SLVSHN2 July 2024 DRV8962-Q1
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
POWER SUPPLIES (VM, DVDD) | ||||||
IVM | VM operating supply current | nSLEEP = 1, No load, VCC = External 5 V | 4 | 7 | mA | |
nSLEEP = 1, No load, VCC = DVDD | 6 | 9 | ||||
IVMQ | VM sleep mode supply current | nSLEEP = 0 | 3 | 8 | μA | |
tSLEEP | Sleep time | nSLEEP = 0 to sleep-mode | 120 | μs | ||
tRESET | nSLEEP reset pulse | nSLEEP low to clear fault | 20 | 40 | μs | |
tWAKE | Wake-up time | nSLEEP = 1 to output transition | 0.85 | 1.2 | ms | |
tON | Turn-on time | VM > UVLO to output transition | 0.85 | 1.3 | ms | |
VDVDD | Internal regulator voltage | No external load, 6 V < VVM < 60 V | 4.75 | 5 | 5.25 | V |
No external load, VVM = 4.5 V | 4.35 | 4.45 | V | |||
CHARGE PUMP (VCP, CPH, CPL) | ||||||
VVCP | VCP operating voltage | 6 V < VVM < 60 V | VVM + 5 | V | ||
f(VCP) | Charge pump switching frequency | VVM > UVLO; nSLEEP = 1 | 360 | kHz | ||
LOGIC-LEVEL INPUTS (IN1, IN2, IN3, IN4, EN1, EN2, EN3, EN4, MODE, OCPM, nSLEEP) | ||||||
VIL | Input logic-low voltage | 0 | 0.6 | V | ||
VIH | Input logic-high voltage | 1.5 | 5.5 | V | ||
VHYS | Input logic hysteresis (all pins except nSLEEP) | 100 | mV | |||
VHYS_nSLEEP | nSLEEP logic hysteresis | 300 | mV | |||
IIL | Input logic-low current | VIN = 0 V | –1 | 1 | μA | |
IIH | Input logic-high current | VIN = DVDD | 50 | μA | ||
t1 | ENx high to OUTx high delay | INx = 1 | 2 | μs | ||
t2 | ENx low to OUTx low delay | INx = 1 | 2 | μs | ||
t3 | ENx high to OUTx low delay | INx = 0 | 2 | μs | ||
t4 | ENx low to OUTx high delay | INx = 0 | 2 | μs | ||
t5 | INx high to OUTx high delay | 600 | ns | |||
t6 | INx low to OUTx low delay | 600 | ns | |||
CONTROL OUTPUTS (nFAULT) | ||||||
VOL | Output logic-low voltage | IO = 5 mA | 0.35 | V | ||
IOH | Output logic-high leakage | –1 | 1 | μA | ||
MOTOR DRIVER OUTPUTS (OUT1, OUT2, OUT3, OUT4) | ||||||
RDS(ONH) | High-side FET on resistance | TJ = 25 °C, IO = -5 A | 53 | 62 | mΩ | |
TJ = 125 °C, IO = -5 A | 70 | 101 | mΩ | |||
TJ = 150 °C, IO = -5 A | 80 | 112 | mΩ | |||
RDS(ONL) | Low-side FET on resistance | TJ = 25 °C, IO = 5 A | 53 | 62 | mΩ | |
TJ = 125 °C, IO = 5 A | 70 | 101 | mΩ | |||
TJ = 150 °C, IO = 5 A | 80 | 112 | mΩ | |||
tRF | Output rise/fall time | IO = 5 A, MODE = 1, between 10% and 90% | 70 | ns | ||
IO = 5 A, MODE = 0, between 10% and 90% | 140 | ns | ||||
tD | Output dead time | VM = 24 V, IO = 5 A | 300 | ns | ||
CURRENT SENSE AND REGULATION (IPROPI, VREF) | ||||||
AIPROPI | Current mirror gain | 212 | μA/A | |||
AERR | Current mirror scaling error | 10% to 20% rated current | -8 | 8 | % | |
20% to 40% rated current | -5 | 5 | ||||
40% to 100% rated current | -3.5 | 3.5 | ||||
IVREF | VREF Leakage Current | VREF = 3.3 V | 50 | nA | ||
tOFF | PWM off-time | 17 | μs | |||
tDEG | Current regulation deglitch time | 0.5 | μs | |||
tBLK | Current Regulation Blanking time | 1.5 | μs | |||
tDELAY | Current sense delay time | 2 | μs | |||
PROTECTION CIRCUITS | ||||||
VUVLO | VM UVLO lockout | VM falling | 4.1 | 4.23 | 4.35 | V |
VM rising | 4.2 | 4.35 | 4.46 | |||
VCCUVLO | VCC UVLO lockout | VCC falling | 2.7 | 2.8 | 2.9 | V |
VCC rising | 2.8 | 2.92 | 3.05 | |||
VUVLO,HYS | Undervoltage hysteresis | Rising to falling threshold | 120 | mV | ||
VCPUV | Charge pump undervoltage | VCP falling | VVM + 2 | V | ||
IOCP | Overcurrent protection | Current through any FET | 8 | A | ||
tOCP | Overcurrent detection delay | 2.2 | μs | |||
tRETRY | Overcurrent retry time | 4.1 | ms | |||
TOTSD | Thermal shutdown | Die temperature TJ | 150 | 165 | 180 | °C |
THYS_OTSD | Thermal shutdown hysteresis | Die temperature TJ | 20 | °C |