DATA SHEET
CSD22204W –8 V P-Channel NexFET Power MOSFET
1 Features
- Low Resistance
- Small Footprint 1.5 mm × 1.5 mm
- Pb Free
- Gate ESD Protection
- RoHS Compliant
- Halogen Free
- Gate-Source Voltage Clamp
2 Applications
- Battery Management
- Battery Protection
- Load Switch Applications
3 Description
This –8 V, 8.2 mΩ, 1.5 mm × 1.5 mm device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile. Low on-resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.
Top View and Circuit Configuration
Product Summary
| TA = 25°C | TYPICAL VALUE | UNIT | ||
|---|---|---|---|---|
| VDS | Drain-to-Source Voltage | –8 | V | |
| Qg | Gate Charge Total (–4.5 V) | 18.9 | nC | |
| Qgd | Gate Charge Gate-to-Drain | 4.2 | nC | |
| RDS(on) | Drain-to-Source On-Resistance | VGS = –2.5 V | 11.5 | mΩ |
| VGS = –4.5 V | 8.2 | mΩ | ||
| VGS(th) | Threshold Voltage | –0.7 | V | |
Ordering Information(1)
| Device | Qty | Media | Package | Ship |
|---|---|---|---|---|
| CSD22204W | 3000 | 7-Inch Reel | 1.5 mm × 1.5 mm Wafer BGA Package | Tape and Reel |
| CSD22204WT | 250 | 7-Inch Reel |
- For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
| TA = 25°C | VALUE | UNIT | |
|---|---|---|---|
| VDS | Drain-to-Source Voltage | –8 | V |
| VGS | Gate-to-Source Voltage | –6 | V |
| ID | Continuous Drain Current(1) | –5 | A |
| Pulsed Drain Current(2) | –80 | A | |
| PD | Power Dissipation | 1.7 | W |
| TJ, Tstg |
Operating Junction and Storage Temperature Range |
–55 to 150 | °C |
- Device operating at a temperature of 105ºC.
- Typ RθJA = 75°C/W, Pulse width ≤100 μs, duty cycle ≤1%.
RDS(on) vs VGS |
Gate Charge |
4 Revision History
| DATE | REVISION | NOTES |
|---|---|---|
| March 2015 | * | Initial release. |
