SBAS639D October   2017  – June 2024 DRV5055-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Magnetic Characteristics
    7. 5.7 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Magnetic Flux Direction
      2. 6.3.2 Magnetic Response
      3. 6.3.3 Sensitivity Linearity
      4. 6.3.4 Ratiometric Architecture
      5. 6.3.5 Operating VCC Ranges
      6. 6.3.6 Sensitivity Temperature Compensation for Magnets
      7. 6.3.7 Power-On Time
      8. 6.3.8 Hall Element Location
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Selecting the Sensitivity Option
      2. 7.1.2 Temperature Compensation for Magnets
      3. 7.1.3 Adding a Low-Pass Filter
      4. 7.1.4 Designing for Wire Break Detection
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
      3. 7.2.3 Application Curve
    3. 7.3 Best Design Practices
    4. 7.4 Power Supply Recommendations
    5. 7.5 Layout
      1. 7.5.1 Layout Guidelines
      2. 7.5.2 Layout Examples
  9. 8 Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.4 Thermal Information

THERMAL METRIC(1) DRV5055-Q1 UNIT
SOT-23 (DBZ) TO-92 (LPG)
3 PINS 3 PINS
RθJA Junction-to-ambient thermal resistance 170 121 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 66 67 °C/W
RθJB Junction-to-board thermal resistance 49 97 °C/W
YJT Junction-to-top characterization parameter 1.7 7.6 °C/W
YJB Junction-to-board characterization parameter 48 97 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application note.