SLVSG22B January   2023  – March 2024 DRV8145-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
    1. 5.1 HW Variant
      1. 5.1.1 VQFN-HR(16) package
    2. 5.2 SPI Variant
      1. 5.2.1 HTSSOP (28) package
      2. 5.2.2 VQFN-HR(16) package
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
      1. 6.5.1  Power Supply & Initialization
      2. 6.5.2  Logic I/Os
      3. 6.5.3  SPI I/Os
      4. 6.5.4  Configuration Pins - HW Variant Only
      5. 6.5.5  Power FET Parameters
      6. 6.5.6  Switching Parameters with High-Side Recirculation
      7. 6.5.7  Switching Parameters with Low-Side Recirculation
      8. 6.5.8  IPROPI & ITRIP Regulation
      9. 6.5.9  Over Current Protection (OCP)
      10. 6.5.10 Over Temperature Protection (TSD)
      11. 6.5.11 Voltage Monitoring
      12. 6.5.12 Load Monitoring
      13. 6.5.13 Fault Retry Setting
      14. 6.5.14 Transient Thermal Impedance & Current Capability
    6. 6.6 SPI Timing Requirements
    7. 6.7 Switching Waveforms
      1. 6.7.1 Output switching transients
        1. 6.7.1.1 High-Side Recirculation
        2. 6.7.1.2 Low-Side Recirculation
      2. 6.7.2 Wake-up Transients
        1. 6.7.2.1 HW Variant
        2. 6.7.2.2 SPI Variant
      3. 6.7.3 Fault Reaction Transients
        1. 6.7.3.1 Retry setting
        2. 6.7.3.2 Latch setting
    8. 6.8 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
      1. 7.2.1 HW Variant
      2. 7.2.2 SPI Variant
    3. 7.3 Feature Description
      1. 7.3.1 External Components
        1. 7.3.1.1 HW Variant
        2. 7.3.1.2 SPI Variant
      2. 7.3.2 Bridge Control
        1. 7.3.2.1 Register - Pin Control - SPI Variant Only
      3. 7.3.3 Device Configuration
        1. 7.3.3.1 Slew Rate (SR)
        2. 7.3.3.2 IPROPI
        3. 7.3.3.3 ITRIP Regulation
        4. 7.3.3.4 DIAG
          1. 7.3.3.4.1 HW variant
          2. 7.3.3.4.2 SPI variant
      4. 7.3.4 Protection and Diagnostics
        1. 7.3.4.1 Over Current Protection (OCP)
        2. 7.3.4.2 Over Temperature Protection (TSD)
        3. 7.3.4.3 Off-State Diagnostics (OLP)
        4. 7.3.4.4 On-State Diagnostics (OLA) - SPI Variant Only
        5. 7.3.4.5 VM Over Voltage Monitor
        6. 7.3.4.6 VM Under Voltage Monitor
        7. 7.3.4.7 Charge pump under voltage monitor
        8. 7.3.4.8 Power On Reset (POR)
        9. 7.3.4.9 Event Priority
    4. 7.4 Programming - SPI Variant Only
      1. 7.4.1 SPI Interface
      2. 7.4.2 Standard Frame
      3. 7.4.3 SPI Interface for Multiple Peripherals
        1. 7.4.3.1 Daisy Chain Frame for Multiple Peripherals
  9. 8 Register Map - SPI Variant Only
    1. 8.1 User Registers
  10. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Load Summary
    2. 9.2 Typical Application
      1. 9.2.1 HW Variant
      2. 9.2.2 SPI Variant
    3. 9.3 Power Supply Recommendations
      1. 9.3.1 Bulk Capacitance Sizing
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Community Resources
    4. 10.4 Trademarks
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.5.14 Transient Thermal Impedance & Current Capability

Information based on thermal simulations

Table 6-1 Transient Thermal Impedance (RθJA) and Current Capability - half-bridge
PART NUMBER PACKAGE RθJA [°C/W](1) Current [A](3)
without PWM(3) with PWM(4)
0.1 sec 1 sec 10 sec DC 0.1 sec 1 sec 10 sec DC 10 sec DC
DRV8145-Q1 VQFN-HR 3.8 8.8 13.1 29.7 33.5 22.0 18.1 12.0 13.6 7.9
DRV8145-Q1 HTSSOP 2.6 6.5 11.5 28.3 36.3 22.9 17.2 11.0 13.6 7.6
(1) Based on thermal simulations using 40 mm x 40 mm x 1.6 mm 4 layer PCB – 2 oz Cu on top and bottom layers, 1 oz Cu on internal planes with 0.3 mm thermal via drill diameter, 0.025 mm Cu plating, 1 minimum mm via pitch.
(3) Estimated transient current capability at 85 °C ambient temperature for junction temperature rise up to 150°C
(3) Only conduction losses (I2R) considered
(4) Switching loss roughly estimated by the following equation:
Equation 1. PSW = VVM x ILoad x fPWM x VVM/SR, where VVM = 13.5 V, fPWM = 20 KHz, SR = 23 V/µs