SLVSG22B January   2023  – March 2024 DRV8145-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
    1. 5.1 HW Variant
      1. 5.1.1 VQFN-HR(16) package
    2. 5.2 SPI Variant
      1. 5.2.1 HTSSOP (28) package
      2. 5.2.2 VQFN-HR(16) package
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
      1. 6.5.1  Power Supply & Initialization
      2. 6.5.2  Logic I/Os
      3. 6.5.3  SPI I/Os
      4. 6.5.4  Configuration Pins - HW Variant Only
      5. 6.5.5  Power FET Parameters
      6. 6.5.6  Switching Parameters with High-Side Recirculation
      7. 6.5.7  Switching Parameters with Low-Side Recirculation
      8. 6.5.8  IPROPI & ITRIP Regulation
      9. 6.5.9  Over Current Protection (OCP)
      10. 6.5.10 Over Temperature Protection (TSD)
      11. 6.5.11 Voltage Monitoring
      12. 6.5.12 Load Monitoring
      13. 6.5.13 Fault Retry Setting
      14. 6.5.14 Transient Thermal Impedance & Current Capability
    6. 6.6 SPI Timing Requirements
    7. 6.7 Switching Waveforms
      1. 6.7.1 Output switching transients
        1. 6.7.1.1 High-Side Recirculation
        2. 6.7.1.2 Low-Side Recirculation
      2. 6.7.2 Wake-up Transients
        1. 6.7.2.1 HW Variant
        2. 6.7.2.2 SPI Variant
      3. 6.7.3 Fault Reaction Transients
        1. 6.7.3.1 Retry setting
        2. 6.7.3.2 Latch setting
    8. 6.8 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
      1. 7.2.1 HW Variant
      2. 7.2.2 SPI Variant
    3. 7.3 Feature Description
      1. 7.3.1 External Components
        1. 7.3.1.1 HW Variant
        2. 7.3.1.2 SPI Variant
      2. 7.3.2 Bridge Control
        1. 7.3.2.1 Register - Pin Control - SPI Variant Only
      3. 7.3.3 Device Configuration
        1. 7.3.3.1 Slew Rate (SR)
        2. 7.3.3.2 IPROPI
        3. 7.3.3.3 ITRIP Regulation
        4. 7.3.3.4 DIAG
          1. 7.3.3.4.1 HW variant
          2. 7.3.3.4.2 SPI variant
      4. 7.3.4 Protection and Diagnostics
        1. 7.3.4.1 Over Current Protection (OCP)
        2. 7.3.4.2 Over Temperature Protection (TSD)
        3. 7.3.4.3 Off-State Diagnostics (OLP)
        4. 7.3.4.4 On-State Diagnostics (OLA) - SPI Variant Only
        5. 7.3.4.5 VM Over Voltage Monitor
        6. 7.3.4.6 VM Under Voltage Monitor
        7. 7.3.4.7 Charge pump under voltage monitor
        8. 7.3.4.8 Power On Reset (POR)
        9. 7.3.4.9 Event Priority
    4. 7.4 Programming - SPI Variant Only
      1. 7.4.1 SPI Interface
      2. 7.4.2 Standard Frame
      3. 7.4.3 SPI Interface for Multiple Peripherals
        1. 7.4.3.1 Daisy Chain Frame for Multiple Peripherals
  9. 8 Register Map - SPI Variant Only
    1. 8.1 User Registers
  10. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Load Summary
    2. 9.2 Typical Application
      1. 9.2.1 HW Variant
      2. 9.2.2 SPI Variant
    3. 9.3 Power Supply Recommendations
      1. 9.3.1 Bulk Capacitance Sizing
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Community Resources
    4. 10.4 Trademarks
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.5.5 Power FET Parameters

Measured at VVM = 13.5 V

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
RHS_ON High-side FET on resistance, HTSSOP package IOUT = 18 A, TJ = 25°C 9.5 mΩ
IOUT = 18 A, TJ = 150°C 19 mΩ
High-side FET on resistance, VQFN-HR package IOUT = 18 A, TJ = 25°C 8 mΩ
IOUT = 18 A, TJ = 150°C 15.2 mΩ
RLS_ON Low-side FET on resistance, HTSSOP package IOUT = 18 A, TJ = 25°C 9.5 mΩ
IOUT = 18 A, TJ = 150°C 19 mΩ
Low-side FET on resistance, VQFN-HR package IOUT = 18 A, TJ = 25°C 8 mΩ
IOUT = 18 A, TJ = 150°C 15.2 mΩ
VSD Low-side & High-side FET source-drain voltage when body diode is forward biased IOUT = +/- 18 A (both directions) 0.4 0.9 1.5 V
RHi-Z OUT resistance to GND in SLEEP or STANDBY state VOUTx = VVM = 13.5 V 0.4 23 KΩ