SNLS663 December   2021 DP83TC814R-Q1 , DP83TC814S-Q1

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Timing Diagrams
    8. 7.8 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Diagnostic Tool Kit
        1. 8.3.1.1 Signal Quality Indicator
        2. 8.3.1.2 Electrostatic Discharge Sensing
        3. 8.3.1.3 Time Domain Reflectometry
        4. 8.3.1.4 Voltage Sensing
        5. 8.3.1.5 BIST and Loopback Modes
          1. 8.3.1.5.1 Data Generator and Checker
          2. 8.3.1.5.2 xMII Loopback
          3. 8.3.1.5.3 PCS Loopback
          4. 8.3.1.5.4 Digital Loopback
          5. 8.3.1.5.5 Analog Loopback
          6. 8.3.1.5.6 Reverse Loopback
      2. 8.3.2 Compliance Test Modes
        1. 8.3.2.1 Test Mode 1
        2. 8.3.2.2 Test Mode 2
        3. 8.3.2.3 Test Mode 4
        4. 8.3.2.4 Test Mode 5
    4. 8.4 Device Functional Modes
      1. 8.4.1  Power Down
      2. 8.4.2  Reset
      3. 8.4.3  Standby
      4. 8.4.4  Normal
      5. 8.4.5  Media Dependent Interface
        1. 8.4.5.1 100BASE-T1 Master and 100BASE-T1 Slave Configuration
        2. 8.4.5.2 Auto-Polarity Detection and Correction
        3. 8.4.5.3 Jabber Detection
        4. 8.4.5.4 Interleave Detection
      6. 8.4.6  MAC Interfaces
        1. 8.4.6.1 Media Independent Interface
        2. 8.4.6.2 Reduced Media Independent Interface
        3. 8.4.6.3 Reduced Gigabit Media Independent Interface
      7. 8.4.7  Serial Management Interface
      8. 8.4.8  Direct Register Access
      9. 8.4.9  Extended Register Space Access
      10. 8.4.10 Write Address Operation
        1. 8.4.10.1 MMD1 - Write Address Operation
      11. 8.4.11 Read Address Operation
        1. 8.4.11.1 MMD1 - Read Address Operation
      12. 8.4.12 Write Operation (No Post Increment)
        1. 8.4.12.1 MMD1 - Write Operation (No Post Increment)
      13. 8.4.13 Read Operation (No Post Increment)
        1. 8.4.13.1 MMD1 - Read Operation (No Post Increment)
      14. 8.4.14 Write Operation (Post Increment)
        1. 8.4.14.1 MMD1 - Write Operation (Post Increment)
      15. 8.4.15 Read Operation (Post Increment)
        1. 8.4.15.1 MMD1 - Read Operation (Post Increment)
    5. 8.5 Programming
      1. 8.5.1 Strap Configuration
      2. 8.5.2 LED Configuration
      3. 8.5.3 PHY Address Configuration
    6. 8.6 Register Maps
      1. 8.6.1 Register Access Summary
      2. 8.6.2 DP83TC814 Registers
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Design Requirements
        1. 9.2.1.1 Physical Medium Attachment
          1. 9.2.1.1.1 Common-Mode Choke Recommendations
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Signal Traces
      2. 11.1.2 Return Path
      3. 11.1.3 Metal Pour
      4. 11.1.4 PCB Layer Stacking
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Receiving Notification of Documentation Updates
    2. 12.2 Support Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

12.4 Electrostatic Discharge Caution

GUID-D6F43A01-4379-4BA1-8019-E75693455CED-low.gif This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.