DATA SHEET
CSD22204W –8 V P-Channel NexFET Power MOSFET
1 Features
- Low Resistance
- Small Footprint 1.5 mm × 1.5 mm
- Pb Free
- Gate ESD Protection
- RoHS Compliant
- Halogen Free
- Gate-Source Voltage Clamp
2 Applications
- Battery Management
- Battery Protection
- Load Switch Applications
3 Description
This –8 V, 8.2 mΩ, 1.5 mm × 1.5 mm device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile. Low on-resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.
Top View and Circuit Configuration
Product Summary
| TA = 25°C | TYPICAL VALUE | UNIT | ||
|---|---|---|---|---|
| VDS | Drain-to-Source Voltage | –8 | V | |
| Qg | Gate Charge Total (–4.5 V) | 18.9 | nC | |
| Qgd | Gate Charge Gate-to-Drain | 4.2 | nC | |
| RDS(on) | Drain-to-Source On-Resistance | VGS = –2.5 V | 11.5 | mΩ |
| VGS = –4.5 V | 8.2 | mΩ | ||
| VGS(th) | Threshold Voltage | –0.7 | V | |
Ordering Information(1)
| Device | Qty | Media | Package | Ship |
|---|---|---|---|---|
| CSD22204W | 3000 | 7-Inch Reel | 1.5 mm × 1.5 mm Wafer BGA Package | Tape and Reel |
| CSD22204WT | 250 | 7-Inch Reel |
- For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
| TA = 25°C | VALUE | UNIT | |
|---|---|---|---|
| VDS | Drain-to-Source Voltage | –8 | V |
| VGS | Gate-to-Source Voltage | –6 | V |
| ID | Continuous Drain Current(1) | –5 | A |
| Pulsed Drain Current(2) | –80 | A | |
| PD | Power Dissipation | 1.7 | W |
| TJ, Tstg |
Operating Junction and Storage Temperature Range |
–55 to 150 | °C |
- Device operating at a temperature of 105ºC.
- Typ RθJA = 75°C/W, Pulse width ≤100 μs, duty cycle ≤1%.
RDS(on) vs VGS |
Gate Charge |
4 Revision History
| DATE | REVISION | NOTES |
|---|---|---|
| March 2015 | * | Initial release. |
5 Specifications
5.1 Electrical Characteristics
(TA = 25°C unless otherwise stated)| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| STATIC CHARACTERISTICS | |||||||
| BVDSS | Drain-to-Source Voltage | VGS = 0 V, IDS = –250 μA | –8 | V | |||
| BVGSS | Gate-to-Source Voltage | VDS = 0 V, IG = –5 μA | –6 | V | |||
| IDSS | Drain-to-Source Leakage Current | VGS = 0 V, VDS = –6.4 V | –1 | μA | |||
| IGSS | Gate-to-Source Leakage Current | VDS = 0 V, VGS = –6 V | –4 | μA | |||
| VGS(th) | Gate-to-Source Threshold Voltage | VDS = VGS, IDS = –250 μA | –0.45 | –0.7 | –0.95 | V | |
| RDS(on) | Drain-to-Source On-Resistance | VGS = –2.5 V, IDS = –2 A | 11.5 | 14.0 | mΩ | ||
| VGS = –4.5 V, IDS = –2 A | 8.2 | 9.9 | mΩ | ||||
| gƒs | Transconductance | VDS = –0.8 V, IDS = –2 A | 18 | S | |||
| DYNAMIC CHARACTERISTICS | |||||||
| CISS | Input Capacitance | VGS = 0 V, VDS = –4 V, ƒ = 1 MHz |
870 | 1130 | pF | ||
| COSS | Output Capacitance | 445 | 580 | pF | |||
| CRSS | Reverse Transfer Capacitance | 204 | 265 | pF | |||
| RG | Series Gate Resistance | 300 | Ω | ||||
| Qg | Gate Charge Total (–4.5 V) | VDS = –4 V, ID = –2 A |
18.9 | 24.6 | nC | ||
| Qgd | Gate Charge - Gate-to-Drain | 4.2 | nC | ||||
| Qgs | Gate Charge - Gate-to-Source | 3.2 | nC | ||||
| Qg(th) | Gate Charge at Vth | 0.7 | nC | ||||
| QOSS | Output Charge | VDS = –4 V, VGS = 0 V | 3.1 | nC | |||
| td(on) | Turn On Delay Time | VDS = –4 V, VGS = –4.5 V, IDS = –2 A, RG = 0 Ω |
58 | ns | |||
| tr | Rise Time | 600 | ns | ||||
| td(off) | Turn Off Delay Time | 3450 | ns | ||||
| tƒ | Fall Time | 2290 | ns | ||||
| DIODE CHARACTERISTICS | |||||||
| VSD | Diode Forward Voltage | IDS = –2 A, VGS = 0 V | –0.7 | –1.0 | V | ||
5.2 Thermal Information
(TA = 25°C unless otherwise stated)| THERMAL METRIC | TYPCIAL VALUES | UNIT | |||
|---|---|---|---|---|---|
| RθJA | Junction-to-Ambient Thermal Resistance(1) | 75 | °C/W | ||
| Junction-to-Ambient Thermal Resistance(2) | 230 | ||||
(1) Device mounted on FR4 material with 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu.
(2) Device mounted on FR4 material with minimum Cu mounting area.
 |
Typ RθJA = 75°C/W when mounted on 1inch2 of 2 oz. Cu. |
 |
Typ RθJA = 230°C/W when mounted on minimum pad area of 2 oz. Cu. |
5.3 Typical MOSFET Characteristics
(TA = 25°C unless otherwise stated)
| ID = –2 A | VDS = –4 V | |
| ID = –250 µA | ||
| ID = –2 A | ||
| Single Pulse, Max RθJA = 75°C/W | ||
| VDS = –4 V | ||
6 Device and Documentation Support
6.1 Trademarks
All other trademarks are the property of their respective owners.
6.2 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
6.3 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
