Minimize length and impedance of GH, SH, GL, and SL traces. Use as few vias as
possible to minimize parasitic inductance. It is also recommended to increase
these trace widths shortly after routing away from the device pin to minimize
parasitic resistance.
Keep bootstrap capacitor CBST close to their respective pins
Keep GVDD capacitors close to GVDD pin
Keep VDRAIN capacitor close to VDRAIN pin to supply steady switching current for
the charge pump.
Additional bulk capacitance is required to bypass the high current path on the
external MOSFETs. This bulk capacitance should be placed such that it minimizes
the length of any high current paths through the external MOSFETs. The
connecting metal traces should be as wide as possible, with numerous vias
connecting PCB layers. These practices minimize inductance and let the bulk
capacitor deliver high current.
Connect SL pin to MOSFET source, not directly to GND, for accurate VDS
detection.
DRV8161 only: Route SN/SP pins in
parallel from the sense resistor to the device. Place filtering components close
to the device pins to minimize post-filter noise coupling. Ensure that SN/SP
stay separated from GND plane to achieve best CSA accuracy.
The hardware interface resistors
RIDRIVE1, RIDRIVE2, RVDSLVL,
RDTMODE, and RCSAGAIN should be placed as close as
possible to the device pins.
Minimize parallel routing to reduce noise coupling from potential noise source
into any noise-sensitive device signals. The noise-sensitive signals include the
multilevel hardware interface pins IDRIVE1, IDRIVE2, VDSLVL, DTMODE and CSAGAIN
as well as the current sense amplifier output SO.