480–MHz band
6 Hz In 164– to 192–MHz band
Data rate 0 200 kbps Packet mode
0 100 kbps Transparent mode
Data rate step size 1e-4 bps

4.6 Regulatory Standards

PERFORMANCE MODE FREQUENCY BAND SUITABLE FOR COMPLIANCE WITH COMMENTS
High-performance mode 820–960 MHz ARIB T-108 Performance also suitable for systems targeting maximum allowed output power in the respective bands, using a range extender such as the CC1190 device
ARIB T-96
ETSI EN 300 220
ETSI EN 54-25
FCC Part 101
FCC Part 24 Submask D
FCC Part 15.247
FCC Part 15.249
FCC Part 90 Mask G
FCC Part 90 Mask J
410–480 MHz ARIB T-67 Performance also suitable for systems targeting maximum allowed output power in the respective bands, using a range extender
ARIB RCR STD-30
ETSI EN 300 220
FCC Part 90 Mask D
FCC Part 90 Mask G
164–192 MHz ETSI EN 300 220 Performance also suitable for systems targeting maximum allowed output power in the respective bands, using a range extender
FCC Part 90 Mask D
Low-power mode 820–960 MHz ETSI EN 300 220
FCC Part 15.247
FCC Part 15.249
410–480 MHz ETSI EN 300 220
164–192 MHz ETSI EN 300 220

4.7 Current Consumption, Static Modes

TA = 25°C, VDD = 3.0 V if nothing else is stated
PARAMETER MIN TYP MAX UNIT CONDITION
Power down with retention 0.12 1 µA
0.5 µA Low-power RC oscillator running
XOFF mode 170 µA Crystal oscillator / TCXO disabled
IDLE mode 1.3 mA Clock running, system waiting with no radio activity

4.8 Current Consumption, Transmit Modes

4.8.1 950-MHz Band (High-Performance Mode)

TA = 25°C, VDD = 3.0 V if nothing else is stated

PARAMETER MIN TYP MAX UNIT CONDITION
TX current consumption +10 dBm 37 mA
TX current consumption 0 dBm 26 mA

4.8.2 868-, 915-, and 920-MHz Bands (High-Performance Mode)

TA = 25°C, VDD = 3.0 V if nothing else is stated

PARAMETER MIN TYP MAX UNIT CONDITION
TX current consumption +14 dBm 45 mA
TX current consumption +10 dBm 34 mA

4.8.3 434-MHz Band (High-Performance Mode)

TA = 25°C, VDD = 3.0 V if nothing else is stated

PARAMETER MIN TYP MAX UNIT CONDITION
TX current consumption +15 dBm 50 mA
TX current consumption +14 dBm 45 mA
TX current consumption +10 dBm 34 mA

4.8.4 169-MHz Band (High-Performance Mode)

TA = 25°C, VDD = 3.0 V if nothing else is stated

PARAMETER MIN TYP MAX UNIT CONDITION
TX current consumption +15 dBm 54 mA
TX current consumption +14 dBm 49 mA
TX current consumption +10 dBm 41 mA

