Over operating free-air temperature range (unless otherwise noted). The functional performance of the device specified in this data sheet is achieved when operating the device within the limits defined by this table. No level of performance is implied when operating the device above or below these limits. | MIN | NOM | MAX | UNIT |
---|
VOLTAGE SUPPLY |
VCC | LVCMOS logic supply voltage(1) | 1.65 | 1.8 | 1.95 | V |
VOFFSET | Mirror electrode and HVCMOS voltage(1)(2) | 9.5 | 10 | 10.5 | V |
VBIAS | Mirror electrode voltage(1) | 17.5 | 18 | 18.5 | V |
VRESET | Mirror electrode voltage(1) | –14.5 | –14 | –13.5 | V |
|VBIAS – VOFFSET| | Supply voltage difference (absolute value)(3) | | | 10.5 | V |
|VBIAS – VRESET| | Supply voltage difference (absolute value)(4) | | | 33 | V |
LVCMOS INTERFACE |
VIH(DC) | DC input high voltage(5) | 0.7 × VCC | | VCC + 0.3 | V |
VIL(DC) | DC input low voltage(5) | –0.3 | | 0.3 × VCC | V |
VIH(AC) | AC input high voltage(5) | 0.8 × VCC | | VCC + 0.3 | V |
VIL(AC) | AC input low voltage(5) | –0.3 | | 0.2 × VCC | V |
tPWRDNZ | PWRDNZ pulse duration(6) | 10 | | | ns |
SCP INTERFACE |
ƒSCPCLK | SCP clock frequency(7) | | | 500 | kHz |
tSCP_PD | Propagation delay, Clock to Q, from rising–edge of SCPCLK to valid SCPDO(8) | 0 | | 900 | ns |
tSCP_NEG_ENZ | Time between falling-edge of SCPENZ and the first rising- edge of SCPCLK | 1 | | | µs |
tSCP_POS_ENZ | Time between falling-edge of SCPCLK and the rising-edge of SCPENZ | 1 | | | µs |
tSCP_DS | SCPDI Clock setup time (before SCPCLK falling edge)(8) | 800 | | | ns |
tSCP_DH | SCPDI Hold time (after SCPCLK falling edge)(8) | 900 | | | ns |
tSCP_PW_ENZ | SCPENZ inactive pulse duration (high level) | 2 | | | µs |
LVDS INTERFACE |
ƒCLOCK | Clock frequency for LVDS interface (all channels), DCLK(9) | | | 400 | MHz |
|VID| | Input differential voltage (absolute value)(10) | 150 | 300 | 440 | mV |
VCM | Common mode voltage(10) | 1100 | 1200 | 1300 | mV |
VLVDS | LVDS voltage(10) | 880 | | 1520 | mV |
tLVDS_RSTZ | Time required for LVDS receivers to recover from PWRDNZ | | | 2000 | ns |
ZIN | Internal differential termination resistance | 80 | 100 | 120 | Ω |
ZLINE | Line differential impedance (PWB/trace) | 90 | 100 | 110 | Ω |
ENVIRONMENTAL |
TARRAY | Array temperature, long–term operational(11)(12)(13) | 10 | | 40 to 70(14) | °C |
Array temperature, short–term
operational, 500-hour max(12)(15) | 0 | | 10 | °C |
TWINDOW | Window temperature – operational(16)(22) | | | 85 | °C |
|TDELTA| | Absolute temperature delta between any point on the window edge and the ceramic test point TP1(17) | | | 14 | °C |
TDP -AVG | Average dew point temperature
(non-condensing)(18) | | | 28 | °C |
TDP-ELR | Elevated dew point temperature range (non-condensing)(19) | 28 | | 36 | °C |
CTELR | Cumulative time in elevated dew point temperature range | | | 24 | Months |
ILLθ | Illumination marginal ray angle(22) | | | 55 | degrees |
SOLID STATE ILLUMINATION |
ILLUV | Illumination power at wavelengths < 410nm(11)(21) | | | 10 | mW/cm2 |
ILLVIS | Illumination power at wavelengths ≥ 410nm and ≤ 800nm(20)(21) | | | 44.9 | W/cm2 |
ILLIR | Illumination power at wavelengths > 800nm(21) | | | 10 | mW/cm2 |
ILLBLU | Illumination power at wavelengths ≥ 410nm and ≤ 475nm(20)(21) | | | 14.3 | W/cm2 |
ILLBLU1 | Illumination power at wavelengths ≥ 410nm and ≤ 440nm (20)(21) | | | 2.3 | W/cm2 |
LAMP ILLUMINATION |
ILLUV | Illumination power at wavelengths < 395nm(11)(21) | | | 2.0 | mW/cm2 |
ILLVIS | Illumination power at wavelengths ≥ 395nm and ≤ 800nm(20)(21) | | | 36.8 | W/cm2 |
ILLIR | Illumination power at wavelengths > 800nm(21) | | | 10 | mW/cm2 |
(1) All voltages are referenced to common ground VSS. VBIAS, VCC, VOFFSET, and VRESET power supplies are all required for proper DMD operation. VSS must also be connected.
