SBOS381E February   2007  – January 2018 INA270 , INA271

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
    1.     Device Images
      1.      Simplified Schematic
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
    1.     Pin Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Basic Connection
      2. 8.3.2 Selecting RS
      3. 8.3.3 Transient Protection
    4. 8.4 Device Functional Modes
      1. 8.4.1 First- or Second-Order Filtering
      2. 8.4.2 Accuracy Variations as a Result of VSENSE and Common-Mode Voltage
        1. 8.4.2.1 Normal Case 1: VSENSE ≥ 20 mV, VCM ≥ VS
        2. 8.4.2.2 Normal Case 2: VSENSE ≥ 20 mV, VCM < VS
        3. 8.4.2.3 Low VSENSE Case 1: VSENSE < 20 mV, –16 V ≤ VCM < 0; and Low VSENSE Case 3: VSENSE < 20 mV, VS < VCM ≤ 80 V
        4. 8.4.2.4 Low VSENSE Case 2: VSENSE < 20 mV, 0 V ≤ VCM ≤ VS
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
    1. 10.1 Shutdown
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 RFI and EMI
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Related Links
    3. 12.3 Community Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Electrical Characteristics

At TA = +25°C, VS = +5 V, VCM = +12 V, VSENSE = 100 mV, and PRE OUT connected to BUF IN, unless otherwise noted.
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
INPUT
VSENSE Full-scale input voltage VSENSE = (VIN+) – (VIN–) 0.15 (VS  – 0.2) / Gain V
VCM Common-mode input range TA = –40°C to +125°C –16 +80 V
CMRR Common-mode rejection ratio VIN+ = –16 V to +80 V 80 120 dB
CMRR over temperature VIN+ = +12 V to +80 V, TA = –40°C to +125°C 100 120 dB
VOS Offset voltage, RTI(1) ±0.5 2.5 mV
VOS over temperature TA = –40°C to +125°C ±3 mV
dVOS/dT VOS vs temperature TA = –40°C to +125°C 2.5 20 μV/°C
PSR VOS vs power-supply VS = +2.7 V to +18 V, VCM = +18 V,
TA = –40°C to +125°C
5 100 μV/V
IB Input bias current, VIN– pin TA = –40°C to +125°C ±8 ±16 μA
PRE OUT output impedance(2) 96
Buffer input bias current –50 nA
Buffer input bias current temperature coefficient ±0.03 nA/°C
OUTPUT (VSENSE ≥ 20mV)(3)
G Gain INA270 total gain 14 V/V
INA271 total gain 20 V/V
GBUF Output buffer gain 2 V/V
Total gain error VSENSE = 20 mV to 100 mV ±0.2% ±1%
Total gain error Over temperature TA = –40°C to +125°C ±2%
Total gain error vs temperature TA = –40°C to +125°C 50 ppm/°C
Total output error(4) ±0.75% ±2.2%
Total output error TA = –40°C to +125°C ±1.0% ±3.0%
Nonlinearity error VSENSE = 20 mV to 100 mV ±0.002%
RO Output impedance, pin 5 1.5 Ω
Maximum capacitive load No sustained oscillation 10 nF
VOLTAGE OUTPUT(5) (RL = 10 kΩ to GND)
Swing to V+ power-supply rail TA = –40°C to +125°C (V+) – 0.05 (V+) – 0.2 V
Swing to GND(6) TA = –40°C to +125°C VGND + 0.003 VGND + 0.05 V
FREQUENCY RESPONSE
BW Bandwidth CLOAD = 5 pF 130 kHz
Phase margin CLOAD < 10 nF 40 Degrees
SR Slew rate 1 V/μs
tS Settling time (1%) VSENSE = 10 mV to 100 mVPP,
CLOAD = 5 pF
2 μs
NOISE, RTI(1)
en Voltage noise density 40 nV/√Hz
POWER SUPPLY
VS Operating range TA = –40°C to +125°C +2.7 +18 V
IQ Quiescent current VOUT = 2 V 700 900 μA
IQ over temperature VSENSE = 0 mV, TA = –40°C to +125°C 350 950 μA
TEMPERATURE RANGE
Specified temperature range –40 +125 °C
Operating temperature range –55 +150 °C
θJA Thermal resistance, SO-8 150 °C/W
RTI means Referred-to-Input.
Initial resistor variation is ±30% with an additional –2200-ppm/°C temperature coefficient.
For output behavior when VSENSE < 20 mV, see the Accuracy Variations as a Result of VSENSE and Common-Mode Voltage section.
Total output error includes effects of gain error and VOS.
See typical characteristic curve Output Swing vs Output Current and the Accuracy Variations as a Result of VSENSE and Common-Mode Voltage section.
Ensured by design; not production tested.