SLVSHE3 June 2024 DRV2911-Q1
PRODUCTION DATA
Because the output stages use N-channel FETs, the device requires a gate-drive voltage higher than the PVDD power supply to enhance the high-side FETs fully. The DRV2911-Q1 integrates a charge-pump circuit that generates a voltage above the PVDD supply for this purpose.
The charge pump requires two external capacitors for operation. See Figure 6-1, Section 4 and Section 6.3 for details on these capacitors.
The charge pump shuts down when RESETZ is low.