4.8.5 Low-Power Mode

TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else is stated

PARAMETER MIN TYP MAX UNIT CONDITION
TX current consumption +10 dBm 32 mA

4.9 Transmit Parameters

TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else is stated

PARAMETER MIN TYP MAX UNIT CONDITION
Max output power +12 dBm At 950 MHz
+14 dBm At 915 and 920 MHz
+15 dBm At 915 and 920 MHz with VDD = 3.6 V
+15 dBm At 868 MHz
+16 dBm At 868 MHz with VDD = 3.6 V
+15 dBm At 433 MHz
+16 dBm At 433 MHz with VDD = 3.6 V
+15 dBm At 169 MHz
+16 dBm At 169 MHz with VDD = 3.6 V
Min output power –11 dBm Within fine step size range
–40 dBm Within coarse step size range
Output power step size 0.4 dB Within fine step size range
Adjacent channel power –75 dBc 4-GFSK 9.6 kbps in 12.5-kHz channel, measured in 100-Hz bandwidth at 434 MHz (FCC Part 90 Mask D compliant)
–58 dBc 4-GFSK 9.6 kbps in 12.5-kHz channel, measured in 8.75-kHz bandwidth (ETSI–300 220 compliant)
–61 dBc 2-GFSK 2.4 kbps in 12.5-kHz channel, 1.2-kHz deviation
Spurious emissions
(Not including harmonics)		 <–60 dBm
Harmonics Transmission at +14 dBm (or maximum allowed in applicable band where this is less than +14 dBm) using TI reference design
Emissions measured according to ARIB T-96 in 950-MHz band, ETSI EN 300 220 in 169-, 433-, and 868-MHz bands and FCC Part 15.247 in 450- and 915-MHz band
Fourth harmonic in 915-MHz band will require extra filtering to meet FCC requirements if transmitting for long intervals (>50-ms periods).
Second Harm, 169 MHz –39 dBm
Third Harm, 169 MHz –58 dBm
Second Harm, 433 MHz –56 dBm
Third Harm, 433 MHz –51 dBm
Second Harm, 450 MHz –60 dBm
Third Harm, 450 MHz –45 dBm
Second Harm, 868 MHz –40 dBm
Third Harm, 868 MHz –42 dBm
Second Harm, 915 MHz 56 dBuV/m
Third Harm, 915 MHz 52 dBuV/m
Fourth Harm, 915 MHz 60 dBuV/m
Second Harm, 950 MHz –58 dBm
Third Harm, 950 MHz –42 dBm
Optimum load impedance
868-, 915-, and 920-MHz bands 35 + j35 Ω
433-MHz band 55 + j25 Ω
169-MHz band 80 + j0 Ω

4.10 PLL Parameters

4.10.1 High-Performance Mode

TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else is stated

PARAMETER MIN TYP MAX UNIT CONDITION
Phase noise in 950-MHz band –99 dBc/Hz ± 10 kHz offset
–99 dBc/Hz ± 100 kHz offset
–123 dBc/Hz ± 1 MHz offset
Phase noise in 868-, 915-, and 920-MHz bands –99 dBc/Hz ± 10 kHz offset
–100 dBc/Hz ± 100 kHz offset
–122 dBc/Hz ± 1 MHz offset
Phase noise in 433-MHz band –106 dBc/Hz ± 10 kHz offset
–107 dBc/Hz ± 100 kHz offset
–127 dBc/Hz ± 1 MHz offset
Phase noise in 169-MHz band –111 dBc/Hz ± 10 kHz offset
–116 dBc/Hz ± 100 kHz offset
–135 dBc/Hz ± 1 MHz offset

4.10.2 Low-Power Mode

TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else is stated

PARAMETER MIN TYP MAX UNIT CONDITION
Phase noise in 950-MHz band –90 dBc/Hz ± 10 kHz offset
–92 dBc/Hz ± 100 kHz offset
–124 dBc/Hz ± 1 MHz offset
Phase noise in 868- and 915-MHz bands –95 dBc/Hz ± 10 kHz offset
–95 dBc/Hz ± 100 kHz offset
–124 dBc/Hz ± 1 MHz offset
Phase noise in 433-MHz band –98 dBc/Hz ± 10 kHz offset
–102 dBc/Hz ± 100 kHz offset
–129 dBc/Hz ± 1 MHz offset
Phase noise in 169-MHz band –106 dBc/Hz ± 10 kHz offset
–110 dBc/Hz ± 100 kHz offset
–136 dBc/Hz ± 1 MHz offset

4.11 Wake-up and Timing

TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else is stated

PARAMETER MIN TYP MAX UNIT CONDITION
Powerdown to IDLE 0.4 ms Depends on crystal
IDLE to TX 166 µs Calibration disabled
461 µs Calibration enabled
TX to IDLE time 296 µs Calibrate when leaving TX enabled
0 µs Calibrate when leaving TX disabled
Frequency synthesizer calibration 391 µs When using SCAL strobe

4.12 High-Speed Crystal Oscillator

TA = 25°C, VDD = 3.0 V if nothing else is stated

PARAMETER MIN TYP MAX UNIT CONDITION
Crystal frequency 32 44 MHz It is expected that there will be an increase in spurious emissions when the RF channel is close to multiples of XOSC in TX. We recommend that the level of spurious emissions be evaluated if the RF channel is closer than 1 MHz to multiples of XOSC in TX.
Load capacitance (CL) 10 pF
ESR 60 Ω Simulated over operating conditions
Start-up time 0.4 ms Depends on crystal

