SLVSD12D May 2015 – July 2019 DRV8305-Q1
PRODUCTION DATA.
The rise and fall times of the external power MOSFET can be adjusted through the use of the DRV8305-Q1 IDRIVE setting. A higher IDRIVE setting will charge the MOSFET gate more rapidly where a lower IDRIVE setting will charge the MOSFET gate more slowly. System testing requires fine tuning to the desired slew rate, but a rough first-order approximation can be calculated as shown in the following.
Example: 9 nC (QGD) / 50 mA (IDRIVEP) = 180 ns