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LM2105

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107-V 0.5-A/0.8-A half-bridge gate driver with 5-V UVLO and integrated bootstrap diode

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Data sheet

LM2105

ACTIVE
Data sheet Order now

Product details

Bootstrap supply voltage (max) (V) 107 Power switch IGBT, MOSFET Input supply voltage (min) (V) 5 Input supply voltage (max) (V) 18 Peak output current (A) 0.65 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 5 Rating Catalog Propagation delay time (µs) 0.125 Rise time (ns) 28 Fall time (ns) 18 Iq (mA) 0.0333 Input threshold CMOS, TTL Channel input logic Noninverting Switch node voltage (V) -1 Features Integrated bootstrap diode Driver configuration Dual inputs
Bootstrap supply voltage (max) (V) 107 Power switch IGBT, MOSFET Input supply voltage (min) (V) 5 Input supply voltage (max) (V) 18 Peak output current (A) 0.65 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 5 Rating Catalog Propagation delay time (µs) 0.125 Rise time (ns) 28 Fall time (ns) 18 Iq (mA) 0.0333 Input threshold CMOS, TTL Channel input logic Noninverting Switch node voltage (V) -1 Features Integrated bootstrap diode Driver configuration Dual inputs
SOIC (D) 8 29.4 mm² 4.9 x 6 WSON (DSG) 8 4 mm² 2 x 2
  • Drives two N-channel MOSFETs in half-bridge configuration
  • Integrated bootstrap diode
  • 5-V typical undervoltage lockout on GVDD
  • 107-V absolute maximum voltage on BST
  • –19.5-V absolute maximum negative transient voltage handling on SH
  • 0.5-A/0.8-A peak source/sink currents
  • 115-ns typical propagation delay
  • Drives two N-channel MOSFETs in half-bridge configuration
  • Integrated bootstrap diode
  • 5-V typical undervoltage lockout on GVDD
  • 107-V absolute maximum voltage on BST
  • –19.5-V absolute maximum negative transient voltage handling on SH
  • 0.5-A/0.8-A peak source/sink currents
  • 115-ns typical propagation delay

The LM2105 is a compact, high-voltage gate driver designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The integrated bootstrap diode saves board space and reduces system cost by eliminating the need for an external discrete diode.

The –1-V DC and –19.5-V transient negative voltage handling on the SH pin improve the system robustness in high noise applications. The small, thermally-enhanced 8-pin WSON package improves PCB layout by allowing the driver to be placed closer to the motor phases. The LM2105 is also available in an 8-pin SOIC package compatible with industry standard pinouts. Undervoltage lockout (UVLO) is provided on both the low-side and the high-side power rails for protection during power up and power down.

The LM2105 is a compact, high-voltage gate driver designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The integrated bootstrap diode saves board space and reduces system cost by eliminating the need for an external discrete diode.

The –1-V DC and –19.5-V transient negative voltage handling on the SH pin improve the system robustness in high noise applications. The small, thermally-enhanced 8-pin WSON package improves PCB layout by allowing the driver to be placed closer to the motor phases. The LM2105 is also available in an 8-pin SOIC package compatible with industry standard pinouts. Undervoltage lockout (UVLO) is provided on both the low-side and the high-side power rails for protection during power up and power down.
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* Data sheet LM2105 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode datasheet (Rev. C) PDF | HTML 09 Sep 2023
Application note How to Choose a Gate Driver for DC Motor Drives PDF | HTML 05 Oct 2023
EVM User's guide LM2105EVM User's Guide PDF | HTML 14 Feb 2023
Certificate LM2105EVM EU RoHS Declaration of Conformity (DoC) 01 Feb 2023

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Evaluation board

LM2105EVM — LM2105 evaluation module for 105-V half-bridge driver with integrated bootstrap diode

The LM2105 evaluation module (EVM) is a platform for evaluating LM2105 performance. LM2105 is a 105-V, boot-voltage, high-side, low-side driver with 0.5-A peak source and 0.8-A sink current for driving two N-channel metal–oxide–semiconductor field-effect transistors (MOSFETs). The same (...)

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