SCAS640G July   2000  – August 2016 CDCVF2505

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Description (continued)
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Switching Characteristics
    8. 7.8 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
      1. 13.1.1 Related Documentation
    2. 13.2 Receiving Notification of Documentation Updates
    3. 13.3 Community Resources
    4. 13.4 Trademarks
    5. 13.5 Electrostatic Discharge Caution
    6. 13.6 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VDD Supply voltage –0.5 4.3 V
VI Input voltage(2)(3) –0.5 VDD + 0.5 V
VO Output voltage(2)(3) –0.5 VDD + 0.5 V
IIK Input clamp current (VI < 0 or VI > VDD) ±50 mA
IOK Output clamp current (VO < 0 or VO > VDD) ±50 mA
IO Continuous total output current (VO = 0 to VDD) ±50 mA
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The input and output negative-voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
(3) This value is limited to 4.3 V maximum.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
Machine model (MM) ±300
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VDD Supply voltage 3 3.3 3.6 V
VIH High-level input voltage 0.7 VDD V
VIL Low-level input voltage 0.3 VDD V
VI Input voltage 0 VDD V
IOH High-level output current –12 mA
IOL Low-level output current 12 mA
TA Operating free-air temperature –40 85 °C

7.4 Thermal Information

THERMAL METRIC(1) CDCVF2505 UNIT
D (SOIC) PW (TSSOP)
8 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance(2) 112.3 175.8 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 55.8 61.8 °C/W
RθJB Junction-to-board thermal resistance 53.1 104.3 °C/W
ψJT Junction-to-top characterization parameter 12.8 7.7 °C/W
ψJB Junction-to-board characterization parameter 52.5 102.6 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance — — °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.
(2) The package thermal impedance is calculated in accordance with JESD 51.

7.5 Electrical Characteristics

over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
VIK Input voltage II = –18 mA, VDD = 3 V –1.2 V
VOH High-level output voltage IOH = –100 µA, VDD = MIN to MAX VDD – 0.2 V
IOH = –12 mA, VDD = 3 V 2.1
IOH = –6 mA, VDD = 3 V 2.4
VOL Low-level output voltage IOH = 100 µA, VDD = MIN to MAX 0.2 V
IOH = 12 mA, VDD = 3 V 0.8
IOH = 6 mA, VDD = 3 V 0.55
IOH High-level output current VO = 1 V, VDD = 3 V –27 mA
VO = 1.65 V, VDD = 3.3 V –36
IOL Low-level output current VO = 2 V, VDD = 3 V 27 mA
VO = 1.65 V, VDD = 3.3 V 40
II Input current VI = 0 V or VDD ±5 µA
CI Input capacitance VI = 0 V or VDD, VDD = 3.3 V 4.2 pF
Co Output capacitance VI = 0 V or VDD, VDD = 3.3 V Yn 2.8 pF
CLKOUT 5.2
(1) All typical values are at respective nominal VDD and 25°C

7.6 Timing Requirements

over recommended operating free-air temperature range (unless otherwise noted)
MIN TYP MAX UNIT
SUPPLY VOLTAGE, VDD = 3.3 V ±0.3 V
fclk Clock frequency 24 200 MHz
Input clock duty cycle 24 MHz to 85 MHz(1) 30% 85%
86 MHz to 200 MHz 40% 50% 60%
Stabilization time(2) 100 µs
SUPPLY VOLTAGE, VDD = 2.7 V
fclk Clock frequency 42 166 MHz
Input clock duty cycle 42 MHz to 85 MHz(1) 30% 70%
86 MHz to 166 MHz 40% 50% 60%
Stabilization time(2) 100 µs
(1) Assured by design but not 100% production tested
(2) Time required for the integrated PLL circuit to obtain phase lock of its feedback signal to its reference signal. For phase lock to be obtained, a fixed-frequency, fixed-phase reference signal must be present at CLKIN. Until phase lock is obtained, the specifications for propagation delay, skew, and jitter parameters given in the switching characteristics table are not applicable. This parameter does not apply for input modulation under SSC application.

7.7 Switching Characteristics

over recommended ranges of supply voltage and operating free-air temperature, CL = 25 pF, VDD = 3.3 V ±0.3 V(1)
PARAMETER TEST CONDITIONS MIN TYP(2) MAX UNIT
tpd Propagation delay, normalized
(see Figure 2)		 CLKIN to Yn, f = 66 MHz to 200 MHz –150 150 ps
tsk(o) Output skew(3) Yn to Yn 150 ps
tc(jit_cc) Jitter (cycle-to-cycle)
(see Figure 4)		 f = 66 MHz to 200 MHz 70 150 ps
f = 24 MHz to 50 MHz 200 400
odc Output duty cycle
(see Figure 3)		 f = 24 MHz to 200 MHz at 50% VDD 45% 55%
tr Rise time VO = 0.4 V to 2 V 0.5 2 ns
tf Fall time VO = 2 V to 0.4 V 0.5 2 ns
(1) Time required for the integrated PLL circuit to obtain phase lock of its feedback signal to its reference signal. For phase lock to be obtained, a fixed-frequency, fixed-phase reference signal must be present at CLKIN. Until phase lock is obtained, the specifications for propagation delay, skew, and jitter parameters given in the switching characteristics table are not applicable. This parameter does not apply for input modulation under SSC application.
(2) All typical values are at respective nominal VDD and 25°C
(3) The tsk(o) specification is only valid for equal loading of all outputs.

7.8 Typical Characteristics

at 3.3 V, 25°C (unless otherwise noted)
CDCVF2505 g002_cas640.gif Figure 1. tpd, Propagation Delay Time vs Frequency
CDCVF2505 g004_cas640.gif Figure 3. Duty Cycle vs Frequency
CDCVF2505 g003_cas640.gif Figure 2. tpd, Typical Propagation Delay Time
vs Frequency (Tuned for Minimum Delay)
CDCVF2505 g005_cas640.gif Figure 4. Cycle-Cycle Jitter vs Frequency