SLLSEQ0C august 2015 – may 2023 ISO5852S
PRODUCTION DATA
The ISO5852S device has both, inverting and noninverting gate-control inputs, an active-low reset input, and an open-drain fault output suitable for wired-OR applications. The recommended application circuit in Figure 10-2 shows a typical gate-driver implementation with unipolar output supply. Figure 10-3 shows a typical gate-driver implementation with bipolar output supply using the ISO5852S device.
A 0.1-μF bypass capacitor, recommended at the input supply pin VCC1, and 1-μF bypass capacitor, recommended at the VCC2 output supply pin, provide the large transient currents required during a switching transition to ensure reliable operation. The 220-pF blanking capacitor disables DESAT detection during the off-to-on transition of the power device. The DESAT diode (DDST) and the 1-kΩ series resistor on the DESAT pin are external protection components. The RG gate resistor limits the gate-charge current and indirectly controls the rise and fall times of the IGBT collector voltage. The open-drain
FLT output and RDY output have a passive
10-kΩ pullup resistor. In this application, the IGBT gate driver is disabled when a fault is detected and does not resume switching until the microcontroller applies a reset signal.