SLLSEI6G September 2014 – January 2017 ISO7340C , ISO7340FC , ISO7341C , ISO7341FC , ISO7342C , ISO7342FC
PRODUCTION DATA.
Refer to the PDF data sheet for device specific package drawings
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
VCC | Supply voltage(2) | VCC1, VCC2 | –0.5 | 6 | V |
Voltage | INx, OUTx, ENx | –0.5 | VCC + 0.5(3) | V | |
IO | Output current | ±15 | mA | ||
TJ | Maximum junction temperature | 150 | °C | ||
Tstg | Storage temperature | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±4000 | V |
Charged device model (CDM), per JEDEC specification JESD22-C101(2) | ±1500 | V |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
VCC1, VCC2 | Supply voltage | 3 | 5.5 | V | |
IOH | High-level output current | –4 | mA | ||
IOL | Low-level output current | 4 | mA | ||
VIH | High-level input voltage | 2 | 5.5 | V | |
VIL | Low-level input voltage | 0 | 0.8 | V | |
tui | Input pulse duration | 40 | ns | ||
1 / tui | Signaling rate | 0 | 25 | Mbps | |
TJ | Junction temperature(1) | 136 | °C | ||
TA | Ambient temperature | –40 | 25 | 125 | °C |
THERMAL METRIC(1) | ISO734x | UNIT | ||
---|---|---|---|---|
DW (SOIC) | ||||
16 PINS | ||||
RθJA | Junction-to-ambient thermal resistance | 78.4 | °C/W | |
RθJC(top) | Junction-to-case(top) thermal resistance | 41 | °C/W | |
RθJB | Junction-to-board thermal resistance | 43 | °C/W | |
ψJT | Junction-to-top characterization parameter | 15.6 | °C/W | |
ψJB | Junction-to-board characterization parameter | 42.5 | °C/W | |
RθJC(bottom) | Junction-to-case(bottom) thermal resistance | n/a | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
PD | Maximum power dissipation by both sides of ISO7340x | 92 | mW | |||
PD1 | Maximum power dissipation by side-1 of ISO7340x | 24 | ||||
PD2 | Maximum power dissipation by side-2 of ISO7340x | 68 | ||||
PD | Maximum power dissipation by both sides of ISO7341x | 102 | mW | |||
PD1 | Maximum power dissipation by side-1 of ISO7341x | 42 | ||||
PD2 | Maximum power dissipation by side-2 of ISO7341x | 60 | ||||
PD | Maximum power dissipation by both sides of ISO7342x | 111 | mW | |||
PD1 | Maximum power dissipation by side-1 of ISO7342x | 55.5 | ||||
PD2 | Maximum power dissipation by side-2 of ISO7342x | 55.5 |
PARAMETER | TEST CONDITIONS | VALUE | UNIT | |
---|---|---|---|---|
GENERAL | ||||
CLR | External clearance(1) | Shortest terminal-to-terminal distance through air | >8 | mm |
CPG | External creepage(1) | Shortest terminal-to-terminal distance across the package surface | >8 | mm |
DTI | Distance through the insulation | Minimum internal gap (internal clearance) | >13 | µm |
CTI | Comparative tracking index | DIN EN 60112 (VDE 0303-11); IEC 60112 | >400 | V |
Material group | II | |||
Overvoltage Category | Rated mains voltage ≤ 300 VRMS | I–IV | ||
Rated mains voltage ≤ 600 VRMS | I–III | |||
Rated mains voltage ≤ 1000 VRMS | I-II | |||
DIN V VDE V 0884-10 (VDE V 0884-10):2006-12(2) | ||||
VIORM | Maximum repetitive peak isolation voltage | AC voltage (bipolar) | 1414 | VPK |
VIOTM | Maximum transient isolation voltage | VTEST = VIOTM; t = 60 s (qualification); t = 1 s (100% production) |
4242 | VPK |
VIOSM | Maximum surge isolation voltage(3) | Test method per IEC 60065, 1.2/50 µs waveform, VTEST = 1.3 × VIOSM = 7800 VPK (qualification) |
6000 | VPK |
qpd | Apparent charge(4) | Method a: After I/O safety test subgroup 2/3, Vini = VIOTM, tini = 60 s; Vpd(m) = 1.2 × VIORM = 1697 VPK, tm = 10 s |
≤5 | pC |
Method a: After environmental tests subgroup 1, Vini = VIOTM, tini = 60 s; Vpd(m) = 1.6 × VIORM = 2262 VPK, tm = 10 s |
≤5 | |||
Method b1: At routine test (100% production) and preconditioning (type test) Vini = VIOTM, tini = 1 s; Vpd(m) = 1.875 × VIORM = 2651 VPK, tm = 1 s (100% production) |
≤5 | |||
CIO | Barrier capacitance, input to output(5) | VIO = 0.4 sin (2πft), f = 1 MHz | 2.4 | pF |
RIO | Isolation resistance, input to output(5) | VIO = 500 V, TA = 25°C | >1012 | Ω |
VIO = 500 V, 100°C ≤ TA ≤ x°C | >1011 | |||
VIO = 500 V at TS = 150°C | >109 | |||
Pollution degree | 2 | |||
Climatic category | 40/125/21 | |||
UL 1577 | ||||
VISO | Withstand isolation voltage | VTEST = VISO = 3000 VRMS, t = 60 s (qualification); VTEST = 1.2 × VISO = 3600 VRMS, t = 1 s (100% production) | 3000 | VRMS |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
IS | Safety input, output, or supply current | RθJA = 78.4 °C/W, VI = 5.5 V, TJ = 150°C, TA = 25°C, see Figure 1 | 290 | mA | ||
RθJA = 78.4 °C/W, VI = 3.6 V, TJ = 150°C, TA = 25°C, see Figure 1 | 443 | |||||
TS | Safety temperature | 150 |
The safety-limiting constraint is the maximum junction temperature specified in the data sheet. The power dissipation and junction-to-air thermal impedance of the device installed in the application hardware determines the junction temperature. The assumed junction-to-air thermal resistance in the Thermal Information table is that of a device installed on a high-K test board for leaded surface-mount packages. The power is the recommended maximum input voltage times the current. The junction temperature is then the ambient temperature plus the power times the junction-to-air thermal resistance.