(2) VOFFSET supply transients must fall within specified max voltages.
(3) To prevent excess current, the supply voltage delta |V
BIAS – V
OFFSET| must be less than specified limit. See
Section 8,
Figure 8-1,
Table 8-1.
(4) To prevent excess current, the supply voltage delta |V
BIAS – V
RESET| must be less than specified limit. See
Section 8,
Figure 8-1,
Table 8-1.
(5) Low-speed interface is LPSDR and adheres to the Electrical Characteristics and AC/DC Operating Conditions table in JEDEC Standard No. 209B, “Low-Power Double Data Rate (LPDDR)” JESD209B.Tester Conditions for VIH and VIL.
- Frequency = 60MHz. Maximum Rise Time = 2.5ns @ (20% – 80%)
- Frequency = 60MHz. Maximum Fall Time = 2.5ns @ (80% – 20%)
(6) PWRDNZ input pin resets the SCP and disables the LVDS receivers. PWRDNZ input pin overrides SCPENZ input pin and tristates the SCPDO output pin.
(7) The SCP clock is a gated clock. Duty cycle shall be 50% ± 10%. SCP parameter is related to the frequency of DCLK.
(11) Simultaneous exposure of the DMD to the maximum
Section 5.4 for temperature and UV illumination reduces device lifetime.
(12) The array temperature cannot be measured directly and must be computed analytically from the temperature measured at test point 1 (TP1) shown in
Figure 6-2 and the package
Section 5.5 using the calculation in
Section 6.6.
(13) Long-term is defined as the usable life of the device.
(14) Per
Figure 5-1, the maximum operational array temperature should be derated based on the micromirror landed duty cycle that the DMD experiences in the end application. See
Section 6.8 for a definition of micromirror landed duty cycle.
(15) Short-term is defined as cumulative time over the usable life of the device.
(16) The locations of thermal test points TP2, TP3, TP4, and TP5 in
Figure 6-2 are intended to measure the highest window edge temperature. For most applications, the locations shown are representative of the highest window edge temperature. If a particular application causes additional points on the window edge to be at a higher temperature, test points should be added to those locations.
(17) Temperature delta is the highest difference between the ceramic test point 1 (TP1) and anywhere on the window edge as shown in
Figure 6-2. The window test points TP2, TP3, TP4, and TP5 shown in
Figure 6-2 are intended to result in the worst-case delta temperature. If a particular application causes another point on the window edge to result in a larger delta in temperature, that point should be used.
(18) The average over time (including storage and operating) that the device is not in the "elevated dew point temperature range."
(19) Exposure to dew point temperatures in the elevated range during storage and operation should be limited to less than a total cumulative time of CTELR.
(20) The maximum allowable optical power incident on the DMD is limited by the maximum optical power density for each wavelength range specified and the micromirror array temperature (TARRAY).
(22) The maximum marginal ray angle of the incoming illumination light at any point in the micromirror array, including pond of micromirrors (POM), should not exceed 55 degrees from the normal to the device array plane. The device window aperture has not necessarily been designed to allow incoming light at higher maximum angles to pass to the micromirrors, and the device performance has not been tested nor qualified at angles exceeding this. Illumination light exceeding this angle outside the micromirror array (including POM) will contribute to thermal limitations described in this document, and may negatively affect lifetime.