SNVSCB0C January   2023  – September 2023 LM2105

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Timing Diagrams
    8. 6.8 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Start-Up and UVLO
      2. 7.3.2 Input Stages
      3. 7.3.3 Level Shift
      4. 7.3.4 Output Stages
      5. 7.3.5 SH Transient Voltages Below Ground
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Select Bootstrap and GVDD Capacitor
        2. 8.2.2.2 Select External Gate Driver Resistor
        3. 8.2.2.3 Estimate the Driver Power Loss
      3. 8.2.3 Application Curves
  10. 9 Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Support Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.1 Overview

The LM2105 is a high-voltage gate driver designed to drive both the high-side and the low-side N-channel FETs in a synchronous buck or a half-bridge configuration. The two outputs are independently controlled with two TTL-compatible input signals. The device can also work with CMOS type control signals at its inputs as long as the signals meet the turn-on and turn-off threshold specifications of the LM2105. The floating high-side driver is capable of working with a recommended BST voltage up to 105 V. A bootstrap diode is integrated in the LM2105 device to charge the high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout (UVLO) is provided on both the low-side and the high-side power rails.