SLPS667B February 2017 – June 2024 CSD17318Q2
PRODUCTION DATA
This 30V, 12.6mΩ, 2mm × 2mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5V gate drive applications. The 2mm × 2mm SON offers excellent thermal performance for the size of the package.
TA = 25°C | TYPICAL VALUE | UNIT | ||
---|---|---|---|---|
VDS | Drain-to-Source Voltage | 30 | V | |
Qg | Gate Charge Total (4.5V) | 6.0 | nC | |
Qgd | Gate Charge Gate-to-Drain | 1.3 | nC | |
RDS(on) | Drain-to-Source On-Resistance | VGS = 2.5V | 20 | mΩ |
VGS = 4.5V | 13.9 | |||
VGS = 8V | 12.6 | |||
VGS(th) | Threshold Voltage | 0.9 | V |
PART NUMBER | QTY | MEDIA | PACKAGE | SHIP |
---|---|---|---|---|
CSD17318Q2 | 3000 | 7 Inch Reel | SON 2.00mm × 2.00mm Plastic Package | Tape and Reel |
CSD17318Q2T | 250 |
TA = 25°C | VALUE | UNIT | |
---|---|---|---|
VDS | Drain-to-Source Voltage | 30 | V |
VGS | Gate-to-Source Voltage | ±10 | V |
ID | Continuous Drain Current (Package Limited) | 21.5 | A |
Continuous Drain Current (Silicon Limited), TC = 25°C | 25 | ||
Continuous Drain Current(1) | 10 | ||
IDM | Pulsed Drain Current, TA = 25°C(2) | 68 | A |
PD | Power Dissipation(1) | 2.5 | W |
Power Dissipation, TC = 25°C | 16 | ||
TJ, TSTG | Operating Junction, Storage Temperature | –55 to 150 | °C |
EAS | Avalanche Energy, Single
Pulse, ID = 12.4A, L = 0.1mH, RG = 25Ω | 7.7 | mJ |
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