SNVS725I June   2011  – October 2019 LM5113

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Application Diagram
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Input and Output
      2. 7.3.2 Start-Up and UVLO
      3. 7.3.3 HS Negative Voltage and Bootstrap Supply Voltage Clamping
      4. 7.3.4 Level Shift
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 VDD Bypass Capacitor
        2. 8.2.2.2 Bootstrap Capacitor
        3. 8.2.2.3 Power Dissipation
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Examples
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Support Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

4 Revision History

Changes from H Revision (January 2018) to I Revision

  • Removed "NRND" from data sheet titleGo
  • Removed NRND disclosure statement Go

Changes from G Revision (January 2016) to H Revision

  • Changed data sheet title from: LM5113 100 V 1.2-A / 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs to: LM5113 80-V, 1.2-A, 5-A, Half Bridge GaN DriverGo
  • Added Not Recommended for New Designs statement to the data sheetGo
  • Added content to the Description section Go
  • Changed the first page key graphic Go
  • Removed HB to VDD parameter from the Absolute Maximum Ratings tableGo
  • Changed the HS to VSS maximum from: 100 V to: 93 VGo
  • Changed the HB to VSS maximum from: 107 V to: V(HS) + 7 VGo
  • Changed the human-body model value from: ±2000 to: ±1000Go
  • Changed HS maximum from: 100 V to: 90 V Go
  • Changed the Functional Block DiagramGo
  • Changed the last paragraph and add new images to the Input and Output section Go
  • Added content to the Start-up and UVLO section Go

Changes from F Revision (April 2013) to G Revision

  • Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information sectionGo

Changes from E Revision (April 2013) to F Revision

  • Changed layout of National Data Sheet to TI formatGo