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
VOH | High-level output voltage | IOH = –4 mA; see Figure 14 | VCCO(1) – 0.5 | 4.7 | V | |
IOH = –20 μA; see Figure 14 | VCCO(1) – 0.1 | 5 | ||||
VOL | Low-level output voltage | IOL = 4 mA; see Figure 14 | 0.2 | 0.4 | V | |
IOL = 20 μA; see Figure 14 | 0 | 0.1 | ||||
VI(HYS) | Input threshold voltage hysteresis | 480 | mV | |||
IIH | High-level input current | VIH = VCC at INx or ENx | 10 | μA | ||
IIL | Low-level input current | VIL = 0 V at INx or ENx | –10 | μA | ||
CMTI | Common-mode transient immunity | VI = VCC or 0 V; see Figure 17 | 25 | 70 | kV/μs | |
CI | Input capacitance(2) | VI = VCC/2 + 0.4 sin (2πft), f = 1 MHz, VCC = 5 V | 3.4 | pF |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
VOH | High-level output voltage | IOH = –4 mA; see Figure 14 | VCCO(1) – 0.5 | 3 | V | |
IOH = –20 μA; see Figure 14 | VCCO(1) – 0.1 | 3.3 | ||||
VOL | Low-level output voltage | IOL = 4 mA; see Figure 14 | 0.2 | 0.4 | V | |
IOL = 20 μA; see Figure 14 | 0 | 0.1 | ||||
VI(HYS) | Input threshold voltage hysteresis | 450 | mV | |||
IIH | High-level input current | VIH = VCC at INx or ENx | 10 | μA | ||
IIL | Low-level input current | VIL = 0 V at INx or ENx | –10 | μA | ||
CMTI | Common-mode transient immunity | VI = VCC or 0 V; see Figure 17 | 25 | 50 | kV/μs |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
tPLH, tPHL | Propagation delay time | See Figure 14 | 20 | 31 | 58 | ns | |
PWD(1) | Pulse width distortion |tPHL – tPLH| | 4 | ns | ||||
tsk(o)(2) | Channel-to-channel output skew time | Same-direction Channels | 2.5 | ns | |||
Opposite-direction Channels | 17 | ns | |||||
tsk(pp)(3) | Part-to-part skew time | 23 | ns | ||||
tr | Output signal rise time | See Figure 14 | 2.1 | ns | |||
tf | Output signal fall time | 1.7 | ns | ||||
tPHZ | Disable propagation delay, high-to-high impedance output | See Figure 15 | 7 | 13 | ns | ||
tPLZ | Disable propagation delay, low-to-high impedance output | 7 | 13 | ns | |||
tPZH | Enable propagation delay, high impedance-to-high output | ISO734xC | 7 | 13 | ns | ||
ISO734xFC | 15000 | 23000(4) | |||||
tPZL | Enable propagation delay, high impedance-to-low output | ISO734xC | 15000 | 23000(4) | ns | ||
ISO734xFC | 7 | 13 | |||||
tfs | Fail-safe output delay time from input power loss | See Figure 16 | 9.4 | μs |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
tPLH, tPHL | Propagation delay time | See Figure 14 | 22 | 35 | 66 | ns | |
PWD(1) | Pulse width distortion |tPHL – tPLH| | 2.5 | |||||
tsk(o) (2) | Channel-to-channel output skew time | Same-direction Channels | 3 | ||||
Opposite-direction Channels | 16 | ||||||
tsk(pp) (3) | Part-to-part skew time | 28 | |||||
tr | Output signal rise time | See Figure 14 | 2.8 | ns | |||
tf | Output signal fall time | 2.1 | |||||
tPHZ | Disable propagation delay, high-to-high impedance output | See Figure 15 | 9 | 18 | ns | ||
tPLZ | Disable propagation delay, low-to-high impedance output | 9 | 18 | ||||
tPZH | Enable propagation delay, high impedance-to-high output | ISO734xC | 9 | 18 | |||
ISO734xFC | 16000 | 24000(4) | |||||
tPZL | Enable propagation delay, high impedance-to-low output | ISO734xC | 16000 | 24000(4) | |||
ISO734xFC | 9 | 18 | |||||
tfs | Fail-safe output delay time from input power loss | See Figure 16 | 9.4 | μs |