SNVS334F January   2005  – January 2016 LM2734Z , LM2734Z-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Theory of Operation
      2. 7.3.2 Boost Function
      3. 7.3.3 Soft-Start
      4. 7.3.4 Output Overvoltage Protection
      5. 7.3.5 Undervoltage Lockout
      6. 7.3.6 Current Limit
    4. 7.4 Device Functional Modes
      1. 7.4.1 Enable Pin and Shutdown Mode
      2. 7.4.2 Thermal Shutdown
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 LM2734Z Design Example 1
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1  Inductor Selection
          2. 8.2.1.2.2  Input Capacitor
          3. 8.2.1.2.3  Output Capacitor
          4. 8.2.1.2.4  Catch Diode
          5. 8.2.1.2.5  Boost Diode
          6. 8.2.1.2.6  Boost Capacitor
          7. 8.2.1.2.7  Output Voltage
          8. 8.2.1.2.8  Calculating Efficiency, and Junction Temperature
          9. 8.2.1.2.9  Calculating the LM2734Z Junction Temperature
          10. 8.2.1.2.10 WSON Package
          11. 8.2.1.2.11 Package Selection
        3. 8.2.1.3 Application Curve
      2. 8.2.2 LM2734Z Design Example 2
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
      3. 8.2.3 LM2734Z Design Example 3
        1. 8.2.3.1 Design Requirements
        2. 8.2.3.2 Detailed Design Procedure
      4. 8.2.4 LM2734Z Design Example 4
        1. 8.2.4.1 Design Requirements
        2. 8.2.4.2 Detailed Design Procedure
      5. 8.2.5 LM2734Z Design Example 5
        1. 8.2.5.1 Design Requirements
        2. 8.2.5.2 Detailed Design Procedure
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Examples
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

See (1)(2)
MIN MAX UNIT
VIN Input voltage –0.5 24 V
SW voltage –0.5 24 V
Boost voltage –0.5 30 V
Boost to SW voltage –0.5 6 V
FB voltage –0.5 3 V
EN voltage –0.5 VIN + 0.3 V
TJ Junction temperature 150 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and specifications.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1)(2) ±2000 V
Charged-device model (CDM), per AEC Q100-002 ±1000
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
(2) Human-body model, 1.5 kΩ in series with 100 pF.

6.3 Recommended Operating Conditions

MIN MAX UNIT
VIN Input voltage 3 20 V
SW voltage –0.5 20 V
Boost voltage –0.5 25 V
Boost to SW voltage 1.6 5.5 V
TJ Junction temperature –40 125 °C

6.4 Thermal Information

THERMAL METRIC(1) LM2734Z UNIT
DDC (SOT) NGG (WSON)
6 PINS 6 PINS
RθJA Junction-to-ambient thermal resistance(2) 180.3 56.2 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 51.6 52.6 °C/W
RθJB Junction-to-board thermal resistance 27.7 30.7 °C/W
ψJT Junction-to-top characterization parameter 1.2 0.9 °C/W
ψJB Junction-to-board characterization parameter 27.3 30.8 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance — 10.7 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report (SPRA953).
(2) Thermal shutdown occurs if the junction temperature exceeds 165°C. The maximum power dissipation is a function of TJ(MAX), RθJA and TA . The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) – TA)/RθJA . All numbers apply for packages soldered directly onto a 3-in × 3-in printed-circuit-board with 2-oz. copper on 4 layers in still air. For a 2-layer board using 1-oz. copper in still air, RθJA = 204°C/W.

6.5 Electrical Characteristics

All typical specifications are for TJ = 25°C, and all maximum and minimum limits apply over the full operating temperature range (TJ = –40°C to 125°C). VIN = 5 V, VBOOST – VSW = 5 V (unless otherwise noted). Data sheet minimum and maximum specification limits are specified by design, test, or statistical analysis.
PARAMETER TEST CONDITIONS MIN(1) TYP(2) MAX(1) UNIT
VFB Feedback voltage 0.784 0.8 0.816 V
ΔVFB/ΔVIN Feedback voltage line regulation VIN = 3 V to 20 V 0.01 % / V
IFB Feedback input bias current Sink and source 10 250 nA
UVLO Undervoltage lockout VIN Rising 2.74 2.90 V
Undervoltage lockout VIN Falling 2 2.3
UVLO hysteresis 0.30 0.44 0.62
FSW Switching frequency 2.2 3.0 3.6 MHz
DMAX Maximum duty cycle 78% 85%
DMIN Minimum duty Cycle 8%
RDS(ON) Switch ON resistance VBOOST - VSW = 3 V
(SOT Package)		 300 600 mΩ
VBOOST - VSW = 3 V
(WSON Package)		 340 650 mΩ
ICL Switch current limit VBOOST - VSW = 3 V 1.2 1.7 2.5 A
IQ Quiescent current Switching 1.5 2.5 mA
Quiescent current (shutdown) VEN = 0 V 30 nA
IBOOST Boost pin current (Switching) 4.25 6 mA
VEN_TH Shutdown threshold voltage VEN Falling 0.4 V
Enable threshold voltage VEN Rising 1.8
IEN Enable pin current Sink/source 10 nA
ISW Switch leakage 40 nA
(1) Specified to Texas Instruments' Average Outgoing Quality Level (AOQL).
(2) Typicals represent the most likely parametric norm.

6.6 Typical Characteristics

at VIN = 5 V, VBOOST - VSW = 5 V, L1 = 2.2 µH and TA = 25°C (unless otherwise noted)
LM2734Z LM2734Z-Q1 20130336.png
VOUT = 5 V
Figure 1. Efficiency vs Load Current
LM2734Z LM2734Z-Q1 20130337.png
VOUT = 1.5 V
Figure 3. Efficiency vs Load Current
LM2734Z LM2734Z-Q1 20130354.png
VOUT = 1.5 V IOUT = 500 mA
Figure 5. Line Regulation
LM2734Z LM2734Z-Q1 20130351.png
VOUT = 3.3 V
Figure 2. Efficiency vs Load Current
LM2734Z LM2734Z-Q1 20130327.png
Figure 4. Oscillator Frequency vs Temperature
LM2734Z LM2734Z-Q1 20130355.png
VOUT = 3.3 V IOUT = 500 mA
Figure 6. Line Regulation