SLVSAC0F May   2010  – December 2015 DRV8841

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 PWM Motor Drivers
      2. 7.3.2 Blanking Time
      3. 7.3.3 Bridge Control
      4. 7.3.4 Current Regulation
      5. 7.3.5 Decay Mode
      6. 7.3.6 Protection Circuits
        1. 7.3.6.1 Overcurrent Protection (OCP)
        2. 7.3.6.2 Thermal Shutdown (TSD)
        3. 7.3.6.3 Undervoltage Lockout (UVLO)
    4. 7.4 Device Functional Modes
      1. 7.4.1 nRESET and nSLEEP Operation
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Current Regulation
        2. 8.2.2.2 Decay Modes
        3. 8.2.2.3 Sense Resistor
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
    1. 9.1 Bulk Capacitance
    2. 9.2 Power Supply and Logic Sequencing
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Considerations
      1. 10.3.1 Power Dissipation
      2. 10.3.2 Heatsinking
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
VMx Power supply voltage –0.3 47 V
Power supply ramp rate 1 V/µs
Digital pin voltage –0.5 7 V
VREF Input voltage –0.3 4 V
ISENSEx pin voltage(2) –0.8 0.8 V
Peak motor drive output current, t < 1 μS Internally limited A
Continuous motor drive output current(3) 0 2.5 A
Continuous total power dissipation See Thermal Information
TJ Operating virtual junction temperature –40 150 °C
TA Operating ambient temperature –40 85 °C
Tstg Storage temperature –60 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Transients of ±1 V for less than 25 ns are acceptable.
(3) Power dissipation and thermal limits must be observed.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) ±2000 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VM Motor power supply voltage(1) 8.2 45 V
VREF VREF input voltage(2) 1 3.5 V
IV3P3 V3P3OUT load current 0 1 mA
fPWM Externally applied PWM frequency 0 100 kHz
(1) All VM pins must be connected to the same supply voltage.
(2) Operational at VREF from 0 V to 1 V, but accuracy is degraded.

6.4 Thermal Information

THERMAL METRIC(1) DRV8841 UNIT
PWP (HTSSOP)
28 PINS
RθJA Junction-to-ambient thermal resistance 31.6 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 15.9 °C/W
RθJB Junction-to-board thermal resistance 5.6 °C/W
ψJT Junction-to-top characterization parameter 0.2 °C/W
ψJB Junction-to-board characterization parameter 5.5 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 1.4 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER SUPPLIES
IVM VM operating supply current VM = 24 V, fPWM < 50 kHz 5 8 mA
IVMQ VM sleep mode supply current VM = 24 V 10 20 μA
VUVLO VM undervoltage lockout voltage VM rising 7.8 8.2 V
V3P3OUT REGULATOR
V3P3 V3P3OUT voltage IOUT = 0 to 1 mA 3.2 3.3 3.4 V
LOGIC-LEVEL INPUTS
VIL Input low voltage 0.6 0.7 V
VIH Input high voltage 2.2 5.25 V
VHYS Input hysteresis 0.3 0.45 0.6 V
IIL Input low current VIN = 0 –20 20 μA
IIH Input high current VIN = 3.3 V 100 μA
RPD Internal pulldown resistance 100 kΩ
nFAULT OUTPUT (OPEN-DRAIN OUTPUT)
VOL Output low voltage IO = 5 mA 0.5 V
IOH Output high leakage current VO = 3.3 V 1 μA
DECAY INPUT
VIL Input low threshold voltage For slow decay (brake) mode 0 0.8 V
VIH Input high threshold voltage For fast decay (coast) mode 2 V
IIN Input current ±40 μA
RPU Internal pullup resistance 130 kΩ
RPD Internal pulldown resistance 80 kΩ
H-BRIDGE FETS
RDS(ON) HS FET on resistance VM = 24 V, IO = 1 A, TJ = 25°C 0.2 Ω
VM = 24 V, IO = 1 A, TJ = 85°C 0.25 0.32
RDS(ON) LS FET on resistance VM = 24 V, IO = 1 A, TJ = 25°C 0.2 Ω
VM = 24 V, IO = 1 A, TJ = 85°C 0.25 0.32
IOFF Off-state leakage current –20 20 μA
MOTOR DRIVER
fPWM Internal current control PWM frequency 50 kHz
tBLANK Current sense blanking time 3.75 μs
tR Rise time 30 200 ns
tF Fall time 30 200 ns
PROTECTION CIRCUITS
IOCP Overcurrent protection trip level 3 A
tTSD Thermal shutdown temperature Die temperature 150 160 180 °C
CURRENT CONTROL
IREF VREF input current VREF = 3.3 V –3 3 μA
VTRIP xISENSE trip voltage xVREF = 3.3 V, 100% current setting 635 660 685 mV
xVREF = 3.3 V, 71% current setting 445 469 492
xVREF = 3.3 V, 38% current setting 225 251 276
AISENSE Current sense amplifier gain Reference only 5 V/V

6.6 Typical Characteristics

DRV8841 D001_SLVSA73.gif
Figure 1. IVMx vs V(VMx)
DRV8841 D003_SLVSA73.gif
Figure 3. RDS(ON) vs V(VMx)
DRV8841 D002_SLVSA73.gif
Figure 2. IVMxQ vs V(VMx)
DRV8841 D004_SLVSA73.gif
Figure 4. RDS(ON) vs Temperature