SNVS424 Data sheet

SNVS424D January 2006 – December 2014 LM5106

PRODUCTION DATA.

Package Options

Mechanical Data (Package|Pins)

DGS|10
- MPDS035C
DPR|10
- MPSS046B

Thermal pad, mechanical data (Package|Pins)

Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings⁽¹⁾⁽¹⁾

	MIN	MAX	UNIT
V_DD to V_SS	–0.3	18	V
HB to HS	–0.3	18	V
IN and EN to V_SS	–0.3	V_DD + 0.3	V
LO to V_SS	–0.3	V_DD + 0.3	V
HO to V_SS	HS – 0.3	HB + 0.3	V
HS to V_SS⁽⁵⁾		100	V
HB to V_SS		118	V
RDT to V_SS	–0.3	5	V
Junction Temperature		150	°C
Storage temperature range, T_stg	–55	150	°C

(1) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and specifications.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±1500	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

	MIN	MAX	UNIT
V_DD	8	14	V
HS⁽⁵⁾	–1	100	V
HB	HS + 8	HS + 14	V
HS Slew Rate		< 50	V/ns
Junction Temperature	–40	125	°C

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		LM5102		UNIT
		DGS	DPR⁽²⁾
		10 PINS	10 PINS
R_θJA	Junction-to-ambient thermal resistance	165.3	37.9	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	58.9	38.1
R_θJB	Junction-to-board thermal resistance	54.4	14.9
ψ_JT	Junction-to-top characterization parameter	6.2	0.4
ψ_JB	Junction-to-board characterization parameter	83.6	15.2
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	N/A	4.4

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report (SPRA953).

(2) Four-layer board with Cu finished thickness 1.5 oz, 1 oz, 1 oz, 1.5 oz. Maximum die size used. 5x body length of Cu trace on PCB top. 50-mm × 50-mm ground and power planes embedded in PCB. See Application Note AN-1187 Leadless Leadframe Package (LLP) (SNOA401).

6.5 Electrical Characteristics

MIN and MAX limits apply over the full operating junction temperature range. Unless otherwise specified, T_J = +25°C, V_DD = HB = 12 V, V_SS = HS = 0 V, EN = 5 V. No load on LO or HO. RDT= 100kΩ⁽³⁾.

SYMBOL	PARAMETER	TEST CONDITIONS	MIN	TYP	MAX	UNIT
SUPPLY CURRENTS
I_DD	V_DD Quiescent Current	IN = EN = 0 V		0.34	0.6	mA
I_DDO	V_DD Operating Current	f = 500 kHz		2.1	3.5	mA
I_HB	Total HB Quiescent Current	IN = EN = 0 V		0.06	0.2	mA
I_HBO	Total HB Operating Current	f = 500 kHz		1.5	3	mA
I_HBS	HB to V_SS Current, Quiescent	HS = HB = 100 V		0.1	10	µA
I_HBSO	HB to V_SS Current, Operating	f = 500 kHz		0.5		mA
INPUT IN and EN
V_IL	Low Level Input Voltage Threshold		0.8	1.8		V
V_IH	High Level Input Voltage Threshold			1.8	2.2	V
R_pd	Input Pulldown Resistance Pin IN and EN		100	200	500	kΩ
DEAD-TIME CONTROLS
VRDT	Nominal Voltage at RDT		2.7	3	3.3	V
IRDT	RDT Pin Current Limit	RDT = 0 V	0.75	1.5	2.25	mA
UNDERVOLTAGE PROTECTION
V_DDR	V_DD Rising Threshold		6.2	6.9	7.6	V
V_DDH	V_DD Threshold Hysteresis			0.5		V
V_HBR	HB Rising Threshold		5.9	6.6	7.3	V
V_HBH	HB Threshold Hysteresis			0.4		V
LO GATE DRIVER
V_OLL	Low-Level Output Voltage	I_LO = 100 mA		0.21	0.4	V
V_OHL	High-Level Output Voltage	I_LO = –100 mA, V_OHL = V_DD – V_LO		0.5	0.85	V
I_OHL	Peak Pullup Current	LO = 0 V		1.2		A
I_OLL	Peak Pulldown Current	LO = 12 V		1.8		A
HO GATE DRIVER
V_OLH	Low-Level Output Voltage	I_HO = 100 mA		0.21	0.4	V
V_OHH	High-Level Output Voltage	I_HO = –100 mA, V_OHH = HB – HO		0.5	0.85	V
I_OHH	Peak Pullup Current	HO = 0 V		1.2		A
I_OLH	Peak Pulldown Current	HO = 12 V		1.8		A
THERMAL RESISTANCE
θ_JA	Junction to Ambient	See⁽²⁾⁽⁴⁾		40		°C/W

6.6 Switching Characteristics

MIN and MAX limits apply over the full operating junction temperature range. Unless otherwise specified, T_J = +25°C, V_DD = HB = 12 V, V_SS = HS = 0 V, No Load on LO or HO⁽³⁾.

SYMBOL	PARAMETER	TEST CONDITIONS	MIN	TYP	MAX	UNIT
t_LPHL	Lower Turn-Off Propagation Delay			32	56	ns
t_HPHL	Upper Turn-Off Propagation Delay			32	56
t_LPLH	Lower Turn-On Propagation Delay	RDT = 100k	400	520	640
t_HPLH	Upper Turn-On Propagation Delay	RDT = 100k	450	570	690
t_LPLH	Lower Turn-On Propagation Delay	RDT = 10k	85	115	160
t_HPLH	Upper Turn-On Propagation Delay	RDT = 10k	85	115	160
t_en, t_sd	Enable and Shutdown propagation delay			36
DT1, DT2	Dead-time LO OFF to HO ON & HO OFF to LO ON	RDT = 100k		510
DT1, DT2	Dead-time LO OFF to HO ON & HO OFF to LO ON	RDT = 10k		86
MDT	Dead-time matching	RDT = 100k		50
t_R	Either Output Rise Time	C_L = 1000pF		15
t_F	Either Output Fall Time	C_L = 1000pF		10

(1) Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Recommended Operating Conditions are conditions under which operation of the device is ensured. Operating Ratings do not imply ensured performance limits. For ensured performance limits and associated test conditions, see the Electrical Characteristics.

(2) Four-layer board with Cu finished thickness 1.5/1.0/1.0/1.5 oz. Maximum die size used. 5x body length of Cu trace on PCB top. 50-mm × 50-mm ground and power planes embedded in PCB. See AN-1187 Leadless Leadframe Package (LLP), SNOA401.

(3) Min and Max limits are 100% production tested at 25°C. Limits over the operating temperature range are ensured through correlation using Statistical Quality Control (SQC) methods. Limits are used to calculate Average Outgoing Quality Level (AOQL).

(4) The θ_JA is not a constant for the package and depends on the printed circuit board design and the operating conditions.

(5) In the application the HS node is clamped by the body diode of the external lower N-MOSFET, therefore the HS voltage will generally not exceed –1 V. However in some applications, board resistance and inductance may result in the HS node exceeding this stated voltage transiently. If negative transients occur on HS, the HS voltage must never be more negative than V_DD - 15 V. For example, if V_DD = 10 V, the negative transients at HS must not exceed –5 V.