SLPS296B February   2012  – September 2022 CSD25211W1015

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Electrical Characteristics
  6. 6 Thermal Characteristics
  7. 7 Typical MOSFET Characteristics
  8. 8 Mechanical Data
    1. 8.1 CSD25211W1015 Package Dimensions
    2. 8.2 Land Pattern Recommendation
  9. 9 Electrostatic Discharge Caution
  10. 10Device and Documentation Support
    1. 10.1 Third-Party Products Disclaimer
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • YZC|6
Thermal pad, mechanical data (Package|Pins)
Orderable Information

10.13 Electrostatic Discharge Caution

GUID-D6F43A01-4379-4BA1-8019-E75693455CED-low.gif This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.