CSD22204W
-8V, P channel NexFET™ power MOSFET, single WLP 1.5 mm x 1.5 mm, 9.9 mOhm, gate ESD protection
CSD22204W
- Low Resistance
- Small Footprint 1.5 mm × 1.5 mm
- Pb Free
- Gate ESD Protection
- RoHS Compliant
- Halogen Free
- Gate-Source Voltage Clamp
This 8 V, 8.2 mΩ, 1.5 mm × 1.5 mm device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile. Low on-resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.
Technical documentation
Type | Title | Date | ||
---|---|---|---|---|
* | Data sheet | CSD22204W –8 V P-Channel NexFET Power MOSFET datasheet | PDF | HTML | 09 Mar 2015 |
Application note | MOSFET Support and Training Tools (Rev. F) | PDF | HTML | 14 Jun 2024 | |
Application note | Semiconductor and IC Package Thermal Metrics (Rev. D) | PDF | HTML | 25 Mar 2024 | |
Application note | Using MOSFET Transient Thermal Impedance Curves In Your Design | PDF | HTML | 18 Dec 2023 | |
Application note | Solving Assembly Issues with Chip Scale Power MOSFETs | PDF | HTML | 14 Dec 2023 | |
Application note | Using MOSFET Safe Operating Area Curves in Your Design | PDF | HTML | 13 Mar 2023 | |
Application brief | Tips for Successfully Paralleling Power MOSFETs | PDF | HTML | 31 May 2022 | |
More literature | WCSP Handling Guide | 07 Nov 2019 | ||
Application note | AN-1112 DSBGA Wafer Level Chip Scale Package (Rev. AI) | 14 Jun 2019 |
Design & development
For additional terms or required resources, click any title below to view the detail page where available.
Package | Pins | CAD symbols, footprints & 3D models |
---|---|---|
DSBGA (YZF) | 9 | Ultra Librarian |
Ordering & quality
- RoHS
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- Lead finish/Ball material
- MSL rating/Peak reflow
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- Material content
- Qualification summary
- Ongoing reliability monitoring
- Fab location
- Assembly location
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