SBOS945B November   2020  – April 2021 INA849

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Adjustable Gain Setting
      2. 8.3.2 Gain Drift
      3. 8.3.3 Wide Input Common-Mode Range
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Reference Pin
      2. 9.1.2 Input Bias Current Return Path
      3. 9.1.3 Thermal Effects due to Power Dissipation
    2. 9.2 Typical Application
      1. 9.2.1 Sensor Conditioning Circuit
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
      2. 9.2.2 Phantom Power in Microphone Preamplifier Circuit
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Support Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

9.1.3 Thermal Effects due to Power Dissipation

The INA849 dissipates approximately 200 mW of power under quiescent conditions at a ±15-V supply voltage. The internal resistor network and output load drive causes an additional power dissipation that depends on the input signal. The small silicon area of the INA849 causes the internal circuitry to experience temperature gradients that might adversely affect the electrical performance.

Precision parameters, such as offset voltage, linearity, common-mode rejection ratio, and total harmonic distortion, can be impacted as a result of these thermal effects in the silicon. The thermal gradient particularly affects the performance of low-frequency input signals with higher gains (> 10) and large output voltage variation. As shown in the measurement Figure 9-5, the thermal effect can be minimized by lowering the supply voltage, if the application permits.

GUID-20201209-CA0I-MTMQ-1MNC-KQSD1X37FZBC-low.svg Figure 9-5 Linearity vs Supply Voltage for G = 1000