SNVS053F June   2000  – September 2016 LM4140

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 ON/OFF Operation
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Input Capacitors
      2. 8.1.2 Output Capacitors
      3. 8.1.3 Tantalum Capacitors
      4. 8.1.4 Aluminum Electrolytic Capacitors
      5. 8.1.5 Multilayer Ceramic Capacitors
      6. 8.1.6 Reverse Current Path
      7. 8.1.7 Output Accuracy
    2. 8.2 Typical Applications
      1. 8.2.1 Precision DAC Reference
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Boosted Output Current
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
      3. 8.2.3 Boosted Output Current With Current Limiter
        1. 8.2.3.1 Design Requirements
        2. 8.2.3.2 Detailed Design Procedure
      4. 8.2.4 Complimentary Outputs
        1. 8.2.4.1 Design Requirements
        2. 8.2.4.2 Detailed Design Procedure
      5. 8.2.5 Voltage Reference With Force and Sense Output
        1. 8.2.5.1 Design Requirements
        2. 8.2.5.2 Detailed Design Procedure
      6. 8.2.6 Precision Programmable Current Source
        1. 8.2.6.1 Design Requirements
        2. 8.2.6.2 Detailed Design Procedure
      7. 8.2.7 Strain Gauge Conditioner for 350-Ω Bridge
        1. 8.2.7.1 Design Requirements
        2. 8.2.7.2 Detailed Design Procedure
      8. 8.2.8 Bipolar Voltage References for Low Power ADC
        1. 8.2.8.1 Design Requirements
        2. 8.2.8.2 Detailed Design Procedure
      9. 8.2.9 Self-Biased Low Power ADC Reference With Trim Current Sources
        1. 8.2.9.1 Design Requirements
        2. 8.2.9.2 Detailed Design Procedure
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Receiving Notification of Documentation Updates
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

11 Device and Documentation Support

11.1 Receiving Notification of Documentation Updates

To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document.

11.2 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.

    TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
    Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.

11.3 Trademarks

E2E is a trademark of Texas Instruments.

All other trademarks are the property of their respective owners.

11.4 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

11.5 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.