SNLS430C October   2012  – August 2014 DS125BR111

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Simplified Schematic
  5. 5 Revision History
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 Handling Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Electrical Characteristics — Serial Management Bus Interface
    7. 7.7 Timing Requirements
    8. 7.8 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
      1. 8.2.1 Functional Datapath Blocks
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
      1. 8.4.1 Pin Control Mode
      2. 8.4.2 SMBus Mode
      3. 8.4.3 Signal Conditioning Settings
    5. 8.5 Programming
    6. 8.6 Register Maps
      1. 8.6.1 Transfer Of Data Via The SMBus
      2. 8.6.2 SMBus Transactions
      3. 8.6.3 Writing a Register
      4. 8.6.4 Reading a Register
      5. 8.6.5 SMBus Register Information
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Signal Integrity
      2. 9.1.2 RX-Detect in SAS/SATA Applications
      3. 9.1.3 PCIe Applications
        1. 9.1.3.1 RXDET When Using SMBus Modes
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Trademarks
    2. 12.2 Electrostatic Discharge Caution
    3. 12.3 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

12 Device and Documentation Support

12.1 Trademarks

All other trademarks are the property of their respective owners.

12.2 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

12.3 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.