SLOS846C September   2013  – December 2016 DRV8303

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Current Shunt Amplifier Characteristics
    7. 6.7 SPI Characteristics (Slave Mode Only)
    8. 6.8 Gate Timing and Protection Switching Characteristics
    9. 6.9 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Three-Phase Gate Driver
      2. 7.3.2 Current Shunt Amplifiers
      3. 7.3.3 Protection Features
        1. 7.3.3.1 Power Stage Protection
        2. 7.3.3.2 Overcurrent Protection (OCP) and Reporting
        3. 7.3.3.3 Undervoltage Protection (UVLO)
        4. 7.3.3.4 Overvoltage Protection (GVDD_OV)
        5. 7.3.3.5 Overtemperature Protection
        6. 7.3.3.6 Fault and Protection Handling
      4. 7.3.4 Start-Up and Shutdown Sequence Control
    4. 7.4 Device Functional Modes
      1. 7.4.1 EN_GATE
      2. 7.4.2 DTC
      3. 7.4.3 VDD_SPI
      4. 7.4.4 DC_CAL
    5. 7.5 Programming
      1. 7.5.1 SPI Communication
        1. 7.5.1.1 SPI
        2. 7.5.1.2 SPI Format
    6. 7.6 Register Maps
      1. 7.6.1 Read / Write Bit
      2. 7.6.2 Address Bits
      3. 7.6.3 SPI Data Bits
        1. 7.6.3.1 Status Registers
        2. 7.6.3.2 Control Registers
        3. 7.6.3.3 Overcurrent Adjustment
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Gate Driver Power-Up Sequencing Errata
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Gate Drive Average Current Load
        2. 8.2.2.2 Overcurrent Protection Setup
        3. 8.2.2.3 Sense Amplifier Setup
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
    1. 9.1 Bulk Capacitance
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

11 Device and Documentation Support

11.1 Documentation Support

11.1.1 Related Documentation

For related documentation see the following:

11.2 Receiving Notification of Documentation Updates

To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document.

11.3 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.

    TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
    Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.

11.4 Trademarks

E2E is a trademark of Texas Instruments.

All other trademarks are the property of their respective owners.

11.5 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

11.6 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.