SLVSH12 November   2022 ESD2CANFD24

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings—JEDEC Specification
    3. 6.3 ESD Ratings—IEC Specification
    4. 6.4 Recommended Operating Conditions
    5. 6.5 Thermal Information
    6. 6.6 Electrical Characteristics
    7. 6.7 Typical Characteristics – ESD2CANFD24
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Temperature Range
      2. 7.3.2 IEC 61000-4-2 ESD Protection
      3. 7.3.3 IEC 61000-4-5 Surge Protection
      4. 7.3.4 IO Capacitance
      5. 7.3.5 Dynamic Resistance
      6. 7.3.6 DC Breakdown Voltage
      7. 7.3.7 Ultra Low Leakage Current
      8. 7.3.8 Clamping Voltage
      9. 7.3.9 Industry Standard Leaded Packages
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.6 Electrical Characteristics

over TA = 25°C (unless otherwise noted)(1)
PARAMETER TEST CONDITIONS DEVICE MIN TYP MAX UNIT
VRWM Reverse stand-off voltage ESD2CANFD24 –24 24 V
VBRF Breakdown voltage(2) IIO = 10 mA, IO to GND ESD2CANFD24 25.5 35.5 V
VBRR Breakdown voltage(2) IIO = –10 mA, IO to GND ESD2CANFD24 –35.5 –25.5 V
VCLAMP Clamping voltage(3) IPP = 3.5 A, tp = 8/20 µs, IO to GND ESD2CANFD24 37 V
VCLAMP Clamping voltage(4) IPP = 16 A, TLP, IO to GND or GND to IO ESD2CANFD24 36 V
ILEAK Leakage current VIO = ±24 V, IO to GND ESD2CANFD24 -50 5 50 nA
RDYN Dynamic resistance(4) IO to GND or GND to IO ESD2CANFD24 0.45 Ω
CL Line capacitance(6) VIO = 0 V, f = 1 MHz, Vpp = 30 mV ESD2CANFD24 2.5 4.2 pF
VHold Holding voltage after snapback TLP ESD2CANFD24 30 V
(1) Measurements made on each IO channel
(2) VBRF and VBRR are defined as the voltage when ±10 mA is applied in the positive and negative going direction respectively, before the device latches into the snapback state
(3) Device stressed with 8/20 μs exponential decay waveform according to IEC 61000-4-5
(4) Non-repetitive current pulse, Transmission Line Pulse (TLP); square pulse; ANSI / ESD STM5.5.1-2008
(5) Measured from IO to GND on each channel