SLPS296B February   2012  – September 2022 CSD25211W1015

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Electrical Characteristics
  6. 6 Thermal Characteristics
  7. 7 Typical MOSFET Characteristics
  8. 8 Mechanical Data
    1. 8.1 CSD25211W1015 Package Dimensions
    2. 8.2 Land Pattern Recommendation
  9. 9 Electrostatic Discharge Caution
  10. 10Device and Documentation Support
    1. 10.1 Third-Party Products Disclaimer
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • YZC|6
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5 Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Static Characteristics
BVDSS Drain-to-Source Voltage VGS = 0 V, ID = –250 μA –20 V
BVGSS Gate-to-Source Voltage VDS = 0 V, IG = –250 μA –6.1 –7.2 V
IDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = –16 V –1 μA
IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = –6 V –100 nA
VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, ID = –250 μA –0.5 –0.8 –1.1 V
RDS(on) Drain-to-Source On Resistance VGS = –2.5 V, ID = –1.5 A 36 44 mΩ
VGS = –4.5 V, ID = –1.5 A 27 33 mΩ
gfs Transconductance VDS = –10 V, ID = –1.5 A 12 S
Dynamic Characteristics
CISS Input Capacitance VGS = 0 V, VDS = –10 V, ƒ = 1 MHz 475 570 pF
COSS Output Capacitance 234 281 pF
CRSS Reverse Transfer Capacitance 10.5 13.1 pF
Qg Gate Charge Total (–4.5 V) VDS = –10 V, ID = –1.5 A 3.4 4.1 nC
Qgd Gate Charge Gate to Drain 0.2 nC
Qgs Gate Charge Gate to Source 1.1 nC
Qg(th) Gate Charge at Vth 0.6 nC
QOSS Output Charge VDS = –10 V, VGS = 0 V 3.8 nC
td(on) Turn On Delay Time VDS = –10 V, VGS = –4.5 V, ID = –1.5 A
RG = 4 Ω		 13.6 ns
tr Rise Time 8.8 ns
td(off) Turn Off Delay Time 36.9 ns
tf Fall Time 14.2 ns
Diode Characteristics
VSD Diode Forward Voltage IS = –1.5 A, VGS = 0 V –0.8 –1 V
Qrr Reverse Recovery Charge Vdd= –10 V, IF = –1.5 A, di/dt = 200 A/μs 6.9 nC
trr Reverse Recovery Time 11.6 ns