4.13 High-Speed Clock Input (TCXO)

TA = 25°C, VDD = 3.0 V if nothing else is stated

PARAMETER MIN TYP MAX UNIT CONDITION
Clock frequency 32   44 MHz  
TCXO with CMOS output TCXO with CMOS output directly coupled to pin EXT_OSC
High input voltage 1.4 VDD V
Low input voltage 0 0.6 V
Rise / Fall time 2 ns
Clipped sine output TCXO clipped sine output connected to pin EXT_OSC through series capacitor
Clock input amplitude (peak-to-peak) 0.8 1.5 V

4.14 32-kHz Clock Input

TA = 25°C, VDD = 3.0 V if nothing else is stated

PARAMETER MIN TYP MAX UNIT CONDITION
Clock frequency 32 kHz
32 kHz clock input pin input high voltage 0.8×VDD V
32 kHz clock input pin input low voltage 0.2×VDD V

4.15 Low-Speed RC Oscillator

TA = 25°C, VDD = 3.0 V if nothing else is stated

PARAMETER MIN TYP MAX UNIT CONDITION
Frequency 32/40 kHz After calibration (calibrated against the high-speed XOSC)
Frequency accuracy after calibration ±0.1 % Relative to frequency reference (for example, 32-MHz crystal or TCXO)
Initial calibration time 1.6 ms

4.16 I/O and Reset

TA = 25°C, VDD = 3.0 V if nothing else is stated

PARAMETER MIN TYP MAX UNIT CONDITION
Logic input high voltage 0.8×VDD V
Logic input low voltage 0.2×VDD V
Logic output high voltage 0.8×VDD V At 4-mA output load or less
Logic output low voltage 0.2×VDD V
Power-on reset threshold 1.3 V Voltage on DVDD pin

4.17 Temperature Sensor

TA = 25°C, VDD = 3.0 V if nothing else is stated

PARAMETER MIN TYP MAX UNIT CONDITION
Temperature sensor range –40 85 °C
Temperature coefficient 2.66 mV / °C Change in sensor output voltage versus change in temperature
Typical output voltage 794 mV Typical sensor output voltage at
TA = 25°C, VDD = 3.0 V
VDD coefficient 1.17 mV / V Change in sensor output voltage versus change in VDD

The CC1175 device can be configured to provide a voltage proportional to temperature on GPIO1. The temperature can be estimated by measuring this voltage (see Section 4.17). For more information, see the temperature sensor design note (SWRA415).

4.18 Typical Characteristics

TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else is stated.

All measurements performed on CC1120EM_868_915 rev.1.0.1, CC1120EM_955 rev.1.2.1, CC1120EM_420_470 rev.1.0.1 or CC1120EM_169 rev.1.2 (fxosc = 32 MHz), and CC1125EM_868_915 rev.1.1.0, CC1125EM_420_470 rev.1.1.0, CC1125EM_169 rev.1.1.0, CC1125EM-Cat1-868 (fxosc = 40 MHz).

Figure 4-6 was measured at the 50-Ω antenna connector.

tc01_swrs116.pngFigure 4-1 Phase Noise in 868-MHz Band
tc03_swrs116.gifFigure 4-3 Output Power vs Voltage
Max Setting, 170 MHz
tc05_swrs116.gif
Figure 4-5 TX Current at 868 MHz
vs PA Power Setting
tc07_swrs116.png
200 kbps, DEV = 83 kHz (Outer Symbols), 4GFSK
Figure 4-7 Eye Diagram
tc10_swrs116.gif
Figure 4-9 GPIO Output Low Voltage vs Current Being Sinked
tc09_swrs116.png
9.6 kbps in 12.5-kHz Channel
Figure 4-11 FCC Part 90 Mask D
tc02_swrs116.gifFigure 4-2 Output Power vs Temperature
Max Setting, 170 MHz, 3.6 V
tc04_swrs116.gifFigure 4-4 Output Power
vs PA Power Setting
tc06_swrs116.pngFigure 4-6 Output Power vs Load Impedance (+14-dBm Setting)
tc08_swrs116.png
1.2 kbps, 2-FSK, DEV = 4 kHz
Figure 4-8 Eye Diagram
tc11_swrs116.gif
Figure 4-10 GPIO Output High Voltage vs Current Being Sourced