SLPS667B February   2017  – June 2024 CSD17318Q2

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Characteristics
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 Receiving Notification of Documentation Updates
    2. 5.2 Support Resources
    3. 5.3 Trademarks
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

4.3 Typical MOSFET Characteristics

TA = 25°C (unless otherwise noted)

CSD17318Q2 Transient Thermal Impedance
Figure 4-1 Transient Thermal Impedance
CSD17318Q2 Saturation Characteristics
Figure 4-2 Saturation Characteristics
CSD17318Q2 Transfer Characteristics
VDS = 5V
Figure 4-3 Transfer Characteristics
CSD17318Q2 Gate Charge
ID = 8AVDS = 15V
Figure 4-4 Gate Charge
CSD17318Q2 Threshold Voltage vs Temperature
ID = 250µA
Figure 4-6 Threshold Voltage vs Temperature
CSD17318Q2 Normalized On-State Resistance vs Temperature
ID = 8A
Figure 4-8 Normalized On-State Resistance vs Temperature
CSD17318Q2 Maximum Safe Operating Area
Single pulse, max RθJC = 7.9°C/W
Figure 4-10 Maximum Safe Operating Area
CSD17318Q2 Maximum Drain Current vs Temperature
Figure 4-12 Maximum Drain Current vs Temperature
CSD17318Q2 Capacitance
Figure 4-5 Capacitance
CSD17318Q2 On-State Resistance vs Gate-to-Source Voltage
ID = 8A
Figure 4-7 On-State Resistance vs Gate-to-Source Voltage
CSD17318Q2 Typical Diode Forward Voltage
Figure 4-9 Typical Diode Forward Voltage
CSD17318Q2 Single Pulse Unclamped Inductive Switching
Figure 4-11 Single Pulse Unclamped Inductive Switching