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CSD16403Q5A

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25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.7 mOhm

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Data sheet

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Pin-for-pin with same functionality to the compared device
CSD17576Q5B ACTIVE 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.9 mOhm This product has lower resistance and a lower price.
CSD17581Q5A ACTIVE 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.2 mOhm This product has similar resistance and a lower price.

CSD16403Q5A

ACTIVE
Data sheet Order now

Product details

VDS (V) 25 VGS (V) 16 Type N-channel Configuration Single Rds(on) at VGS=10 V (max) (mΩ) 2.8 Rds(on) at VGS=4.5 V (max) (mΩ) 3.7 VGSTH typ (typ) (V) 1.6 QG (typ) (nC) 13.3 QGD (typ) (nC) 3.5 QGS (typ) (nC) 5.5 ID - silicon limited at TC=25°C (A) 100 ID - package limited (A) 100 Logic level Yes Rating Catalog Operating temperature range (°C) -55 to 150
VDS (V) 25 VGS (V) 16 Type N-channel Configuration Single Rds(on) at VGS=10 V (max) (mΩ) 2.8 Rds(on) at VGS=4.5 V (max) (mΩ) 3.7 VGSTH typ (typ) (V) 1.6 QG (typ) (nC) 13.3 QGD (typ) (nC) 3.5 QGS (typ) (nC) 5.5 ID - silicon limited at TC=25°C (A) 100 ID - package limited (A) 100 Logic level Yes Rating Catalog Operating temperature range (°C) -55 to 150
VSONP (DQJ) 8 29.4 mm² 4.9 x 6
  • Ultra Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5mm × 6mm Plastic Package
  • APPLICATIONS
    • Point-of-Load Synchronous Buck Converter for Applications in
      Networking, Telecom and Computing Systems
    • Optimized for Control FET Applications

NexFET is a trademark of Texas Instruments.
  • Ultra Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5mm × 6mm Plastic Package
  • APPLICATIONS
    • Point-of-Load Synchronous Buck Converter for Applications in
      Networking, Telecom and Computing Systems
    • Optimized for Control FET Applications

NexFET is a trademark of Texas Instruments.

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

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Technical documentation

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Type Title Date
* Data sheet CICLON NexFET™ Power MOSFETs datasheet (Rev. A) 27 Sep 2010
Application note MOSFET Support and Training Tools (Rev. F) PDF | HTML 14 Jun 2024
Application note Semiconductor and IC Package Thermal Metrics (Rev. D) PDF | HTML 25 Mar 2024
Application note Using MOSFET Transient Thermal Impedance Curves In Your Design PDF | HTML 18 Dec 2023
Application note QFN and SON PCB Attachment (Rev. C) PDF | HTML 06 Dec 2023
Application note Using MOSFET Safe Operating Area Curves in Your Design PDF | HTML 13 Mar 2023
Application brief Tips for Successfully Paralleling Power MOSFETs PDF | HTML 31 May 2022
Selection guide Power Management Guide 2018 (Rev. R) 25 Jun 2018
Application note Ringing Reduction Techniques for NexFET High Performance MOSFETs 16 Nov 2011

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