SLASF63 june 2023 DAC539E4W
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
INTERNAL REFERENCE | ||||||
Initial accuracy | TA = 25°C for all measurements | 1.1979 | 1.212 | 1.224 | V | |
Reference output temperature coefficient(1) (2) | 50 | ppm/°C | ||||
EXTERNAL REFERENCE | ||||||
VREF input impedance(1) (3) | 192 | kΩ-ch | ||||
EEPROM | ||||||
Endurance(1) | –40°C ≤ TA ≤ +85°C | 20000 | Cycles | |||
TA = 125°C | 1000 | |||||
Data retention(1) | 50 | Years | ||||
EEPROM programming write cycle time(1) | 200 | ms | ||||
Device boot-up time(1) | Time taken from power valid (VDD ≥ 1.7 V) to output valid state (output state as programmed in EEPROM), 0.5-µF capacitor on the CAP pin | 5 | ms | |||
DIGITAL INPUTS | ||||||
Pin capacitance | Per pin | 10 | pF | |||
POWER | ||||||
IDD | Current flowing into VDD | DAC in sleep mode, internal reference powered down, external reference at 5.5 V | 28 | µA | ||
Current flowing into VDD(1) | DAC in sleep mode, internal reference enabled, additional current through internal reference | 10 | ||||
DAC channels enabled, internal reference enabled, additional current through internal reference per DAC channel in voltage-output mode | 12.5 | µA-ch | ||||
Normal operation, state machine enabled | 1.53 | mA | ||||
HIGH-IMPEDANCE OUTPUT | ||||||
ILEAK | Current flowing into OUTx and AINx | DAC in Hi-Z output mode, 1.7 V ≤ VDD ≤ 5.5 V | 10 | nA |