SLPS411G April 2013 – January 2022 CSD17381F4
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
This 90 mΩ, 30 V N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.
TA = 25°C | TYPICAL VALUE | UNIT | ||
---|---|---|---|---|
VDS | Drain-to-source voltage | 30 | V | |
Qg | Gate charge total (4.5 V) | 1040 | pC | |
Qgd | Gate charge gate-to-drain | 133 | pC | |
RDS(on) | Drain-to-source on-resistance | VGS = 1.8 V | 160 | mΩ |
VGS = 2.5 V | 110 | mΩ | ||
VGS = 4.5 V | 90 | mΩ | ||
VGS(th) | Threshold voltage | 0.85 | V |
DEVICE(1) | QTY | MEDIA | PACKAGE | SHIP |
---|---|---|---|---|
CSD17381F4 | 3000 | 7-Inch reel | Femto (0402) 1.0 mm ×0.6 mm SMD Lead Less | Tape and reel |
CSD17381F4T | 250 |
TA = 25°C unless otherwise stated | VALUE | UNIT | |
---|---|---|---|
VDS | Drain-to-source voltage | 30 | V |
VGS | Gate-to-source voltage | 12 | V |
ID | Continuous drain current, TA = 25°C(1) | 3.1 | A |
IDM | Pulsed Drain Current, TA = 25°C(2) | 12 | A |
IG | Continuous gate clamp current | 35 | mA |
Pulsed gate clamp current(2) | 350 | ||
PD | Power dissipation(1) | 500 | mW |
ESD Rating | Human body model (HBM) | 4 | kV |
Charged device model (CDM) | 2 | kV | |
TJ, Tstg | Operating junction and storage temperature range | –55 to 150 | °C |
EAS | Avalanche energy, single pulse
ID = 7.4 A, L = 0.1 mH, RG = 25 Ω | 2.7 | mJ |