SBAS639D October   2017  – June 2024 DRV5055-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Magnetic Characteristics
    7. 5.7 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Magnetic Flux Direction
      2. 6.3.2 Magnetic Response
      3. 6.3.3 Sensitivity Linearity
      4. 6.3.4 Ratiometric Architecture
      5. 6.3.5 Operating VCC Ranges
      6. 6.3.6 Sensitivity Temperature Compensation for Magnets
      7. 6.3.7 Power-On Time
      8. 6.3.8 Hall Element Location
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Selecting the Sensitivity Option
      2. 7.1.2 Temperature Compensation for Magnets
      3. 7.1.3 Adding a Low-Pass Filter
      4. 7.1.4 Designing for Wire Break Detection
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
      3. 7.2.3 Application Curve
    3. 7.3 Best Design Practices
    4. 7.4 Power Supply Recommendations
    5. 7.5 Layout
      1. 7.5.1 Layout Guidelines
      2. 7.5.2 Layout Examples
  9. 8 Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.3.2 Magnetic Response

When the DRV5055-Q1 is powered, the DRV5055-Q1 outputs an analog voltage according to Equation 1:

Equation 1. V O U T = V Q + B × S e n s i t i v i t y ( 25 ° C ) × 1 + S T C × T A - 25 ° C

where

  • VQ is typically half of VCC
  • B is the applied magnetic flux density
  • Sensitivity(25°C) depends on the device option and VCC
  • STC is typically 0.12%/°C for device options DRV5055A1 - DRV5055A4 and is 0%/°C for DRV5055Z2
  • TA is the ambient temperature
  • VOUT is within the VL range

As an example, consider the DRV5055A3 with VCC = 3.3 V, a temperature of 50°C, and 67 mT applied.
Excluding tolerances, VOUT = 1650 mV + 67 mT × (15 mV/mT × (1 + 0.0012/°C × (50°C – 25°C))) = 2685 mV.