The device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile.
Product Summary
TA = 25°C unless otherwise stated |
TYPICAL VALUE |
UNIT |
VDS |
Drain-to-Source Voltage |
–20 |
V |
Qg |
Gate
Charge Total (–4.5V) |
3.4 |
nC |
Qgd |
Gate
Charge Gate to Drain |
0.2 |
nC |
RDS(on) |
Drain-to-Source On Resistance |
VGS = –2.5 V |
36 |
mΩ |
VGS = –4.5 V |
27 |
mΩ |
VGS(th) |
Voltage Threshold |
–0.8 |
V |
Ordering InformationDevice | Package | Media | Qty | Ship |
---|
CSD25211W1015 | 1 × 1.5 Wafer Level Package | 7-inch reel | 3000 | Tape and Reel |
Absolute Maximum RatingsTA = 25°C unless otherwise stated | VALUE | UNIT |
VDS | Drain-to-Source Voltage | -20 | V |
VGS | Gate-to-Source Voltage | -6 | V |
ID | Continuous Drain Current,
TA = 25°C(1) | -3.2 | A |
IDM | Pulsed Drain Current,
TA = 25°C(2) | -9.5 | A |
IG | Continuous Gate Current,
TA = 25°C | -0.5 | A |
Pulsed Gate Current | -7 | A |
PD | Power Dissipation(1) | 1 | W |
TSTG | Storage Temperature Range | –55 to 150 | °C |
TJ | Operating Junction Temperature Range |
(1) Typical RθJA = 119°C/W on 1 inch2 of 2 oz. Cu on 0.06-inch thick FR4 PCB.
(2) Pulse width ≤ 10 µs, duty cycle ≤ 2%
RDS(ON) vs
VGS
Gate Charge