SLPS559 March   2015 CSD22204W

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 CSD22204W Package Dimensions
    2. 7.2 Recommended Land Pattern
    3. 7.3 Tape and Reel Information

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • YZF|9
Thermal pad, mechanical data (Package|Pins)

5 Specifications

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-Source Voltage VGS = 0 V, IDS = –250 μA –8 V
BVGSS Gate-to-Source Voltage VDS = 0 V, IG = –5 μA –6 V
IDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = –6.4 V –1 μA
IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = –6 V –4 μA
VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, IDS = –250 μA –0.45 –0.7 –0.95 V
RDS(on) Drain-to-Source On-Resistance VGS = –2.5 V, IDS = –2 A 11.5 14.0 mΩ
VGS = –4.5 V, IDS = –2 A 8.2 9.9 mΩ
gƒs Transconductance VDS = –0.8 V, IDS = –2 A 18 S
DYNAMIC CHARACTERISTICS
CISS Input Capacitance VGS = 0 V, VDS = –4 V,
ƒ = 1 MHz		 870 1130 pF
COSS Output Capacitance 445 580 pF
CRSS Reverse Transfer Capacitance 204 265 pF
RG Series Gate Resistance 300 Ω
Qg Gate Charge Total (–4.5 V) VDS = –4 V,
ID = –2 A		 18.9 24.6 nC
Qgd Gate Charge - Gate-to-Drain 4.2 nC
Qgs Gate Charge - Gate-to-Source 3.2 nC
Qg(th) Gate Charge at Vth 0.7 nC
QOSS Output Charge VDS = –4 V, VGS = 0 V 3.1 nC
td(on) Turn On Delay Time VDS = –4 V, VGS = –4.5 V,
IDS = –2 A, RG = 0 Ω		 58 ns
tr Rise Time 600 ns
td(off) Turn Off Delay Time 3450 ns
tƒ Fall Time 2290 ns
DIODE CHARACTERISTICS
VSD Diode Forward Voltage IDS = –2 A, VGS = 0 V –0.7 –1.0 V

5.2 Thermal Information

(TA = 25°C unless otherwise stated)
THERMAL METRIC TYPCIAL VALUES UNIT
RθJA Junction-to-Ambient Thermal Resistance(1) 75 °C/W
Junction-to-Ambient Thermal Resistance(2) 230
(1) Device mounted on FR4 material with 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu.
(2) Device mounted on FR4 material with minimum Cu mounting area.
CSD22204W M0149-01_LPS266.gif
 Typ RθJA = 75°C/W when mounted on 1inch2 of 2 oz. Cu.
CSD22204W M0150-01_LPS266.gif
 Typ RθJA = 230°C/W when mounted on minimum pad area of
2 oz. Cu.

5.3 Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)
CSD22204W D001_SLPS528.png
Figure 1. Transient Thermal Impedance
CSD22204W D002_SLPS528.gif
Figure 2. Saturation Characteristics
CSD22204W D004_SLPS528_r2.gif
ID = –2 A VDS = –4 V
Figure 4. Gate Charge
CSD22204W D006_SLPS528.gif
ID = –250 µA
Figure 6. Threshold Voltage vs Temperature
CSD22204W D008_SLPS528.gif
ID = –2 A
Figure 8. Normalized On-State Resistance vs Temperature
CSD22204W D010_SLPS528_r2.gif
Single Pulse, Max RθJA = 75°C/W
Figure 10. Maximum Safe Operating Area
CSD22204W D003_SLPS528.gif
VDS = –4 V
Figure 3. Transfer Characteristics
CSD22204W D005_SLPS528_r2.gif
Figure 5. Capacitance
CSD22204W D007_SLPS528_r2.gif
Figure 7. On-State Resistance vs Gate-to-Source Voltage
CSD22204W D009_SLPS528_r3.gif
Figure 9. Typical Diode Forward Voltage
CSD22204W D011_SLPS528_r2.gif
Figure 11. Maximum Drain Current vs Temperature