Product details

Number of full bridges 1 Vs (min) (V) 4.5 Vs ABS (max) (V) 40 Sleep current (µA) 2.5 Control mode Independent 1/2-Bridge, PH/EN, PWM Control interface Hardware (GPIO), SPI Features Current sense Amplifier, Smart Gate Drive Rating Automotive TI functional safety category Functional Safety-Capable Operating temperature range (°C) -40 to 125
Number of full bridges 1 Vs (min) (V) 4.5 Vs ABS (max) (V) 40 Sleep current (µA) 2.5 Control mode Independent 1/2-Bridge, PH/EN, PWM Control interface Hardware (GPIO), SPI Features Current sense Amplifier, Smart Gate Drive Rating Automotive TI functional safety category Functional Safety-Capable Operating temperature range (°C) -40 to 125
VQFN (RHB) 32 25 mm² 5 x 5
  • AEC-Q100 qualified for automotive applications:
    • Temperature grade 1: –40°C to +125°C, TA
  • Functional Safety-Capable
  • H-bridge smart gate driver
    • 4.9V to 37V (40V abs. max) operating range
    • Doubler charge pump for 100% PWM
    • Half-bridge and H-bridge control modes
  • Pin to pin gate driver variants
  • Smart gate drive architecture
    • Adjustable slew rate control
    • 0.5mA to 62mA peak source current output
    • 0.5mA to 62mA peak sink current output
    • Integrated dead-time handshaking
  • Low-side current shunt amplifier
    • Adjustable gain settings (10, 20, 40, 80V/V)
    • Integrated feedback resistors
    • Adjustable PWM blanking scheme
  • Multiple interface options available
    • SPI: Detailed configuration and diagnostics
    • H/W: Simplified control and less MCU pins
  • Spread spectrum clocking for EMI reduction
  • Compact VQFN package with wettable flanks
  • Integrated protection features
    • Dedicated driver disable pin (DRVOFF)
    • Supply and regulator voltage monitors
    • MOSFET VDS overcurrent monitors
    • MOSFET VGS gate fault monitors
    • Charge pump for reverse polarity MOSFET
    • Offline open load and short circuit diagnostics
    • Device thermal warning and shutdown
    • Fault condition interrupt pin (nFAULT)
  • AEC-Q100 qualified for automotive applications:
    • Temperature grade 1: –40°C to +125°C, TA
  • Functional Safety-Capable
  • H-bridge smart gate driver
    • 4.9V to 37V (40V abs. max) operating range
    • Doubler charge pump for 100% PWM
    • Half-bridge and H-bridge control modes
  • Pin to pin gate driver variants
  • Smart gate drive architecture
    • Adjustable slew rate control
    • 0.5mA to 62mA peak source current output
    • 0.5mA to 62mA peak sink current output
    • Integrated dead-time handshaking
  • Low-side current shunt amplifier
    • Adjustable gain settings (10, 20, 40, 80V/V)
    • Integrated feedback resistors
    • Adjustable PWM blanking scheme
  • Multiple interface options available
    • SPI: Detailed configuration and diagnostics
    • H/W: Simplified control and less MCU pins
  • Spread spectrum clocking for EMI reduction
  • Compact VQFN package with wettable flanks
  • Integrated protection features
    • Dedicated driver disable pin (DRVOFF)
    • Supply and regulator voltage monitors
    • MOSFET VDS overcurrent monitors
    • MOSFET VGS gate fault monitors
    • Charge pump for reverse polarity MOSFET
    • Offline open load and short circuit diagnostics
    • Device thermal warning and shutdown
    • Fault condition interrupt pin (nFAULT)

The DRV8705-Q1 is a highly integrated H-bridge gate driver, capable of driving high-side and low-side N-channel power MOSFETs. It generates the proper gate drive voltages using an integrated doubler charge pump for the high-side and a linear regulator for the low-side.

The device uses a smart gate drive architecture to reduce system cost and improve reliability. The gate driver optimizes dead time to avoid shoot-through conditions, provides control to decreasing electromagnetic interference (EMI) through adjustable gate drive current, and protects against drain to source and gate short conditions with VDS and VGS monitors.

A low-side shunt amplifier allows for current sensing in order to measure motor current and provide feedback to the external controller for current limiting or stall detection.

The DRV8705-Q1 provide an array of protection features to ensure robust system operation. These include under and overvoltage monitors for the power supply and charge pump, VDS overcurrent and VGS gate fault monitors for the external MOSFETs, offline open load and short circuit diagnostics, and internal thermal warning and shutdown protection.

The DRV8705-Q1 is a highly integrated H-bridge gate driver, capable of driving high-side and low-side N-channel power MOSFETs. It generates the proper gate drive voltages using an integrated doubler charge pump for the high-side and a linear regulator for the low-side.

The device uses a smart gate drive architecture to reduce system cost and improve reliability. The gate driver optimizes dead time to avoid shoot-through conditions, provides control to decreasing electromagnetic interference (EMI) through adjustable gate drive current, and protects against drain to source and gate short conditions with VDS and VGS monitors.

A low-side shunt amplifier allows for current sensing in order to measure motor current and provide feedback to the external controller for current limiting or stall detection.

The DRV8705-Q1 provide an array of protection features to ensure robust system operation. These include under and overvoltage monitors for the power supply and charge pump, VDS overcurrent and VGS gate fault monitors for the external MOSFETs, offline open load and short circuit diagnostics, and internal thermal warning and shutdown protection.

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Design & development

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Evaluation board

DRV8705H-Q1EVM — Automotive H-bridge smart gate driver EVM with low-side current sense amplifier

The DRV8705H-Q1EVM is designed to evaluate the DRV8705H-Q1, which is an integrated, automotive qualified brushed DC motor driver. The DRV8705H-Q1 is a highly integrated H-bridge gate driver, capable of driving high-side and low-side N-channel power MOSFETs. It generates the proper gate drive (...)

User guide: PDF
Not available on TI.com
Evaluation board

DRV8705S-Q1EVM — Automotive H-bridge smart gate driver EVM with low-side current sense amplifier

The DRV8705S-Q1EVM is designed to evaluate the DRV8705H-Q1, which is an integrated, automotive qualified brushed DC motor driver. The DRV8705S-Q1 is a highly integrated H-bridge gate driver, capable of driving high-side and low-side N-channel power MOSFETs. It generates the proper gate drive (...)

User guide: PDF
Simulation model

DRV8701E Transient Simulation Model (Rev. A)

SLVMAR3A.ZIP (90 KB) - PSpice Model
Package Pins CAD symbols, footprints & 3D models
VQFN (RHB) 32 Ultra Librarian

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