CSD25211W1015
-20-V, P channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 33 mOhm, gate ESD protection
Data sheet
CSD25211W1015
- Ultra-low on resistance
- Ultra-low Qg and Qgd
- Small footprint 1.0 mm × 1.5 mm
- Low profile 0.62 mm height
- Pb Free
- Gate-source voltage clamp
- Gate ESD protection – 3 kV
- RoHS compliant
- Halogen free
The device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile.
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Technical documentation
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View all 10 Type | Title | Date | ||
---|---|---|---|---|
* | Data sheet | CSD25211W1015, P-Channel NexFET Power MOSFET datasheet (Rev. B) | PDF | HTML | 16 Sep 2022 |
Application note | Avoid Common Mistakes When Selecting And Designing With Power MOSFETs | PDF | HTML | 06 Nov 2024 | |
Application note | MOSFET Support and Training Tools (Rev. F) | PDF | HTML | 14 Jun 2024 | |
Application note | Semiconductor and IC Package Thermal Metrics (Rev. D) | PDF | HTML | 25 Mar 2024 | |
Application note | Using MOSFET Transient Thermal Impedance Curves In Your Design | PDF | HTML | 18 Dec 2023 | |
Application note | Solving Assembly Issues with Chip Scale Power MOSFETs | PDF | HTML | 14 Dec 2023 | |
Application note | Using MOSFET Safe Operating Area Curves in Your Design | PDF | HTML | 13 Mar 2023 | |
Application brief | Tips for Successfully Paralleling Power MOSFETs | PDF | HTML | 31 May 2022 | |
More literature | WCSP Handling Guide | 07 Nov 2019 | ||
Application note | AN-1112 DSBGA Wafer Level Chip Scale Package (Rev. AI) | 14 Jun 2019 |
Design & development
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Support software
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Package | Pins | CAD symbols, footprints & 3D models |
---|---|---|
DSBGA (YZC) | 6 | Ultra Librarian |
Ordering & quality
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