SLPS504B April   2014  – July 2017 CSD95378BQ5M

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Pin Configuration and Functions
  6. 6Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
  7. 7Application Schematic
    1. 7.1 Typical Application
  8. 8Device and Documentation Support
    1. 8.1 Receiving Notification of Documentation Updates
    2. 8.2 Community Resources
    3. 8.3 Trademarks
    4. 8.4 Electrostatic Discharge Caution
    5. 8.5 Glossary
  9. 9Mechanical, Packaging, and Orderable Information
    1. 9.1 Mechanical Drawing
    2. 9.2 Recommended PCB Land Pattern
    3. 9.3 Recommended Stencil Opening

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DQP|12
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

TA = 25°C (unless otherwise noted)(1)
MIN MAX UNIT
VIN to PGND –0.3 25 V
VIN to VSW –0.3 25 V
VIN to VSW (10 ns) –7 27 V
VSW to PGND –0.3 20 V
VSW to PGND (10 ns) –7 23 V
VDD to PGND –0.3 7 V
ENABLE, PWM, FCCM. TAO, IOUT, REFIN to PGND –0.3 VDD + 0.3 V V
BOOT to BOOT_R(2) –0.3 VDD + 0.3 V V
Power dissipation, PD 12 W
Operating junction temperature, TJ –55 150 °C
Storage temperature, Tstg –55 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Should not exceed 7 V.

6.2 ESD Ratings

MIN MAX UNIT
V(ESD) Electrostatic discharge Human-body model (HBM) –2000 2000 V
Charged-device model (CDM) –500 500

6.3 Recommended Operating Conditions

TA = 25°C (unless otherwise noted)
MIN MAX UNIT
VDD Gate drive voltage 4.5 5.5 V
VIN Input supply voltage(1) 16 V
VOUT Output voltage 5.5 V
IOUT Continuous output current VIN = 12 V, VDD = 5 V, VOUT = 1.2 V,
ƒSW = 500 kHz, LOUT = 0.225 µH(2)		 60
IOUT-PK Peak output current(3) 90 A
ƒSW Switching frequency CBST = 0.1 µF (min) 1250 kHz
On-time duty cycle ƒSW = 1 MHz 85%
Minimum PWM on time 40 ns
Operating temperature –40 125 °C
(1) Operating at high VIN can create excessive AC voltage overshoots on the switch node (VSW) during MOSFET switching transients. For reliable operation, the switch node (VSW) to ground voltage must remain at or below the Absolute Maximum Ratings.
(2) Measurement made with six 10-µF (TDK C3216X5R1C106KT or equivalent) ceramic capacitors placed across VIN to PGND pins.
(3) System conditions as defined in Note 1. Peak output current is applied for tp = 50 µs.

6.4 Thermal Information

TA = 25°C (unless otherwise noted)
THERMAL METRIC MIN TYP MAX UNIT
RθJC Junction-to-case (top-of-package) thermal resistance(1) 15 °C/W
RθJB Junction-to-board thermal resistance(2) 1.5
(1) RθJC is determined with the device mounted on a 1-in2 (6.45 -cm2), 2-oz (0.071-mm) thick Cu pad on a 1.5-in × 1.5-in, 0.06-in (1.52-mm) thick FR4 board.
(2) RθJB value based on hottest board temperature within 1 mm of the package.