SLLSFB6B May   2020  – May 2024 DRV8705-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Descriptions
  5.   Device Comparison Table
  6. 4 Pin Configuration
  7. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Timing Requirements
    7. 5.7 Timing Diagrams
    8. 5.8 Typical Characteristics
  8. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 External Components
      2. 6.3.2 Device Interface Variants
        1. 6.3.2.1 Serial Peripheral Interface (SPI)
        2. 6.3.2.2 Hardware (H/W)
      3. 6.3.3 Input PWM Modes
        1. 6.3.3.1 Half-Bridge Control
        2. 6.3.3.2 H-Bridge Control
        3. 6.3.3.3 Split HS and LS Solenoid Control
      4. 6.3.4 Smart Gate Driver
        1. 6.3.4.1 Functional Block Diagram
        2. 6.3.4.2 Slew Rate Control (IDRIVE)
        3. 6.3.4.3 Gate Drive State Machine (TDRIVE)
      5. 6.3.5 Doubler (Single-Stage) Charge Pump
      6. 6.3.6 Low-Side Differential Current Shunt Amplifier
      7. 6.3.7 Pin Diagrams
        1. 6.3.7.1 Logic Level Input Pin (DRVOFF, IN1/EN, IN2/PH, nHIZx, nSLEEP, nSCS, SCLK, SDI)
        2. 6.3.7.2 Logic Level Push Pull Output (SDO)
        3. 6.3.7.3 Logic Level Open Drain Output (nFAULT)
        4. 6.3.7.4 Quad-Level Input (GAIN)
        5. 6.3.7.5 Six-Level Input (IDRIVE, VDS)
      8. 6.3.8 Protection and Diagnostics
        1. 6.3.8.1  Gate Driver Disable and Enable (DRVOFF and EN_DRV)
        2. 6.3.8.2  Fault Reset (CLR_FLT)
        3. 6.3.8.3  DVDD Logic Supply Power on Reset (DVDD_POR)
        4. 6.3.8.4  PVDD Supply Undervoltage Monitor (PVDD_UV)
        5. 6.3.8.5  PVDD Supply Overvoltage Monitor (PVDD_OV)
        6. 6.3.8.6  VCP Charge Pump Undervoltage Lockout (VCP_UV)
        7. 6.3.8.7  MOSFET VDS Overcurrent Protection (VDS_OCP)
        8. 6.3.8.8  Gate Driver Fault (VGS_GDF)
        9. 6.3.8.9  Thermal Warning (OTW)
        10. 6.3.8.10 Thermal Shutdown (OTSD)
        11. 6.3.8.11 Offline Short Circuit and Open Load Detection (OOL and OSC)
        12. 6.3.8.12 Fault Detection and Response Summary Table
    4. 6.4 Device Function Modes
      1. 6.4.1 Inactive or Sleep State
      2. 6.4.2 Standby State
      3. 6.4.3 Operating State
    5. 6.5 Programming
      1. 6.5.1 SPI Interface
      2. 6.5.2 SPI Format
      3. 6.5.3 SPI Interface for Multiple Slaves
        1. 6.5.3.1 SPI Interface for Multiple Slaves in Daisy Chain
  9. 7 Register Maps
    1. 7.1 STATUS Registers
    2. 7.2 CONTROL Registers
  10. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Gate Driver Configuration
          1. 8.2.2.1.1 VCP Load Calculation Example
          2. 8.2.2.1.2 IDRIVE Calculation Example
        2. 8.2.2.2 Current Shunt Amplifier Configuration
        3. 8.2.2.3 Power Dissipation
  11. 9 Power Supply Recommendations
    1. 9.1 Bulk Capacitance
  12. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  13. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
      2. 11.1.2 Receiving Notification of Documentation Updates
    2. 11.2 Support Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  14. 12Revision History
  15. 13Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • RHB|32
Thermal pad, mechanical data (Package|Pins)
Orderable Information

10.1 Layout Guidelines

Bypass the PVDD pin to the GND pin using a low-ESR ceramic bypass capacitor with a recommended value of 0.1 µF. Place this capacitor as close to the PVDD pin as possible with a thick trace or ground plane connected to the GND pin. Additionally, bypass the PVDD pin using a bulk capacitor rated for VM. This component can be electrolytic. This capacitance must be at least 10 µF. It is acceptable if this capacitance is shared with the bulk capacitance for the external power MOSFETs.

Additional bulk capacitance is required to bypass the high current path on the external MOSFETs. This bulk capacitance should be placed such that it minimizes the length of any high current paths through the external MOSFETs. The connecting metal traces should be as wide as possible, with numerous vias connecting PCB layers. These practices minimize inductance and allow the bulk capacitor to deliver high current.

Place a low-ESR ceramic capacitor between the CPL and CPH pins. This capacitor should be 0.1 µF, rated for PVDD, and be of type X5R or X7R. Additionally, place a low-ESR ceramic capacitor between the VCP and PVDD pins. This capacitor should be 1 µF, rated for 16 V, and be of type X5R or X7R.

Bypass the DVDD pin to the GND pin with a 1.0 µF low-ESR ceramic capacitor rated for 6.3 V and of type X5R or X7R. Place this capacitor as close to the pin as possible and minimize the path from the capacitor to the GND pin. If another bypass capacitor is within close proximity of the device for the external low voltage power supply and noise on the power supply is minimal, it is optional to remove this component.

Bypass the AREF pin to the GND pin with a 0.1 µF low-ESR ceramic capacitor rated for 6.3 V and of type X5R or X7R. Place this capacitor as close to the pin as possible and minimize the path from the capacitor to the GND pin. If another bypass capacitor is within close proximity of the device for the external low voltage power supply and noise on the power supply is minimal, it is optional to remove this component.

The DRAIN pin can be shorted directly to the PVDD pin. However, if a significant distance is between the device and the external MOSFETs, use a dedicated trace to connect to the common point of the drains of the high-side external MOSFETs. Do not connect the SLx pins directly to the GND plane. Instead, use dedicated traces to connect these pins to the sources of the low-side external MOSFETs. These recommendations allow for more accurate VDS sensing of the external MOSFETs for overcurrent detection.

Minimize the loop length for the high-side and low-side gate drivers. The high-side loop is from the GHx pin of the device to the high-side power MOSFET gate, then follows the high-side MOSFET source back to the SHx pin. The low-side loop is from the GLx pin of the device to the low-side power MOSFET gate, then follows the low-side MOSFET source back to the SLx pin.